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    2SA130 Price and Stock

    3M Interconnect 1U30A-MB2-SA1-300

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    DigiKey 1U30A-MB2-SA1-300 Bulk 42 1
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    3M Interconnect 1U30G-MB2-SA1-300

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    DigiKey 1U30G-MB2-SA1-300 Bulk 35 1
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    3M Interconnect 1U30A-MB2-SA1-300-CE

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    DigiKey 1U30A-MB2-SA1-300-CE Box 25 1
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    Mouser Electronics 1U30A-MB2-SA1-300-CE
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    Chip1Stop 1U30A-MB2-SA1-300-CE 3
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    3M Interconnect 1U30S-MB2-SA1-300

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    DigiKey 1U30S-MB2-SA1-300 Box 15 1
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    Mouser Electronics 1U30S-MB2-SA1-300 45
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    Chip1Stop 1U30S-MB2-SA1-300 24
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    Sanken Electric Co Ltd 2SA1303

    TRANS PNP 150V 14A TO3P
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    2SA130 Datasheets (179)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA130 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA130 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA130 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SA130 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA130 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA130 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA130 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA130 Unknown Cross Reference Datasheet Scan PDF
    2SA1300 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA1300 Unisonic Technologies PNP EPITAXIAL SILICON TRANSISTOR Original PDF
    2SA1300 Various Russian Datasheets Transistor Original PDF
    2SA1300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1300 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1300 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1300 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1300 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1300 Unknown Cross Reference Datasheet Scan PDF
    2SA1300 Toshiba PNP transistor Scan PDF
    2SA1300 Toshiba TRANSISTOR (STROBO FLASH MEDIUM POWER AMPLIFIER APPLICATIONS) Scan PDF
    ...

    2SA130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1308

    Abstract: No abstract text available
    Text: JMnic Product Specification 2SA1308 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Low collector saturation voltage APPLICATIONS ・High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline TO-220F and symbol


    Original     		PDF 2SA1308 O-220F O-220F) -10mA -100V 2SA1308

    2SA1306

    Abstract: 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298 2SC3298A 2SC3298B
    Text: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B ・ DESCRIPTION ・With TO-220Fa package ・Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS ・Power amplifier applications ・Driver stage amplifier applications


    Original     		PDF 2SA1306 2SA1306A 2SA1306B O-220Fa 2SC3298 2SC3298A 2SC3298B 2SA1306 2SA1306A 2SA1306 2SC3298 2SA1306B 2SC3298B

    2SC3296

    Abstract: pnp 500ma 40v 2SA1304
    Text: Inchange Semiconductor Product Specification 2SA1304 Silicon PNP Power Transistors • DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdown voltage APPLICATIONS ·Power amplifier applications ·Vertical output applicatios PINNING


    Original     		PDF 2SA1304 O-220Fa 2SC3296 -500mA -120V 2SC3296 pnp 500ma 40v 2SA1304

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE  DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications.  FEATURES * High DC Current Gain and Excellent hFE Linearity. * hFE 1 =140-600, (VCE= -1V,IC= -0.5A)


    Original     		PDF 2SA1300 -50mA) 2SA1300L-xx-AB3-R 2SA1300G-xx-AB3-R 2SA1300L-xx-T92-B 2SA1300G-xx-T92-B 2SA1300L-xx-T92-K 2SA1300G-xx-T92-K OT-89 QW-R208-012

    2SA1302

    Abstract: 2SC3281 2SA1302 2SC3281
    Text: SavantIC Semiconductor Product Specification 2SA1302 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SC3281 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SA1302 2SC3281 -200V; 2SA1302 2SC3281 2SA1302 2SC3281

    2SC3280

    Abstract: 2sa1301 2SC3280 2SA1301 Power IC
    Text: SavantIC Semiconductor Product Specification 2SC3280 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1301 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SC3280 2SA1301 2SC3280 2sa1301 2SC3280 2SA1301 Power IC

    2SC3281

    Abstract: 2SC3281 data sheet 2SA1302
    Text: SavantIC Semiconductor Product Specification 2SC3281 Silicon NPN Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SA1302 APPLICATIONS ·Power amplifier applications ·Recommended for 100W high fidelity audio frequency amplifier output stage


    Original     		PDF 2SC3281 2SA1302 2SC3281 2SC3281 data sheet 2SA1302

    2SA1307

    Abstract: 2SC3299
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1307 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.4V(Max.)@IC= -3A ·High Switching Speed ·Complement to Type 2SC3299 APPLICATIONS ·Designed for high current switching applications.


