2N7221 JANTX Search Results

2N7218

Abstract: 2N7219 2N7221 2N7222 JANTX2N7218 JANTX2N7219 JANTX2N7221 JANTX2N7222 JANTXV2N7218 JANTXV2N7219
Contextual Info: 2N7218, JANTX2N7218, JANTXV2N7218 2N7219, JANTX2N7219, JANTXV2N7219 2N7221, JANTX2N7221, JANTXV2N7221 2N7222, JANTX2N7222, JANTXV2N7222 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED TO MIL-PRF-19500/596 100V Thru 500V, Up to 28A, N-Channel, MOSFET Power Transistor, Repetitive Avalanche Rated

i326

Abstract: I327
Contextual Info: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER I Q R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM340 2N7221 JANTX2N7221 JANTXV2N7221 N-CHANNEL [REF: M IL -S -19500/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

wm9 transistor

Abstract: DIODE wm9 Ior 405 transistor transistor wm9 2N7221 IRFM340 JANTX2N7221 i-328 FM10A 2sc 1364 transistor
Contextual Info: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM340 SN7SS1 2N7221 JANTXVSN7SS1 REP: MIL.-S-1SSOO/596] 400 Volt, 0.55 Ohm HEXFET The HEXFET® technology is the key to International

2N7221 JANTX

Abstract: IQR 2400 2N7221 IRFM340 JANTXV2N7221
Contextual Info: Data Sheet No. PD-9.490C INTERNATIONAL RECTIFIER \ I & R \ REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL IRFM34Q 2 INI7221 2N7221 JANTXV2N7221 [REF: MIL-S-195QO/596 400 Volt, 0.55 Ohm HEXFET Product Summary The HEXFET® technology is the key to International

Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. MIL-PRF-19500/596K 17 April 2013 SUPERSEDING MIL-PRF-19500/596J 14 April 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

2N7219U

Abstract: 2N7218U 2N7221 2N7221U 2N7219U JANTX 2N7218 2N7219 2N7222 2N7222U 2N7219 JANTXV
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 July 2009. MIL-PRF-19500/596J 14 April 2009 SUPERSEDING MIL-PRF-19500/596H 24 July 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

2N7219U JANTX

Abstract: 2N7219U 2N7221U mos die 2N7218 2N7218U 2N7219 2N7221 2N7222 2N7222U
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 14 November 2002. MIL-PRF-19500/596E 14 August 2002 SUPERSEDING MIL-PRF-19500/596D 13 September 1996 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT,

jantxv2n7224

Abstract: 2N7225
Contextual Info: Government and Space Designer's Manual Table of Contents Section & Page No. HEXFET IRF S E R IE S .1-3

Contextual Info: International Government and Space HEXFET Power MOSFETs XORlRe cB fie r Hermetic Package N & P Channel Case •d @ TP = 25°C lp @ Tq = 100°C R thJC Max. Pd @ TC = 25°C Outline A (K/W) (W) Number (1) 0.04 (*> 35 28 1.0 125 0.027 35 35 0.83 150 60 0.017

406J

Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for