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    2SA1680 TRANSISTOR Search Results

    2SA1680 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SA1680 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 2sa1680 TRANSISTOR a1680 A1680 transistor 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SC4408 transistor 2SA1680

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408.

    transistor A1680

    Abstract: A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 A1680 2SA1680 2SC4408 2sa1680 TRANSISTOR

    transistor A1680

    Abstract: 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications • Unit: mm Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. transistor A1680 2SA1680 A1680 transistor 2sa1680 TRANSISTOR transistor 2SA1680 2SC4408 A1680

    transistor A1680

    Abstract: 2sa1680 TRANSISTOR A1680
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408. O-92MOD transistor A1680 2sa1680 TRANSISTOR A1680

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1680 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = −0.5 V (max) • High collector power dissipation: PC = 900 mW (Ta = 25 °C)


    Original     		PDF 2SA1680 2SC4408.

    2sc4793

    Abstract: 2SC2482 2SA1145 2SC2705 2sa1680 2SA1837 2sc2655 npn general purpose transistors application 2sd201
    Text: contents www search print index quit Power Devices ➔ ➔ • Standard Bipolar Transistors Medium Power Unit in mm LSTM TO-92 MOD VCEO PNP (V) 2SA1020 2SA1680 2SA1145 49.1 49.1 49.2 IC P hfE@ VCE (V) NPN 2SC2655 2SC2482 2SC4408 2SC2705 50 300 50 150 (A)


    Original     		PDF 2SA1020 2SA1680 2SA1145 2SC2655 2SC2482 2SC4408 2SC2705 O-220 2SA1837 2sc4793 npn general purpose transistors application 2sd201

    TD62M8604AF

    Abstract: 2SA1680 HSOP16
    Text: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16 2006-06nt

    Untitled

    Abstract: No abstract text available
    Text: TD62M8604AFG TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AFG 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AFG is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AFG TD62M8604AFG 2SA1680) HSOP16

    TD62M8604AF

    Abstract: 2SA1680 HSOP16
    Text: TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8CH LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip IC incorporates 8 low saturation discrete PNP: 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED display


    Original     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 HSOP16

    LED display module

    Abstract: No abstract text available
    Text: MULTI CHIP BIPOLAR DIGITAL INTEGRATED CIRCUIT TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is M ulti Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 LED display module

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SA1680 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm 5.1 M AX • Low Collector Saturation Voltage : V cE (sat) = - 0 .5 V (Max.) (IC = - 1A) •


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LED


    OCR Scan     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 OU05-15 HSOP16-P-300-1

    13002 FL

    Abstract: No abstract text available
    Text: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This 1C is suitable for a battery use motor drive and LEE


    OCR Scan     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 HSOP16-P-300-1 13002 FL

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TRANSISTOR 2 S A 1 680 SEMICONDUCTOR TOSHIBA TECHNICAL SILICON PNP EPITAXIAL TYPE PCT PROCESS DATA (2SA1680) Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • • • • 5.1 MAX Low Collector Saturation Voltage : VCE(sat)“ —0.5V (Max.) (1^= -1A )


    OCR Scan     		PDF 2SA1680 2SA1680) 900mW 300ns 2SC4408. O-92MOD 2SA1680

    8ch LOW SATURATION DRIVER

    Abstract: HSOP16 2SA1680 TD62M8604AF IN4116
    Text: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI CHIP TD62M8604AF 8ch LOW SATURATION VOLTAGE SOURCE DRIVER The TD62M8604AF is Multi Chip 1C incorporates 8 low saturation discrete PNP : 2SA1680 transistors. This IC is suitable for a battery use motor drive and LEE


    OCR Scan     		PDF TD62M8604AF TD62M8604AF 2SA1680) HSOP16 2SA1680 HSOP16-P-300-1 8ch LOW SATURATION DRIVER 2SA1680 IN4116

    A1680

    Abstract: transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680
    Text: TOSHIBA 2SA1680 TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS. POWER SW ITCHING APPLICATIONS. Unit in mm 5.1 MAX • Low Collector Saturation Voltage : v CE(sat)= - 0 .5 V (Max.) (1^ = -1 A ) • High Collector Power Dissipation : Pg = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. 961001EAA2' A1680 transistor A1680 2sa1680 TRANSISTOR 2SA1680 2SC4408 transistor 2SA1680

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TD62M8604AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT • v ■ V ■ ■ MULTI CHIP * m ■ 8ch LO W SATURATION VOLTAGE SOURCE DRIVER The TD62M 8604AF is M u lti C hip 1C in co rp o ra tes 8 lo w sa tu ra tio n discrete PNP : 2SA1680 transistors.


    OCR Scan     		PDF TD62M8604AF TD62M 8604AF 2SA1680) HSOP16 HSOP16-P-300-1

    Untitled

    Abstract: No abstract text available
    Text: 2SA1680 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 Unit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • 5.1 MAX Low Collector Saturation Voltage : VcE(sat) = -0.5V (Max.) (IC = - 1A) High Collector Power Dissipation : P q = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SA1680 900mW 300ns 2SC4408. 75MAX 961001EAA2'

    A1680

    Abstract: transistor A1680 2SC4408 2SA1680
    Text: TO SH IBA 2SA1680 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 680 POWER AMPLIFIER APPLICATIONS Unit in mm POWER SWITCHING APPLICATIONS 5.1 MAX. • Low Collector Saturation Voltage : V(TE(sat)“ —0.5V (Max.) (If;= —1A) • High Collector Power Dissipation : Pç; = 900mW (Ta = 25°C)


    OCR Scan     		PDF 2SA1680 900mW 2SC4408. 300ns A1680 transistor A1680 2SC4408 2SA1680

    TO-3P

    Abstract: 2SC3303 2sc3783 2sc3233 2sc2562 2sa1329 2sd717 2sc2655 2sb754
    Text: Transistors Industrial use Regulator T ransistors F1 Appli­ cation £ 3 9 Max Rating (Tc=25"C) Type No. V obo{V) VCHO(V) 10(A) Appli­ cation Package Pc(W) TJCO Max Rating (Tc=25*C) Type No. V c b o (V) VCEO(V) Package lc(A) Pc(W) 2SC3075 0.8 10 Power Mold


    OCR Scan     		PDF 2SC3075 2SC3425 2SC3233 2SC507S 2SC4917 O-126 O-220AB T0-220 TO-3P 2SC3303 2sc3783 2sc2562 2sa1329 2sd717 2sc2655 2sb754