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    2SA1318 TRANSISTOR Search Results

    2SA1318 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    2SA1318 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SC3331

    Abstract: 2Sa1318
    Text: Ordering number : EN 1600A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1318/2SC3331 AF Amp Applications


    Original     		2SA1318/2SC3331 2SC3331 2Sa1318 PDF

    2SA1318

    Abstract: No abstract text available
    Text: 2SA1318 2SA1318 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.2 A Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		2SA1318 -100mA, -10mA 2SA1318 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SA1318 TRANSISTOR PNP 1. EMITTER 2. COLLECTOR FEATURES z Large Current Capacity and Wide ASO 3. BASE APPLICATIONS z Capable of Being Used in The Low Frequency to High


    Original     		2SA1318 Te-50 -100mA -10mA PDF

    2SA1318

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA1318 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.2 A ICM Collector-base voltage V V(BR)CBO : -60


    Original     		2SA1318 -100mA, -10mA 2SA1318 PDF

    2SA1318

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1318 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.5 W (Tamb=25℃) 2. COLLECTOR Collector current : -0.2 A ICM Collector-base voltage V V(BR)CBO : -60 Operating and storage junction temperature range


    Original     		2SA1318 -100mA, -10mA 2SA1318 PDF

    equivalent transistor 8550

    Abstract: 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA853 HN / BC 559 / 9015 2SA978 HN / BC 560 / 9015 2SA1318 HN / BC 556 / 9015 2SA854 HN / BC 327 / 8550


    Original     		To-92 2SA853 2SA978 2SA1318 2SA854 2SA987 2SA1323 2SA855 2SA989 2SA1334 equivalent transistor 8550 2sa1015 equivalent 8550 pnp transistor Bc 8550 9015 transistor transistor BC 557 TRANSISTOR BC 327 PNP 8550 9015 pnp transistor 9015 PDF

    2SA1318

    Abstract: TRANSISTOR 2sa1318 2SA1318 transistor 2sa1318-t 2SA1318T
    Text: 2SA1318 -0.2 A, -60 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Large Current Capacity and Wide ASO G APPLICATIONS  H Capable of Being Used in The Low Frequency to High


    Original     		2SA1318 2SA1318-R 2SA1318-S 2SA1318-T 2SA1318-U 19-Jan-2011 -10mA 2SA1318 TRANSISTOR 2sa1318 2SA1318 transistor 2SA1318T PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1318 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.100 h(FE) Max. Current gain.560


    Original     		2SA1318 Freq200M PDF

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


    Original     		2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C PDF

    MBR1620CT

    Abstract: 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106
    Text: MCC PART INDEX Diodes PART NUMBER 1.5KE10(C)(A) 1.5KE100(C)(A) 1.5KE11(C)(A) 1.5KE110(C)(A) 1.5KE12(C)(A) 1.5KE120(C)(A) 1.5KE13(C)(A) 1.5KE130(C)(A) 1.5KE15(C)(A) 1.5KE150(C)(A) 1.5KE16(C)(A) 1.5KE160(C)(A) 1.5KE17(C)(A) 1.5KE170(C)(A) 1.5KE18(C)(A) 1.5KE180(C)(A)


    Original     		5KE10 5KE100 5KE11 5KE110 5KE12 5KE120 5KE13 5KE130 5KE15 5KE150 MBR1620CT 1.5Ke240 MBR5020 MBR5045PT BC337 AP6KE15C S9012 s9018 MP106 MB-106 PDF

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6 PDF

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882 PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


    Original     		2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    u560100

    Abstract: 2SA1318 2sc3331 transistor 2SC3331 2sa131
    Text: Ordering number: EN 16 00A 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors A F Am p Applications M, ,ár%& Use . Capable of being used in the low frequenoy to high frequency range. Features ♦ Large current oapaeity and wide ASO. : 2SA1318


    OCR Scan     		2SA1318/2SC3331 2SA1318 u560100 2sc3331 transistor 2SC3331 2sa131 PDF

    2sc3331 transistor

    Abstract: 2SA1318 2SC3331 PJ 431
    Text: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial Planar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318


    OCR Scan     		2SA1318/2SC3331 2SA1318 2034/2034A SC-43 7tlt17D7b 2sc3331 transistor 2SC3331 PJ 431 PDF

    u560100

    Abstract: 2sc3331 transistor 2SA1318 2SC3331 3331-J TRANSISTOR 2sa1318
    Text: Ordering number: EN 16 Q 0A N 0.I6O O A ¡I 2SA1318/2SC3331 PNP/ NPN Epitaxial P lanar Silicon Transistors SAiYOi AF Amp Applications Use Capable of being used in the low frequency to high frequency range. Features . Large current capacity and wide ASO. : 2SA1318


    OCR Scan     		2SA1318/2SC3331 2SA1318 SC-43 u560100 2sc3331 transistor 2SC3331 3331-J TRANSISTOR 2sa1318 PDF

    117Q

    Abstract: 2SC536SPA RA101Q "Zener Diodes" sanyo DS442 2SD1649 2SC4640 2SA1317 2SC3331 2SA1782
    Text: Ordering number: EN5335A No.5335A Notification of the Discontinuation of Discrete Devices Affected Products : Products listed below Thank you for your continued use of Sanyo products. This notice announces the discontinuation of Sanyo semiconductor products. Please make a note of this discontinuation.


    OCR Scan     		EN5335A 2SA608SPA 2SA1317 2SA1782 2SC536SPA 2SC3330 2SC4640 2SA1318 2SA608NP 2SA1783 117Q RA101Q "Zener Diodes" sanyo DS442 2SD1649 2SC3331 PDF

    2SB1406

    Abstract: 2SK715
    Text: Product Selection Guide by Function Very High Frequency Applications Classified by package and arran g ed in order of decreasing fr. M inus sign for P N P is om itted due to space lim itations. PG tM A G ,N F:f= 0.9G H z Type N um ber Pilgt* 2SC3779 NP NP


    OCR Scan     		2SC3779 2SC3778 2SC3777 2SC3776 2SB1406 2SK715 PDF

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


    OCR Scan     		2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288 PDF

    TO-32-070

    Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
    Text: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)


    OCR Scan     		T0220ML TO-32-070 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124 PDF