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    2SA1621 Search Results

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    2SA1621 Price and Stock

    Toshiba America Electronic Components 2SA1621-Y(TE85L,F)

    Bipolar Transistor (BJT)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip1Stop 2SA1621-Y(TE85L,F) 5,050
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    2SA1621 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1621 Toshiba Japanese - Transistors Original PDF
    2SA1621 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA1621 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1621 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SA1621 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA1621 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA1621 Toshiba SILICON PNP EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SA1621 Toshiba TRANSISTOR (AUDIO POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SA1621 Toshiba PNP transistor Scan PDF
    2SA1621O Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF
    2SA1621Y Toshiba Silicon PNP Epitaxial Type Transistor Scan PDF

    2SA1621 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1621

    Abstract: 2SC4210
    Text: 2SC4210 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC4210 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SA1621 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


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    PDF 2SC4210 2SA1621 O-236MOD SC-59 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original
    PDF 2SC4210 2SA1621

    2SA1621

    Abstract: 2SC4210
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 • Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SA1621 2SC4210 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SA1621 2SC4210 O-236MOD

    Untitled

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • • Unit: mm High hFE: hFE = 100 to 320 Complementary to 2SC4210 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


    Original
    PDF 2SA1621 2SC4210

    2SA1621

    Abstract: 2SC4210
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 · Complementary to 2SC4210 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SA1621 2SC4210 O-236MOD 2SA1621 2SC4210

    2SC4210

    Abstract: 2SA1621
    Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 · Complementary to 2SA1621 Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SC4210 2SA1621 O-236MOD 25transportation 2SC4210 2SA1621

    2SA1621

    Abstract: 2SC4210
    Text: 2SA1621 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1621 ○ 低周波電力増幅用 単位: mm • 直流電流増幅率が高い。: hFE = 100~320 • 2SC4210 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C)


    Original
    PDF 2SA1621 2SC4210 O-236MOD SC-59 2SA1621 2SC4210

    2SA1621

    Abstract: 2SC4210
    Text: 2SC4210 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4210 Audio Power Amplifier Applications • High DC current gain: hFE = 100~320 • Complementary to 2SA1621 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating


    Original
    PDF 2SC4210 2SA1621 2SA1621 2SC4210

    2SA1621

    Abstract: No abstract text available
    Text: 2SA1621 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1621 Audio Power Amplifier Applications • High hFE: hFE = 100~320 • Complementary to 2SC4210 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage


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    PDF 2SA1621 2SC4210 2SA1621

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


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    PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA1621 2 S A 1 621 TO S H IB A TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 - 0 . 3 • • High hpE : hpE = 100~320 Complementary to 2SC4210 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    PDF 2SA1621 2SC4210

    SA1673

    Abstract: 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671 2SA1615 2SA1615-Z 2SA1617
    Text: - 44 - Ta=25U*Ep(ÏTc=25<C m 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SA1619A 2SA1620 2SA1621 2SA1622 2SA1623 2SA1624 2SA1625 2SA1626 2SA1627 2SA1630 2SA1633 2SA1634 2SA1635 2SA1641 2SA1643 2SA1653 2SA1654 2SA1655 2SA1656 2SA1666 2SA1667 2SA1668


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    PDF 2SA1615 2SA1615-Z 2SA1616 2SA1617 2SA1618 2SA1619 2SC4362 SC-59 2SA1655 2SC4363 SA1673 2SA1623 2SC4387 2sa161 2SA1616 2SA1670 2SA1671

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP EPITAXIAL TYPE 2SA1621 Unit in mm + 0.5 2.5 - 0.3 AUDIO POWER AMPLIFIER APPLICATIONS. • High hpE: hFE~100~320 • Complementary to C4210 MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT vCB0 -35 V Collector-Emitter Voltage vCE0 -30


    OCR Scan
    PDF 2SA1621 C4210 -10mA -100mA -700mA -500mA,

    2SA1621

    Abstract: 2SC4210
    Text: 2SC4210 TO SH IBA 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : Complementary to 2SA1621 + 0.5 2 . 5 - 0.3 = 100~320 + k 1-5 0.25 - ° - 15 >i I- MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan
    PDF 2SC4210 2SA1621 O-236MOD SC-59 2SA1621 2SC4210

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SC4210 2SC4210 T O SH IB A TRA NSISTO R SILICON NPN EPITAXIAL TYPE PCT PROCESS A U D IO PO W ER AM PLIFIER A PPLICATIO NS • • High DC Current Gain : Complementary to 2SA1621 U n it in m m = 100~320 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan
    PDF 2SC4210 2SA1621 O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1621 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 6 21 U nit in mm A U D IO POWER AMPLIFIER APPLICATIONS + 0.5 2 .5 -0 .3 • High IrpE : ^FE = 100—320 • Complementary to 2SC4210 + 0 .2 5 1 . 5 - 0 .1 5 ivìAXi M ü ivi RATi NGS (Ta = 2 5CC)


    OCR Scan
    PDF 2SA1621 2SC4210 O-236MOD SC-59

    sc4210

    Abstract: 2SA1621 2SC4210
    Text: TOSHIBA 2SC4210 2SC4210 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO PO W ER AM PLIFIER APPLICATIONS • • High DC Current Gain : hjpg — 100~320 Complementary to 2SA1621 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    PDF 2SC4210 SC4210 2SA1621 O-236MOD sc4210 2SA1621 2SC4210

    2SA1621

    Abstract: 2SC4210 A1621
    Text: TO SHIBA 2SA1621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 621 AUDIO PO W ER AM PLIFIER APPLICATIONS Unit in mm + 0.5 2.5 - 0.3 High hpE : hpE = 100~320 • Complementary to 2SC4210 + 0.25 + 0.1 0 .4 - 0 .0 5 • i SYMBOL CHARACTERISTIC


    OCR Scan
    PDF 2SA1621 2SC4210 961001EAA2' 2SA1621 2SC4210 A1621

    2SA1621

    Abstract: 2SC4210 A1621
    Text: 2SA1621 TO SH IBA 2 S A 1 621 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO POWER AMPLIFIER APPLICATIONS + 0.5 • • High hpE • hpE = 100~320 Complementary to 2SC4210 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage


    OCR Scan
    PDF 2SA1621 2SC4210 O-236MOD SC-59 2SA1621 A1621

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737