Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2SA1267 Search Results

    SF Impression Pixel

    2SA1267 Price and Stock

    Others 2SA1267

    RF SMALL SIGNAL TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA1267 346
    • 1 $1.5
    • 10 $1.5
    • 100 $1.5
    • 1000 $1.5
    • 10000 $1.5
    		Buy Now

    2SA1267 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1267 Various Russian Datasheets Transistor Original PDF
    2SA1267 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SA1267 Unknown Silicon PNP Transistor Scan PDF
    2SA1267 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1267 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1267 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1267 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1267 Unknown Cross Reference Datasheet Scan PDF
    2SA1267GR Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SA1267L Korea Electronics Transistors Scan PDF
    2SA1267O Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SA1267Y Various Russian Datasheets Transistor Original PDF
    2SA1267Y Continental Device India Semiconductor Device Data Book 1996 Scan PDF

    2SA1267 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sa1267

    Abstract: No abstract text available
    Text: 2SC3199 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SA1267 * Collector Current Ic=150 mA ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic


    Original     		PDF 2SC3199 O-92S 2SA1267 100uA 100mA 10Kohm 2sa1267

    2sa1267

    Abstract: No abstract text available
    Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1267 100mA, 2sa1267

    2SA1267

    Abstract: No abstract text available
    Text: 2SA1267 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SC3199 * Collector-Emitter Voltage VCEO=-50V ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic


    Original     		PDF 2SA1267 O-92S 2SC3199 -100uA -100mA -10mA 2SA1267

    2SA1267

    Abstract: transistor 2sa1267 transistor amplifier 5v to 6v
    Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1267 100mA, 2SA1267 transistor 2sa1267 transistor amplifier 5v to 6v

    2SA1267

    Abstract: transistor 2sa1267 ST2SA1267
    Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1267 100mA, 2SA1267 transistor 2sa1267 ST2SA1267

    2SA1267

    Abstract: No abstract text available
    Text: ST 2SA1267 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1267 100mA, 2SA1267

    2SA1267

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1267 TRANSISTOR PNP TO-92S FEATURES High hFE z Excellent hFE linearing 1. EMITTER z 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol


    Original     		PDF O-92S 2SA1267 O-92S -100mA, -10mA 30MHz

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    2SA1281

    Abstract: 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267
    Text: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SA1201 -120 -5 -800 500 150 140 -5 -100 120* 27 2SA1202 -80 -5 -400


    Original     		PDF 2SA1201 2SA1202 2SA1203 2SA1204 2SA1205 2SA1206 2SA1207 2SA1208 2SA1209 2SA1210 2SA1281 2SA1277 2SA1273 2sa1274 2SA1251 2SA1218 2SA1236 2sc3248 2sa1229 2SA1267

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    FN1016

    Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
    Text: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773


    Original     		PDF 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 2N2222A 2N2369 2N2369A FN1016 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016

    2SA10150

    Abstract: 2SA708Y 2SA1266GR 2SA1015Y 2SA1267GR 2SA1267 2SA562Y 2SA1015 2SA1266-0 2SA5620
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. 2SA1015 ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 50 50 5 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Pd (W) 'c (A) @Tc=25"c 0.4 0.15 CBQ ^CB ' ces ^CE (mA) Max @ (V) (MA) Max


    OCR Scan     		PDF 2SA1015 O-92-1 2SA1015GR 2SA10150 2SA1015Y320 2SA673A 2SA708Y 2SA1266GR 2SA1015Y 2SA1267GR 2SA1267 2SA562Y 2SA1266-0 2SA5620

    2SC3875S

    Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
    Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200


    OCR Scan     		PDF Ta-25 2SC3875S 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 BC547 BC546 2Sc4370a 2SC3227 2sa1274 BC557 bc556 2sa1659a bc557

    2Sc4370a

    Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan     		PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2Sc4370a 2SC3227 BC548 ,BC558 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202

    2SA10150

    Abstract: 2sa706 2SA1267GR
    Text: TO-92 Plastic Pacings Transistors PNP Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) Maximum Ratings Type No. 2SA1015 ^CBO V CEO ^EBO (V) Mm (V) Min (V) Min 50 50 5 Po (W) (A) 0Tc=25"c 0.4 0.15 t so (pA) Max 0.1 ^C8 ^CES (V) (MA) Max


    OCR Scan     		PDF O-92-1 2SA1015 2SA1015GR 2SA673B 2SA673C 2SAG73D 2SA10150 2sa706 2SA1267GR

    2sc3227

    Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan     		PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2sc3227 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 KTC9014

    2SA1266

    Abstract: 2SA1267 2SA1267Y 2SA5620 2SA1266GR 2SA10150 2sa708y 2SA1266Y 2sa708 2SA1015
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25"C, Unless Otherwise Specified) 'c PD ^CQO VCEO ^EBO (W) (V) (A) (V) (V) Min Min Min @Tc=25“c teo ^CB 'ces ^CE ^FE e (MA) e (V) (MA) e (V) Max Max Min Max lc &


    OCR Scan     		PDF 2SA1015 O-92-1 2SA1015GR 2SA10150 2SA673 2SA673A 2SA1266 2SA1267 2SA1267Y 2SA5620 2SA1266GR 2sa708y 2SA1266Y 2sa708

    2SA1267GR

    Abstract: 2SA1267
    Text: TO-92 Plastic Package Transistors PNP M a x im u m R a tin g s Type No. 2SA1015 ^C B O ^CEO ^ EBO (V) Min (V) Min (V) Min 50 50 E le c tric a l C h a ra c te ris tic s (T a = 2 5 'C , U n le ss O th e rw is e S p e c ifie d ) Pd (W) 'c (A) @Tc=25"c 5 0.4


    OCR Scan     		PDF 2SA1015 2SA1266 2SA673B 2SA673A O-92-1 2SA673 2SA70B 2SA708R 2SA708Y 23fl33c 2SA1267GR 2SA1267

    2SC4370A

    Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
    Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)


    OCR Scan     		PDF 2SC387SS 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2SC4370A 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 bc557 2SA1504 BC337/BC327 2SC3202

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


    OCR Scan     		PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288