sot-23 Marking k7k
Abstract: 2N7002K k7k sot-23 2N7002K-7 2N7002K K7K
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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Original
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2N7002K
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
DS30896
sot-23 Marking k7k
2N7002K
k7k sot-23
2N7002K-7
2N7002K K7K
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PDF
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2N7002KQ-7
Abstract: k7k sot-23 sot-23 Marking k7k 2N7002K-7 2N7002K-2 2N7002K K7K
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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Original
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2N7002K
AEC-Q101
OT-23
J-STD-020
MIL-STD-202,
OT-23
DS30896
2N7002KQ-7
k7k sot-23
sot-23 Marking k7k
2N7002K-7
2N7002K-2
2N7002K K7K
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PDF
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2N7002KQ-13
Abstract: 2N7002KQ-7
Text: 2N7002K Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green" Device Notes 1 and 2 ESD Protected Up To 2kV
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Original
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2N7002K
AEC-Q101
J-STD-020
MIL-STD-202,
DS30896
2N7002KQ-13
2N7002KQ-7
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PDF
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2N7002K
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETs 2N7002K N-channel MOSFET SOT-23 FEATURES z High density cell design for Low RDS（on） z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
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Original
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OT-23
2N7002K
OT-23
500mA
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PDF
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sot-23 Marking k7k
Abstract: k7k sot-23 2N7002K K7K 2N7002K marking code k7k transistor marking code k7k 2N7002K-7 transistor marking 61 transistor 2N7002K DS30896
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 2
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Original
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2N7002K
AEC-Q101
OT-23
J-STD-020C
MIL-STD-202,
DS30896
sot-23 Marking k7k
k7k sot-23
2N7002K K7K
2N7002K
marking code k7k transistor
marking code k7k
2N7002K-7
transistor marking 61
transistor 2N7002K
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PDF
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2n7002k EQUIVALENT
Abstract: k7k transistor DS30896
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • Mechanical Data • • Low On-Resistance Low Input Capacitance Fast Switching Speed
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Original
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2N7002K
AEC-Q101
OT-23
J-STD-020C
MIL-STD-202,
DS30896
2n7002k EQUIVALENT
k7k transistor
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PDF
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2N7002K
Abstract: MosFET
Text: 2N7002K 0.3A , 60V , RDS ON 4 N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-23 RDS(ON), VGS@10V, IDS@500mA=3
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Original
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2N7002K
OT-23
500mA
200mA
2002/95/EC
30-Mar-2011
2N7002K
MosFET
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed
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Original
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2N7002K
380mA
310mA
AEC-Q101
DS30896
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002K 60V ESD Protected N-Channel Enhancement Mode MOSFET RDS ON , VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω SOT-23 FEATURES • • • • • • Advanced Trench Process Technology Ultra Low On Resistance : 2Ω Fast Switching Speed : 20ns
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Original
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2N7002K
500mA
200mA
OT-23
2002/95/EC
OT-23
MIL-STD-750,
200mA
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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2N7002K
380mA
310mA
AEC-Q101
DS30896
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PDF
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MARKING C7K
Abstract: MSOT-23 2n7002k EQUIVALENT
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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2N7002K
380mA
310mA
AEC-Q101
DS30896
MARKING C7K
MSOT-23
2n7002k EQUIVALENT
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PDF
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k7k transistor
Abstract: k7k sot-23 transistor k7k sot-23 Marking k7k 2N7002KA 2N7002K-7 marking K7K marking code k7k transistor
Text: 2N7002K Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · · · · Low On-Resistance: RDS ON SOT-23 Low Gate Threshold Voltage A Low Input Capacitance Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50
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Original
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2N7002K
AEC-Q101
OT-23
DS30896
k7k transistor
k7k sot-23
transistor k7k
sot-23 Marking k7k
2N7002KA
2N7002K-7
marking K7K
marking code k7k transistor
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PDF
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MOSFET N SOT-23
Abstract: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected
Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition
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Original
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2N7002K
500mA
200mA
2002/95/EC
OT-23
MIL-STD-750
008gram
MOSFET N SOT-23
2N7002K
60V N-Channel Enhancement Mode MOSFET - ESD Protected
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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2N7002K
380mA
310mA
AEC-Q101
DS30896
|
PDF
|
|
|
2N7002K
Abstract: No abstract text available
Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition
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Original
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2N7002K
500mA
200mA
2002/95/EC
OT-23
MIL-STD-750
2N7002K
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PDF
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MARKING C7K
Abstract: 2N7002K-7 2n7002k EQUIVALENT
Text: 2N7002K Green N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(ON) max 60V 2Ω @ VGS = 10V 3Ω @ VGS = 5V ID max TA = +25°C 380mA 310mA Description • Low On-Resistance • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage
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Original
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2N7002K
380mA
310mA
AEC-Q101
DS30896
MARKING C7K
2N7002K-7
2n7002k EQUIVALENT
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PDF
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2N7002K R1
Abstract: No abstract text available
Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance
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Original
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2N7002K
500mA
200mA
2011/65/EU
IEC61249
OT-23
OT-23
2010-REV
2N7002K R1
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PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance
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Original
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2N7002K
OT-23
500mA
200mA
2002/95/EC
IEC61249
2010-REV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω 0.006(0.15)MIN. • RDS(ON), VGS@4.5V,IDS@200mA=4Ω 0.120(3.04) 0.110(2.80) • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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Original
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2N7002K
500mA
OT-23
200mA
2010-REV
RB500V-40
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance
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Original
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2N7002K
380mA
310mA
DS30896
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PDF
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2N7002KA
Abstract: No abstract text available
Text: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance
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Original
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2N7002K-AU
500mA
200mA
TS16949
AECQ101
2002/95/EC
IEC61249
OT-23
2010-REV
2N7002KA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7002K 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance
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Original
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2N7002K
500mA
200mA
2002/95/EC
IEC61249
OT-23
OT-23
2010-REV
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2N7002K-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-23 FEATURES Unit：inch mm • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology 0.120(3.04) 0.110(2.80) • High Density Cell Design For Ultra Low On-Resistance
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Original
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2N7002K-AU
OT-23
500mA
200mA
TS16949
AEC-Q101
2002/95/EC
2010-REV
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PDF
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2N7002K-7
Abstract: 2N7002KQ-7 2N7002K1
Text: 2N7002K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 2Ω @ VGS = 10V 380mA 3Ω @ VGS = 5V 310mA • • • • • 60V • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead, Halogen and Antimony Free, RoHS Compliant "Green"
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Original
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2N7002K
380mA
310mA
AEC-Q101
DS30896
621-2N7002K-7
2N7002K-7
2N7002K-7
2N7002KQ-7
2N7002K1
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PDF
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