2SA193 Search Results

Contextual Info: 2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications • Unit: mm High voltage: VCEO = −600 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −600 V Collector-emitter voltage

2SA1939

Abstract: 2SC5196
Contextual Info: 2SA1939 TO SHIBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X . • • Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. 0 3 .2 ± 0 .2 %

2SA1937

Contextual Info: 2SA1937 TOSHIBA 2 S A 1 937 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : V^ e O = —600 V MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage v CEO

Contextual Info: 2SA1932 SILICON P N P EPITAXIAL T Y P E Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S . D R IV E R ST A G E A M P L IF IE R A P P L IC A T IO N S. • • High Transition Frequency : f'j' = 70MHz Typ. Complementary to 2SC5174 « 7iT M A X I M U M R A T IN G S (Ta = 25°C

Toshiba transistor A1939

Abstract: a1939 2SA1939 2SC5196 40w amplifier
Contextual Info: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristics

c5174

Abstract: 2SA1932 2SC5174
Contextual Info: 2SC5174 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1932 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

A1934

Abstract: 2SA1934
Contextual Info: 2SA1934 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1934 ○ 大電流高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A)

C5174

Abstract: 2SC5174 2SA1932
Contextual Info: 2SC5174 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5174 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 100 MHz 標準 • 2SA1932 とコンプリメンタリになります。

A1932

Abstract: 2SA1932 2SC5174
Contextual Info: 2SA1932 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1932 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 70 MHz 標準 • 2SC5174 とコンプリメンタリになります。

2SA1939

Abstract: 2SC5196 2SC519
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 APPLICATIONS ·Power amplifier applications

Contextual Info: 2SA1933 TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 933 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat)= -0 .4 V (Max.) at I c = -3 A High Speed Switching Time : tg^g= 1.0/is (Typ.)

Contextual Info: TOSHIBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS U nit in mm DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • 01.2 Low Collector Saturation Voltage : v C E ( s a t ) = - ° - 4V (Max.) at I c = - 3 A

Contextual Info: 2SC5174 TO SHIBA 2 S C 5 1 74 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0.2 • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1932 01.2 ~ £r M A X IM U M RATINGS (Ta = 25°C)

Contextual Info: 2SA1932 TOSHIBA 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 i 0 1 .2 High Transition Frequency : frp = 70MHz Typ. Complementary to 2SC5174 M A X IM U M RATINGS (Ta = 25°C)

c5171

Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

2SA1939

Abstract: 2SC5196 T10C
Contextual Info: 2SA1939 TO SH IBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C

A1932

Abstract: transistor 2SA1932 2SA1932 2SC5174
Contextual Info: 2SA1932 TO SH IB A 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 01.2 High Transition Frequency : fx = 70MHz Typ. Complementary to 2SC5174 M A XIM U M RATINGS (Ta=25°C)

2sc5171

Contextual Info: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics

2SA1939

Abstract: 2SC5196
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors DESCRIPTION • With TO-3P l packagc • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage

A1932

Abstract: transistor 2SA1932 2SA1932 2SC5174
Contextual Info: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics

A1931

Abstract: transistor a1931 2SA1931 2SC4881
Contextual Info: 2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT PROCESS 2SA1931 High-Current Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC4881

A1933

Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175
Contextual Info: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)

A1930

Abstract: 2SA1930 2sc5171 2sa1930 2SC5171
Contextual Info: 2SA1930 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1930 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SC5171 とコンプリメンタリになります。

2SA1933

Abstract: 2SC5175 A1933
Contextual Info: 2SA1933 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1933 ○ 大電流スイッチング用 • 単位: mm コレクタ飽和電圧が低い。 : VCE sat = −0.4 V (最大) (IC = −2 A) • スイッチング時間が速い。 : tstg = 1.0 s (標準)