    Original     		PDF 2SA1307 2SC3299 2SA1307 2SC3299

    2sa1306

    Abstract: 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION •Good Linearity of hFE ·High Collector-Emitter Breakdown VoltageV BR CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B ·Complement to Type 2SC3298/A/B


    Original     		PDF 2SA1306/A/B -160V -2SA1306 -180V -2SA1306A -200V -2SA1306B 2SC3298/A/B 2SA1306 2SA1306A 2sa1306 2SA1306 2SC3298 2SA1306A 2SA1306/A Transistor 2SA1306B 2sc3298 circuits 2SC3298 transistor 2SC3298A

    2SA1300

    Abstract: No abstract text available
    Text: ST 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA1300 2SA1300

    2sA1300 transistor

    Abstract: 2SA1300
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range


    Original     		PDF 2SA1300 -10mA -100mA 30MHz 2sA1300 transistor 2SA1300

    2SA1300

    Abstract: No abstract text available
    Text: 2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


    Original     		PDF 2SA1300 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SA1300 TRANSISTOR PNP TO-92 FEATURES z High DC Current Gain and Excellent hFE Linearity z Low Saturation Voltage 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)


    Original     		PDF 2SA1300 -10mA -100mA 30MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors 2SA1309A TRANSISTOR PNP TO-92S FEATURES Power dissipation 1. EMITTER PCM : 0.3 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.1 A Collector-base voltage V(BR)CBO : -60


    Original     		PDF O-92S 2SA1309A O-92S -50mA, 200MHz

    2SA1302

    Abstract: Toshiba 2Sa1302
    Text: 2SA1302 SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm PO W ER AM PLIFIER APPLICATIONS. • • 20.5M AX. Complementary to 2SC3281 Recommend for 100W High Fidelity Audio Frequency Amplifier Output Stage. 03 .3 ± 0.2 3Í- M A X IM U M RATINGS Ta = 25‘,C SYMBOL


    OCR Scan     		PDF 2SA1302 2SC3281 2-21F1A 2SA1302 Toshiba 2Sa1302

    2SC3297

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1305 POWER AMPLIFIER APPLICATIONS. Unit in mm CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. 0 3 .2 ± 0.2 FEATURES: Ytfi . Good Linearity of hpg ^ ♦ Complementary to 2SC3297 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC + 0.25


    OCR Scan     		PDF 2SA1305 2SC3297 2SC3297

    2SA1301 TOSHIBA

    Abstract: No abstract text available
    Text: 2SA1301 SILICON PNP TRIPLE DIFFUSED TYPE U nit in mm PO W ER AM PLIFIER APPLICATIONS. • 2 0 .SM A X . . 0 3 . 3 ± 0 .2 Complementary to 2SC3280 Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. í¡- M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SA1301 2SC3280 2-21F1A --160V, --50mA, 2SA1301 TOSHIBA

    2SC3296

    Abstract: IC vertical lg
    Text: 2SC3296 SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm VERTICAL OUTPUT APPLICATIONS. 1 Û3MAX. 03.2±Q2 FEATURES: . Wide Safe Operating Area. . Complementary to 2SA1304. 1.2 + 0.2 5 0.76-0-15 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC


    OCR Scan     		PDF 2SC3296 2SA1304. 500mA 500mA, 2SC3296 IC vertical lg

    2SA1301

    Abstract: 2SC3280 2SA1301
    Text: SILICON PNP TRIPLE DIFFUSED TYPE 2SA1301 POWER AMPLIFIER APPLICATIONS. Unit in mm 2 & 5 MAX. iZS3.3±aZ FEATURES: . Complementary to 2SC3280 . Recommend for SOW High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta=25 C SYMBOL RATING Collector-Base Voltage


    OCR Scan     		PDF 2SA1301 2SC3280 -50mA, 2SA1301 2SC3280 2SA1301

    2SC3281

    Abstract: 100W AUDIO ic AMPLIFIER 2SA1302
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SC3281 POWER AMPLIFIER APPLICATIONS. Unit in mm i 2 0.5 FEATURES: . Complementary to 2SA1302 MAX . 0 3 .3 ± a s oi —I IQ ' . Recommend for 100W High Flderity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta-25 C


    OCR Scan     		PDF 2SC3281 2SA1302 Ta-25 2SC3281 100W AUDIO ic AMPLIFIER 2SA1302

    2SA1308

    Abstract: No abstract text available
    Text: AOK AOK Semiconductor P roduct Specification 2SA1308 Silicon PNP P o w er Transistors DESCRIPTIO N • W ith TO -220F package • Low collector saturation voltage A PP LIC A TIO N S • H igh current sw itching applications PINNING PIN DESCRIPTION 1 Base 2


    OCR Scan     		PDF 2SA1308 O-220F Transist-100 -100V

    2SA1300

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1300 2 S A 1 300 TOSHIBA TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M EDIUM PO W ER AM PLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity : hFE (1) = 140-600 (Vqe = - IV, Iq = -0.5A)


    OCR Scan     		PDF 2SA1300 961001EAA2' 2SA1300

    Untitled

    Abstract: No abstract text available
    Text: 2SA1300 T O SH IB A 2 S A 1 300 TO S H IB A TRANSISTOR STROBO FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm M E D IU M POWER AMPLIFIER APPLICATIONS • High DC Current Gain and Excellent hEE Linearity :h F E (l) = 14O~6OO(V0E= - I V , I q = —0.5A)


    OCR Scan     		PDF 2SA1300