2SA1180 Search Results

2SA1180

Contextual Info: JMnic Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High power dissipations APPLICATIONS ・For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter

2SA1180

Contextual Info: Inchange Semiconductor Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1

2SA1180

Contextual Info: SavantIC Semiconductor Product Specification 2SA1180 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipations APPLICATIONS ·For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION 1

2SA1180

Contextual Info: AOK AOK Semiconductor Product Specification 2SA1180 Silicon PNP P o w er Transistors DESCRIPTION • W ith TO-3 package • High power dissipations APPLICATIONS • For power switching amplifier and general purpose applications PINNING see Fig.2 PIN DESCRIPTION

Contextual Info: toaucti, One. j. \-f TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SA1180 DESCRIPTION • Collector-Emitter Breakdown Voltage:V(BR)CEO=-150V(Min.) • High Power Dissipation

2SA1180

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1180 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min.) ·High Power Dissipation APPLICATIONS ·Designed for power switching amplifier and general purpose

2SC2526

Abstract: FT1551 2SA1075 2SA1076 2SA1250 2SC2428 2SC2431 FT2551 2SC2530 2SC2530 to-3
Contextual Info: FUJITSU MICROELECTRONICS T? DE I 37Mci7ba D ü o n s s 5 3 7C Q .19 5 5 7^- <3 3 - Q /_ -_ 37 4 9 7 6 2 F u j i t s u m i c h o e l e c t r o n i c s 020000060101020100000048020202 F U J IT S U ! P1WEB Ï1 M S T 0 H LOW V O L T A G E HIGH SPEED POWER T R A N S IS T O R

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SA1108A

Abstract: 2SA1152 2SA1103, 2SA1104, 2SA1106, 2SA1186, 2SA1187 2SA1136 2SA1126 2sa1144 2SA1154 2SA1108 2SA1104 2SA1184
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 60W 2SA1102 -80 -6 -6A 150 80 -4 -2A 20* 150 (Tc=25ºC) 70W 2SA1103

THINKI transistor catalog

Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Contextual Info: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003

STRS6307

Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020
Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173