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    132-010

    Abstract: No abstract text available
    Text: 2N7002KTB6 60V N-Channel Enhancement Mode MOSFET - ESD Protected SOT-563 FEATURES • RDS ON , VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition


    Original     		2N7002KTB6 OT-563 500mA 200mA 2002/95/EC OT-563 MIL-STD-750 2010-REV 132-010 PDF