Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N930 JANTX Search Results

    SF Impression Pixel

    2N930 JANTX Price and Stock

    Microchip Technology Inc Jantx2N930

    Bipolar Transistors - BJT Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Jantx2N930 210
    • 1 $9.34
    • 10 $9.34
    • 100 $8.9
    • 1000 $8.63
    • 10000 $8.63
    		Buy Now

    Microchip Technology Inc Jantxv2N930

    Bipolar Transistors - BJT Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Jantxv2N930
    • 1 -
    • 10 -
    • 100 -
    • 1000 $10.43
    • 10000 $10.43
    		Get Quote

    Microchip Technology Inc JANTX2N930UB/TR

    Bipolar Transistors - BJT Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JANTX2N930UB/TR
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Microchip Technology Inc JANTXV2N930UB/TR

    Bipolar Transistors - BJT Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JANTXV2N930UB/TR
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Raytheon 2N930JANTX

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N930JANTX 89
    • 1 $28.2324
    • 10 $28.2324
    • 100 $22.5859
    • 1000 $22.5859
    • 10000 $22.5859
    		Buy Now
    Find more 2N930 JANTX price and stock on Findchips.com

    2N930 JANTX Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N930JANTX New England Semiconductor NPN LOW POWER SILICON TRANSISTOR Original PDF
    2N930JANTXV New England Semiconductor NPN LOW POWER SILICON TRANSISTOR Original PDF

    2N930 JANTX Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N930J • JANTX level (2N930JX)


    Original     		2N930 MIL-PRF-19500 2N930J) 2N930JX) 2N930JV) MIL-STD-750 MIL-PRF-19500/253 6x10-4 PDF

    2N930

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    Original     		MIL-PRF-19500/253 2N930 O-206AA) 2N930 PDF

    2N930

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    Original     		MIL-PRF-19500/253 2N930 O-206AA) 2N930 PDF

    2N930

    Abstract: 2N930 JANTX
    Text: 2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N930J • JANTX level (2N930JX)


    Original     		2N930 MIL-PRF-19500 2N930J) 2N930JX) 2N930JV) MIL-STD-750 MIL-PRF-19500/253 6x10-4 2N930 2N930 JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 253 Devices Qualified Level 2N930 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


    Original     		MIL-PRF-19500/ 2N930 O-206AA) PDF

    2N930 JANTX

    Abstract: No abstract text available
    Text: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		2N930 O206AA) 5/10u 2-Aug-02 2N930 JANTX PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		2N930 O206AA) 5/10u 16-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N930 Silicon NPN Transistor Data Sheet Description Applications Semicoa Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N930J • JANTX level (2N930JX)


    Original     		2N930 MIL-PRF-19500 2N930J) 2N930JX) 2N930JV) MIL-STD-750 MIL-PRF-19500/253 6x10-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N930 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO18 Metal Package. 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) Bipolar NPN Device. VCEO = 45V 0.48 (0.019) 0.41 (0.016) dia. IC = 0.03A All Semelab hermetically sealed products


    Original     		2N930 O206AA) 5/10u 19-Jun-02 PDF

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


    Original     		MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB PDF

    2N930

    Abstract: 253K mil-prf-19500/376
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 4 May 2010. MIL-PRF-19500/253K w/AMENDMENT 1 4 February 2010 SUPERSEDING MIL-PRF-19500/253K 3 July 2008 PERFORMANCE SPECIFICATION SHEET


    Original     		MIL-PRF-19500/253K 2N930 2N930UB, MIL-PRF-19500/253 MIL-PRF-19500/376. MIL-PRF-19500. 253K mil-prf-19500/376 PDF

    JAN2N760A

    Abstract: 2N3692 2n2510 2N3565
    Text: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18


    Original     		2N760 2N760A JAN2N760A 2N929 JAN2N929 157kHz 2N3692 2n2510 2N3565 PDF

    2N930

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 25 June 2002. INCH-POUND MIL-PRF-19500/253H 25 March 2002 SUPERSEDING MIL-PRF-19500/253G 23 April 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER


    Original     		MIL-PRF-19500/253H MIL-PRF-19500/253G 2N930 2N930UB MIL-PRF-19500. PDF

    msc diode

    Abstract: 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW
    Text: Fall 1998/Winter 1999 conditioning ThinKey Package in Production Microsemi's Santa Ana division is now in production on a complete line of hermetic rectifiers. These devices are offered in the Microsemi patented ThinKey package with RθJC ratings as low as 0.2oC/W. Available in strap to


    Original     		1998/Winter 1N6815, 1N6817, 1N6818, 1N6820, 1N6821, 1N6823, MSAQX15G60K MSAQX25G60G MSAQX35G60L msc diode 2N2708 Sertech Labs mrf892 1N6815 Microsemi New MOSFETs MS1631 2N4033 "RF MOSFETs" 15KW PDF

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


    Original     		O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB PDF

    2N2222A motorola

    Abstract: 2N2484 motorola CV8616 2n2484 complementary 2N4033 2N3019 motorola transistor motorola 2n3053 2N2219 MOTOROLA BC107 2N3700 2N2219 transistor
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers These transisto rs are designed for dc to V H F a m p lifie r a p p lic a tio n s , g eneral-purpose sw itch in g a p plicatio n s, and co m ­ plem entary circuitry. Devices are listed in decreasin g order of V ( b r )C EO w ith in each p a c k a g e group.


    OCR Scan     		N2896 2N3700# 2N2484# 2N930 BCY59 BC107 2N2222A 2N5229 2N1613 2N2369 2N2222A motorola 2N2484 motorola CV8616 2n2484 complementary 2N4033 2N3019 motorola transistor motorola 2n3053 2N2219 MOTOROLA BC107 2N3700 2N2219 transistor PDF

    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


    OCR Scan     		O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet PDF

    motorola 2N2270

    Abstract: 2N5861 MOTOROLA
    Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:


    OCR Scan     		2N656 2N657 2N697 2N706 2N708 2N718 2N718A 2N869A 2N914 2N916 motorola 2N2270 2N5861 MOTOROLA PDF

    SS321 equivalent

    Abstract: DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 SE708 2N2222 chip 2N2369 transistor DZ800 MA1703
    Text: SILICON SIGNAL DIODES 100 MA TYPES Continued U @ 25°C BV @ 100//A Part Number (V) (nA) MA1703 40 50 MA1704 25 Vf Max. Max. @ Vr(V) 30 20 100 Co @ OV @ lF(mA) (V) 1.00 1.00 (pif) (nsec) Package Type trr Package Outline No. Specification Sheet No. 50 2 4


    OCR Scan     		MA1703 MA1704 SS321 SS322 SS324 SS325 SS334 SS337 SE708 DZ800 SS321 equivalent DIODE 1N9148 1N4307 1N4532 DIODE 1N3605 2N2222 chip 2N2369 transistor PDF

    2N3303

    Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
    Text: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de­


    OCR Scan     		MIL-19500 2N3303 MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan     		PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF