Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SA1012 TRANSISTOR Search Results

    2SA1012 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1012 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC2562

    Abstract: 2SA1012
    Text: Inchange Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING


    Original     		2SC2562 O-220 2SA1012 O-220) 2SC2562 2SA1012 PDF

    2sc2562

    Abstract: 2SA1012
    Text: SavantIC Semiconductor Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SA1012 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


    Original     		2SC2562 O-220 2SA1012 O-220) 2sc2562 2SA1012 PDF

    2sa1012

    Abstract: HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562
    Text: SavantIC Semiconductor Product Specification 2SA1012 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Complement to type 2SD2562 ·Low saturation voltage ·High speed switching time APPLICATIONS ·High current switching applications PINNING


    Original     		2SA1012 O-220 2SD2562 O-220) 2sa1012 HIGH VOLTAGE high current POWER PNP TRANSISTORS 2SD2562 PDF

    2sc2562

    Abstract: 2SA1012 2SA1012 jmnic
    Text: JMnic Product Specification 2SC2562 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・Complement to type 2SA1012 ・Low saturation voltage ・High speed switching time APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION


    Original     		2SC2562 O-220 2SA1012 O-220) 2sc2562 2SA1012 2SA1012 jmnic PDF

    2sa1012

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., 2SA1012 NPN EPITAXIAL SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . FEATURES *Low collector saturation voltage VCE sat =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-220


    Original     		2SA1012 2SC2562 O-220 2SA1012L 2SA1012-TA3-T 2SA1012L-TA3-T O-220 QW-R209-008 2sa1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)


    Original     		2SA1012 A1012 2SC2562 O-252 QW-R209-008 PDF

    2SA1012

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-252 1:BASE 2: COLLECTOR 3: EMITTER


    Original     		2SA1012 2SC2562 O-252 QW-R209-008 2SA1012 PDF

    2sc2562

    Abstract: 2SA1012
    Text: Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features BCE ﹒With TO-220 package ﹒Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VCBO Collector to base voltage -60 V VCEO Collector to emitter voltage


    Original     		2SA1012 O-220 2SC2562 O-220 -10mA 2sc2562 2SA1012 PDF

    2SA1012

    Abstract: transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.


    Original     		2SA1012 2SC2562 2SA1012 transistor 2sA1012 2sc2562 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A 50V 1A PNP power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)


    Original     		O-220 2SA1012 2SC2562 150mA PDF

    2SA1012

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.) *Complementary to 2SC2562 1 TO-251 1:BASE 2: COLLECTOR 3: EMITTER


    Original     		2SA1012 2SC2562 O-251 QW-R213-012 2SA1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors PNP FEATURES HIGH CURRENT SWITCHING APPLICATIONS. . Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A . High Speed Swithing Time : tstg = 1.0us (Typ.)


    Original     		O-220 2SA1012 2SC2562 150mA PDF

    transistor 2sA1012

    Abstract: 2SA1012 2sc2562
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION •Low Collector Saturation Voltage :VCE sat = -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 APPLICATIONS ·Designed for high current switching applications.


    Original     		2SA1012 2SC2562 transistor 2sA1012 2SA1012 2sc2562 PDF

    2SA1012

    Abstract: 2sc2562
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION . „ FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0 s(Typ.) *Complementary To 2SC2562 „ ORDERING INFORMATION


    Original     		2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T 2SA1012L-x-TN3-R 2SA1012G-x-TN3-R 2SA1012 2sc2562 PDF

    a1012 transistor

    Abstract: transistor A1012 a1012 a1012* transistor
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)


    Original     		2SA1012 A1012 2SC2562 O-220 QW-R203-015 a1012 transistor transistor A1012 a1012* transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR PNP FEATURES z HIGH CURRENT SWITCHING APPLICATIONS. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)


    Original     		O-252 2SA1012 2SC2562 O-252-2L 150mA PDF

    2SA1012

    Abstract: hFE is transistor to220
    Text: ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol


    Original     		2SA1012 O-220 2SA1012 hFE is transistor to220 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION .  FEATURES *Low Collector Saturation Voltage VCE SAT =-0.4V(max.) At Ic=-3A *High Speed Switching Time: tS=1.0s(Typ.) *Complementary To 2SC2562  ORDERING INFORMATION


    Original     		2SA1012 2SC2562 2SA1012L-x-TA3-T 2SA1012G-x-TA3-T O-220 2SA1012L-x-TF3-T 2SA1012G-x-TF3-T O-220F 2SA1012L-x-TM3-T 2SA1012G-x-TM3-T PDF

    2SA1012

    Abstract: 2SA1012L 2sc2562 transistor 2sA1012
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION 1 TO- 251 . FEATURES 1 TO-252 *Low collector saturation voltage VCE SAT =-0.4V(max.) at Ic=-3A *High speed switching time: tS=1.0µs(Typ.) *Complementary to 2SC2562


    Original     		2SA1012 O-252 2SC2562 O-220 O-220F 2SA1012L 2SA1012-x-TA3-T 2SA1012L-x-TA3-T 2SA1012-x-TF3-T 2SA1012L-x-TF3-T 2SA1012 2SA1012L 2sc2562 transistor 2sA1012 PDF

    2SA1012

    Abstract: 50V 1A PNP power transistor
    Text: 2SA1012 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER Features — 1 2 3 HIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562


    Original     		2SA1012 O-220 O-220 2SC2562 tp300S, -100A, 150mA 50V 1A PNP power transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 2SA1012 TRANSISTOR Plastic-Encapsulate Transistors TO-220 PNP FEATURES z High Current Switching Applications. z Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A z High Speed Swithing Time : tstg = 1.0us (Typ.)


    Original     		O-220 2SA1012 2SC2562 150mA PDF

    2sc2562

    Abstract: 2SA1012 A101 AC75 2SC2562 Toshiba
    Text: 2SA1012 TOSHIBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = —0.4V (Max.) at I q = -3 A High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1012 2SC2562. O-220AB SC-46 2-10A1A 100Xl00X2mm 2sc2562 2SA1012 A101 AC75 2SC2562 Toshiba PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 Q1 2 HIGH CURRENT SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= “ 0*4V (Max.) at 1q = -3 A Hieh Speed Switching Time : tc,+rr= l.Ows(Tvd.)


    OCR Scan     		2SA1012 2SC2562. O-220AB SC-46 2-10A1A --10mA, 200x200x2mm PDF

    transistor Ic 1A

    Abstract: No abstract text available
    Text: 2SA1012 TO SH IBA 2 S A 1 012 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS HIGH CURRENT SWITCHING APPLICATIONS. • • • INDUSTRIAL APPLICATIONS Unit in mm « ii MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage


    OCR Scan     		2SA1012 2SC2562. O-220AB SC-46 2-10A1A --50V, transistor Ic 1A PDF