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    2SA1411 Search Results

    2SA1411 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1411 Kexin PNP Silicon Epitaxial Transistor Original PDF
    2SA1411 NEC Semiconductor Selection Guide 1995 Original PDF
    2SA1411 TY Semiconductor PNP Silicon Epitaxial Transistor - SOT-23 Original PDF
    2SA1411 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1411 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1411 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1411 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1411 Toshiba PNP Silicon Epitaxial Transistor Scan PDF

    2SA1411 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1411

    Abstract: VEBo-10V
    Text: Transistors IC SMD Type Silicon PNP Epitaxia 2SA1411 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Very high DC current gain:hFE=500 to 1600. 0.4 3 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High VEBO Voltage:VEBO=-10V 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SA1411 OT-23 -50mA 2SA1411 VEBo-10V

    Untitled

    Abstract: No abstract text available
    Text: Transistors Transistors IC SMD SMD Type Type Product specification 2SA1411 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High VEBO Voltage:VEBO=-10V +0.1 1.3-0.1 +0.1 2.4-0.1 Very high DC current gain:hFE=500 to 1600. 0.4 3 2 +0.1 0.95-0.1 +0.1


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    PDF OT-23 -50mA

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SA1411 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 High VEBO Voltage:VEBO=-10V +0.1 1.3-0.1 +0.1 2.4-0.1 Very high DC current gain:hFE=500 to 1600. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1


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    PDF OT-23 -50mA

    BF479

    Abstract: 2N5456 2SA1409-L KT361 2SB793 bsw21 LOW-POWER SILICON PNP 2SB1117L 2sb1117k BC357
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 2SA719 2SA730 BC357 BC357 BC357 BSW73 KT3107G BC178 BC178A 2SA890 ~~~g~g 15 20 KT31 070 BC178B MPS6519 2SC2724 2SB766 2SB766A 2SB793 2SA1409L 2~A141UL 25 30 2SA1411 2SA1411 2SA1409K 2SA1410K KT361 A


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    PDF 2SA719 2SA730 BC357 BSW73 KT3107G BC178 BC178A 2SA890 BF479 2N5456 2SA1409-L KT361 2SB793 bsw21 LOW-POWER SILICON PNP 2SB1117L 2sb1117k

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    2sk2500

    Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


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    PDF C11178JJCV0IF0012 C11178JJCV0IF MIL-HDBK-217 MILMIL10100 MIL-HDBK-217Fit 2sk2500 UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


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    PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    transistor NEC 2SK2500

    Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    PDF MIL-HDBK-217 C11178EJCV0IF transistor NEC 2SK2500 NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24

    uPC2581

    Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
    Text: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8


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    PDF PD7500 X10679EJAV0SG00 MF-1134) 1995P uPC2581 uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


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    PDF 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    PDF

    M15 transistor

    Abstract: 2SA1411
    Text: SILIC O N TRANSISTOR 2SA1411 A U D IO F R E Q U E N C Y A M P L IF IE R , S W IT C H IN G P N P S IL IC O N E P IT A X IA L T R A N S IS T O R FEATURES P A C K A G E D IM E N S IO N S • V e ry high D C current gain : h p E = 5 0 0 to 160 0 in m illim eters


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    PDF 2SA1411 IC--50 M15 transistor 2SA1411

    2SA1264N

    Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
    Text: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207


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    PDF 2SB1546 2SA143Z 2SB1207 2SA1264N 2SB966 2SB1362 2SB1508 2SB1373 2SA1821 2SA1832 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    K68A

    Abstract: a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557
    Text: QUICK REFERENCE GUIDE MINI MOLD SC-59 Q U IC K R E FE R EN C E TA B L E Switching Diodes □ m Leadless Type Q U IC K REFER EN C E TA B LE (Switching Diodes) □ \ ^ V R (V ) GENERAL P UHPO SE 30 50 70 LS53 LS 54 LS 55 LS 953 LS 954 L S 955 100 S IN G L E


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    PDF SC-59 DO-35 SC-63) T0-220AB K68A a1f4m A1A4M R1Ik N1A4M 2SK104 2SA1138 a1l4m n1f4m 2SD1557

    fe1m15

    Abstract: No abstract text available
    Text: SILICON TR A N SIST O R 2SA 1411 A U D IO FREQUENCY AM PLIFIER, SW IT C H IN G PNP SIL IC O N EPITA XIA L T R A N SIST O R FEATURES PACKAGE DIMENSIONS • V e ry high D C current gain : h p g = 5 0 0 to 160 0 in millimeters • H igh V E a o V oltage : V E B 0 ^ - 1 0 V


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    PDF 2SA1411 fe1m15

    2SA1410

    Abstract: 2-7D101A 2SA1441 2SA1409 HV COB 2SA1407 2SA1408 2SA1412 2SA1412-Z 2SA1413
    Text: - 34 - <Ta=25'C.*EniiTc=25‘ Ç & £ s iê VcBO V) VCEO (V) lc (D C ) (A) Pc m Pci (W) ICBO (W) M fà ft 1É (Ta=25‘ C) , hF (/¿A) VcB (V) Vct (V) (A) [*EP[âtypüf] , (V) > , , V le (A) (V) Ib (A) 2SA1406 CRT Vout -200 -200 -0.1 1. 2 7 -0.1 -150 40


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    PDF 2SA1407 2SA1408 2SA1409 2SA1410 2SC3668 2-7D101A) 2SA1428 2SC3669 2SA1429 2-7D101A 2SA1441 HV COB 2SA1408 2SA1412 2SA1412-Z 2SA1413

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


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    PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288