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    . 2SA1235T121E

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    2SA1235 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1235 Isahaya Electronics FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type) Original PDF
    2SA1235 Kexin Silicon PNP Epitaxial Original PDF
    2SA1235 TY Semiconductor Silicon PNP Epitaxial - SOT-23 Original PDF
    2SA1235 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SA1235 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1235 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1235 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1235 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1235 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1235 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA1235 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1235A Dong Guan Shi Hua Yuan Electron PNP TRANSISTOR Original PDF
    2SA1235A Galaxy Semi-Conductor Holdings Silicon Epitaxial Planar Transistor Original PDF
    2SA1235A Isahaya Electronics Transistor for Low Frequency Amplify Application Original PDF
    2SA1235A Isahaya Electronics FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(Super mini type) Original PDF
    2SA1235A Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1235A Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SA1235 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA1235

    Abstract: MF sot-23
    Text: Transistors IC SMD Type Silicon PNP Epitaxial 2SA1235 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Excelent lineary DC forward current gain. 0.55 Small collector to emitter saturation voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1


    Original     		2SA1235 OT-23 -100mA -10mA 100Hz 2SA1235 MF sot-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA1235A 1. BASE TRANSISTOR PNP 2. EMITTER 3. COLLECTOR 1. 0 FEATURES Power dissipation 2. 4 1. 3 W (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current -0.2 A ICM:


    Original     		OT-23 OT-23 2SA1235A -10mA -100mA, 100Hz PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 2SA1235A TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM: -0.2 A


    Original     		OT-23 2SA1235A 037TPY 950TPY 550REF 022REF PDF

    2sa1235

    Abstract: ha15090
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Unlt mm Mitsubishi 2SA1235 is a super mini silicon PNP epitaxial type transistor designed for low frequency voltage amplify application.


    OCR Scan     		2SA1235 2SA1235 -100mA, -10mA) O-236 SC-59 270Hz ha15090 PDF

    2SA1235A

    Abstract: 100HZ transistor AMm
    Text: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3AMMM is a composite transistor built with two Unit：mm 2.1 2SA1235A chips in SC-88 package. 2.0 Each transistor elements are independent.


    Original     		2SA1235A SC-88 JEITASC-88 100HZ transistor AMm PDF

    2SA1235A

    Abstract: 0F1M
    Text: 东莞市华远电子有限公 司 DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT—23 2SA1235A TRANSISTOR（ PNP ） 1. BASE 2. EMITTER 3. COLLECTOR １．０ FEATURES


    Original     		OT-23 OT--23 2SA1235A 037TPY 950TPY 550REF 022REF 2SA1235A 0F1M PDF

    isahaya

    Abstract: 2SA1235 2SA1365 2SC3440 to-236
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1365 FOR HIGH CURRENT DRIVE APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1235 is a super mini silicon NPN epitaxial type transistor designed with high collector current,small Vce sat .


    Original     		2SA1365 2SA1235 2SC3440. 180MHz JEITASC-59 O-236 isahaya 2SA1365 2SC3440 to-236 PDF

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


    OCR Scan     		2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p PDF

    2SA1235A

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR PNP SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current -0.2 A ICM :


    Original     		OT-23-3L 2SA1235A OT-23-3L -10mA -100mA, 2SA1235A PDF

    2SA1235A

    Abstract: No abstract text available
    Text: 2SA1235A 2SA1235A TRANSISTOR PNP SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current ICM : -0.2 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range


    Original     		2SA1235A OT-23-3L -10mA -100mA, 2SA1235A PDF

    Untitled

    Abstract: No abstract text available
    Text: Product specification 2SA1235 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Small collector to emitter saturation voltage. 1 Excelent lineary DC forward current gain. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1


    Original     		2SA1235 OT-23 -100mA -10mA 100Hz PDF

    2sa1229

    Abstract: 2SA1215 2SA1227 SA1244 2SA1224 2SC3115 2sC3L 2SA1216 2SA1220 2SA1220A
    Text: - 26 - Ta=25<C. *EPfäTc=25‘0 m 2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 % it if > * r y -vyà-y sn. H M H M B U 2SA1223 2SA1224 2SA1225 2SA1226 0CA 1oon to m 66 r B M B M 2SA1227A 2SA1229 2SA1232 2SA1235 2SA1237 2SA1238 2SA1239 2SA1240 2SA1241 2SA1242


    OCR Scan     		2SA1215 2SA1216 2SA1220 2SA1220A 2SA1221 2SC3116 O-126) 2SA1248 2SC3117 2sa1229 2SA1227 SA1244 2SA1224 2SC3115 2sC3L PDF

    2SA1235

    Abstract: No abstract text available
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING Unit：ｍｍ 2SA1235 is a mini package resin sealed silicon PNP epitaxial transistor, 2.5 0.5 It is designed for low frequency voltage application.


