2N7218
Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Text: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated
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2N7218,
JANTX2N7218,
JANTXV2N7218
2N7219,
JANTX2N7219,
JANTXV2N7219
2N7221,
JANTX2N7221,
JANTXV2N7221
2N7222,
2N7218
2N7219
2N7221
2N7222
JANTX2N7218
JANTX2N7219
JANTX2N7221
JANTX2N7222
JANTXV2N7218
JANTXV2N7219
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Untitled
Abstract: No abstract text available
Text: 2N7219+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)18 I(DM) Max. (A) Pulsed I(D)11 @Temp (øC)100# IDM Max (@25øC Amb)72 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125# Minimum Operating Temp (øC)-55
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2N7219
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Untitled
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/596K 17 April 2013 SUPERSEDING MIL-PRF-19500/596J 14 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/596K
MIL-PRF-19500/596J
2N7218,
2N7219,
2N7221,
2N7222,
2N7218U,
2N7219U,
2N7221U,
2N7222U,
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2N7219U
Abstract: 2N7218U 2N7221 2N7221U 2N7219U JANTX 2N7218 2N7219 2N7222 2N7222U 2N7219 JANTXV
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 July 2009. MIL-PRF-19500/596J 14 April 2009 SUPERSEDING MIL-PRF-19500/596H 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/596J
MIL-PRF-19500/596H
2N7218,
2N7219,
2N7221,
2N7222,
2N7218U,
2N7219U,
2N7221U,
2N7222U,
2N7219U
2N7218U
2N7221
2N7221U
2N7219U JANTX
2N7218
2N7219
2N7222
2N7222U
2N7219 JANTXV
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2N7219U JANTX
Abstract: 2N7219U 2N7221U mos die 2N7218 2N7218U 2N7219 2N7221 2N7222 2N7222U
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 November 2002. MIL-PRF-19500/596E 14 August 2002 SUPERSEDING MIL-PRF-19500/596D 13 September 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,
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MIL-PRF-19500/596E
MIL-PRF-19500/596D
2N7218,
2N7219,
2N7221,
2N7222,
2N7218U,
2N7219U,
2N7221U,
2N7222U,
2N7219U JANTX
2N7219U
2N7221U
mos die
2N7218
2N7218U
2N7219
2N7221
2N7222
2N7222U
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PD9555
Abstract: LS 1316 2N7219 555C IRFM240 2N7219 JANTX 2N721
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM 240 SN7S19 JANTXSN7S19 JANTXVSN7S19 [REF: MIL-S-1S500/596] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET11 technology ¡s the key to International
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OCR Scan
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IRFM240
JANTXSN7S19
JANTXVSN7S19
MIL-S-1S500/596]
HEXFET11
irfm240d
irfm240u
O-254
MIL-S-19500
PD9555
LS 1316
2N7219
555C
IRFM240
2N7219 JANTX
2N721
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2N7219
Abstract: 555C IRFM240 JANTXV2N7219 2N7219 JANTX
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I« R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM840 8N7S19 JANTX2N7219 "‘ JANTXV2N7219 N-CHANNEL [REF: M IL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International
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OCR Scan
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IRFMS40
JANTXSN7S19
JANTXV2N7219
MIL-S-19500/5S6]
IRFM240D
IRFM240U
O-254
MIL-S-19500
2N7219
555C
IRFM240
JANTXV2N7219
2N7219 JANTX
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2sc 1364 transistor
Abstract: LS 1316 0/2sc 1364 transistor
Text: Data Sheet No. PD-9.555C INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMS4G 2IM7219 2N7219 JANTXVSN7S1S N-CHANNEL [REF: MIL-S-19500/5S6] Product Summary 200 Volt, 0.18 Ohm HEXFET The HEXFET® technology is the key to International
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OCR Scan
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2IM7219
JANTX2N7219
MIL-S-19500/5S6]
IRFM240D
IRFM240U
O-254
MIL-S-19500
2sc 1364 transistor
LS 1316
0/2sc 1364 transistor
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PDF
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jantxv2n7224
Abstract: 2N7225
Text: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3
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OCR Scan
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IRFG110,
2N7334,
JANTX2N7334,
JANTXV2N7334.
I-405
FV064.
FV360.
FV460.
jantxv2n7224
2N7225
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Untitled
Abstract: No abstract text available
Text: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017
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OCR Scan
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IRFM044
IRFM054
IRFM064
IRFM140
2N7218
JANTX2N7218
JANTXV2N7218
IRFM150
2N7224
JANTX2N7224
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2N7334
Abstract: irfg9110 H24 SMD
Text: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130
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OCR Scan
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
2N7334
irfg9110
H24 SMD
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MO-D36AB
Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Text: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for
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OCR Scan
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MIL-S-19500
T0-254AA
T0-204AA/AE
MO-D36AB
IRF9510 SEC
IRF510 SEC
2n6845 jantx
D 10.7 A
IRF540 smd
irf740 STAND FOR
irfm9230
2N7237 JANTXV
BC 542
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