    Original     		2SA1235 2SA1235 -100mA -10mA JEITASC-59 O-236 PDF

    2SA1235A

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D SOT-23-3L Plastic-Encapsulated Transistors 2SA1235A TRANSISTOR PNP SOT-23-3L 1. BASE FEATURES 2. EMITTER 3. COLLECTOR W (Tamb=25℃) 2. 80¡ À0. 05 1. 60¡ À0. 05 0. 35 1. 9 Collector current -0.2 A ICM : Collector-base voltage


    Original     		OT-23-3L 2SA1235A OT-23-3L -10mA -100mA, 2SA1235A PDF

    2SA1235A

    Abstract: RT2A00M 2SA123
    Text: RT2A00M エミッタコモン２素子内蔵 複合 PNPトランジスタ 概 要 外形図 2.1 RT2A00M はPNPトランジスタ 2SA1235A を２素子内蔵し 単位：ｍｍ た複合 PNPトランジスタです。このトランジスタのご使用によ


    Original     		RT2A00M RT2A00M 2SA1235A SC-88A -100ARBE= -614mA 2SA1235A 2SA123 PDF

    2SA1235A

    Abstract: No abstract text available
    Text: 2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES  Low Collector Current  Low Collector Power Dissipation A L 3 3 C B


    Original     		2SA1235A OT-23 2SA1235A-ME 2SA1235A-MF -100mA, -10mA 19-Jan-2011 -100A, 2SA1235A PDF

    2SA1993

    Abstract: 2SA1602A 2sa1993 pnp 2SA1235A 2SA1602
    Text: < SMALL-SIGNAL TRANSISTOR > 2SA1235A 2SA1602A 2SA1993 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE Super mini type FEATURE ・ Super mini package for easy mounting OUTLINE DRAWING 2SA1602A ・Excellent linearity of DC forward gain 2SA1235A


    Original     		2SA1235A 2SA1602A 2SA1993 JEITASC-70 JEITASC-59 JEDECTO-236 2SA1993 2SA1602A 2sa1993 pnp 2SA1235A 2SA1602 PDF

    2SA1235A

    Abstract: RT3WLMM 100HZ 2SC3052
    Text: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3WLMM is a composite transistor built with Unit：mm 2.1 2SC3052 chip and 2SA1235A chip in SC-88 package. 2.0 Each transistor elements are independent.


    Original     		2SC3052 2SA1235A SC-88 JEITASC-88 RT3WLMM 100HZ PDF

    RT3WLMM

    Abstract: 2SA1235A 100HZ 2SC3052
    Text: PRELIMINARY RT3WLMM Composite Transistor For Low Frequency Amplify Application Silicon Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3WLMM is compound transistor built with 2SC3052 chip and 2SA1235A chip in SC-88 package. FEATURE Silicon epitaxial type


    Original     		2SC3052 2SA1235A SC-88 JEITASC-88 RT3WLMM 100HZ 2SC3052 PDF

    100HZ

    Abstract: 10KW 2SA1235A
    Text: RECTRON 2SA1235A SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR PNP FEATURES * Power dissipation PCM : 0.2 * Collector current ICM : -0.2 * Collector-base voltage V(BR)CBO : -60 * Operating and storage junction TJ,Tstg: -55OC to +150OC


    Original     		2SA1235A OT-23 -55OC 150OC OT-23 MIL-STD-202E 100HZ 10KW 2SA1235A PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR PNP SOT–23 FEATURES  Low Collector Current  Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 1. BASE Symbol


    Original     		OT-23 2SA1235A -100mA, -10mA PDF

    2SA1235

    Abstract: 2SA123 isahaya
    Text: 〈SMALL-SIGNAL TRANSISTOR〉 2SA1235 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE mini type DESCRIPTION OUTLINE DRAWING 2SA1235 is a mini package resin sealed Unit：mm silicon PNP epitaxial transistor, It is designed for low frequency voltage application.


    Original     		2SA1235 2SA1235 -100mA -10mA JEITASC-59 O-236 2SA123 isahaya PDF

    2SA1235A

    Abstract: 100HZ 0-16mA
    Text: PRELIMINARY RT3AMMM Composite Transistor For Low Frequency Amplify Application Silicon Pnp Epitaxial Type DESCRIPTION OUTLINE DRAWING Unit：mm RT3AMMM is compound transistor built with two 2SA1235A chips in SC-88 package. FEATURE Silicon pnp epitaxial type


    Original     		2SA1235A SC-88 JEITASC-88 100HZ 0-16mA PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF