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    2SA193 Search Results

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    2SA193 Price and Stock

    EVVO Semiconductor 2SA1939

    TRANS GP BJT PNP 80V 6A TO-3PN
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    DigiKey 2SA1939 Tube 210 1
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    Toshiba America Electronic Components 2SA1930,Q(J

    TRANS PNP 180V 2A TO220NIS
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    Toshiba America Electronic Components 2SA1931,Q(J

    TRANS PNP 50V 5A TO220NIS
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    Toshiba America Electronic Components 2SA1930(Q,M)

    TRANS PNP 180V 2A TO220NIS
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    EBV Elektronik 2SA1930(Q,M) 26 Weeks 500
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    Toshiba America Electronic Components 2SA1930,CKQ(J

    TRANS PNP 180V 2A TO220NIS
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    2SA193 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA193 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA193 Unknown Cross Reference Datasheet Scan PDF
    2SA193 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA193 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA193 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA193 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1930 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Application Scope: driver; Part Number: 2SC5171 Original PDF
    2SA1930 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1930 Unknown PNP transistor Scan PDF
    2SA1930 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA1930 Toshiba Silicon PNP transistor for power amplifier and driver stage applications Scan PDF
    2SA1930,CKQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 180V TO220-3 Original PDF
    2SA1930,LBS2DIAQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 180V TO220-3 Original PDF
    2SA1930,ONKQ(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 180V TO220-3 Original PDF
    2SA1930,Q(J Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 180V TO220-3 Original PDF
    2SA1930(LBS2MATQ,M Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 180V TO220-3 Original PDF
    2SA1930(ONK,Q,M) Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PNP 2A 180V TO220-3 Original PDF
    2SA1930(Q,M) Toshiba 2SA1930 - TRANS PNP 180V 2A 2-10R1A Original PDF
    2SA1931 Toshiba High-Frequency Switching Power Transistors (2SA Series); Surface Mount Type: N; Package: TO-220NIS; Number Of Pins: 3; Viewing Angle: taping unavailable; Publication Class: High Frequency Switching Power Transistor; Part Number: 2SC4881 Original PDF
    2SA1931 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2SA193 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1937 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1937 High-Voltage Switching Applications • Unit: mm High voltage: VCEO = −600 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −600 V Collector-emitter voltage


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    2SA1937 PDF

    Toshiba transistor A1939

    Abstract: a1939 2SA1939 2SC5196 40w amplifier
    Text: 2SA1939 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1939 Power Amplifier Applications Unit: mm • Complementary to 2SC5196 • Recommend for 40-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings Tc = 25°C Characteristics


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    2SA1939 2SC5196 2-16C1A Toshiba transistor A1939 a1939 2SA1939 2SC5196 40w amplifier PDF

    c5174

    Abstract: 2SA1932 2SC5174
    Text: 2SC5174 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 100 MHz typ. • Complementary to 2SA1932 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SC5174 2SA1932 2-10T1A c5174 2SA1932 2SC5174 PDF

    A1934

    Abstract: 2SA1934
    Text: 2SA1934 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SA1934 ○ 大電流高速スイッチング用 ○ DC-DC コンバータ用 単位: mm • コレクタ飽和電圧が低い。 : VCE (sat) = −0.4 V (最大) (IC = −3 A)


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    2SA1934 2-10T1A 20070701-JA A1934 2SA1934 PDF

    C5174

    Abstract: 2SC5174 2SA1932
    Text: 2SC5174 東芝トランジスタ シリコンNPNエピタキシャル形 2SC5174 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 100 MHz 標準 • 2SA1932 とコンプリメンタリになります。


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    2SC5174 2SA1932 2-10T1A 20070701-JA C5174 2SC5174 2SA1932 PDF

    A1932

    Abstract: 2SA1932 2SC5174
    Text: 2SA1932 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1932 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。: fT = 70 MHz 標準 • 2SC5174 とコンプリメンタリになります。


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    2SA1932 2SC5174 2-10T1A 20070701-JA A1932 2SA1932 2SC5174 PDF

    2SA1939

    Abstract: 2SC5196 2SC519
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1939 DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -2.0V(Min) @IC= -5A ·Good Linearity of hFE ·Complement to Type 2SC5196 APPLICATIONS ·Power amplifier applications


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    2SA1939 2SC5196 2SA1939 2SC5196 2SC519 PDF

    2SA1939

    Abstract: 2SC5196 SC-65
    Text: 2SC5196 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 ! High Current Capability ! High Power Dissipation ! Complementary to 2SA1939 ABSOLUTE MAXIMUM RATING Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage


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    2SC5196 SC-65 2SA1939 2SA1939 2SC5196 SC-65 PDF

    c5171

    Abstract: transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


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    2SC5171 2SA1930 2-10R1A c5171 transistor c5171 2SC5171 2sa1930 transistor equivalent 2SA1930 2sc5171 2SC5171 transistor equivalent 2SA1930 PDF

    2sc5171

    Abstract: No abstract text available
    Text: 2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 200 MHz typ. • Complementary to 2SA1930 Unit: mm Maximum Ratings (Tc = 25°C) Characteristics


    Original
    2SC5171 2SA1930 2-10R1A 2sc5171 PDF

    A1932

    Abstract: transistor 2SA1932 2SA1932 2SC5174
    Text: 2SA1932 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1932 Power Amplifier Applications Driver Stage Amplifier Applications • High transition frequency: fT = 70 MHz typ. • Complementary to 2SC5174 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics


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    2SA1932 2SC5174 2-10T1A A1932 transistor 2SA1932 2SA1932 2SC5174 PDF

    A1931

    Abstract: transistor a1931 2SA1931 2SC4881
    Text: 2SA1931 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT PROCESS 2SA1931 High-Current Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = −0.4 V (max) • High-speed switching time: tstg = 1.0 s (typ.) • Complementary to 2SC4881


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    2SA1931 2SC4881 A1931 transistor a1931 2SA1931 2SC4881 PDF

    A1933

    Abstract: TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175
    Text: 2SA1933 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1933 Industrial Applications High-Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.4 V (max) (IC = −2 A) • High-speed switching time: tstg = 1.0 µs (typ.)


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    2SA1933 2SC5175 A1933 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1933 2SC5175 PDF

    A1930

    Abstract: 2SA1930 2sc5171 2sa1930 2SC5171
    Text: 2SA1930 東芝トランジスタ シリコンPNPエピタキシャル形 2SA1930 ○ 電力増幅用 ○ 励振段電力増幅用 単位: mm • トランジション周波数が高い。fT = 200 MHz 標準 • 2SC5171 とコンプリメンタリになります。


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    2SA1930 2SC5171 SC-67 2-10R1A 20070701-JA A1930 2SA1930 2sc5171 2sa1930 2SC5171 PDF

    2SA1939

    Abstract: 2SC5196
    Text: 2SA1939 TO SHIBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 M A X . • • Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. 0 3 .2 ± 0 .2 %


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    2SA1939 2SC5196 2-16C1A --50mA 100ms« 2SA1939 PDF

    2SA1937

    Abstract: No abstract text available
    Text: 2SA1937 TOSHIBA 2 S A 1 937 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : V^ e O = —600 V MAXIMUM RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage v CEO


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    2SA1937 961001EAA1 2SA1937 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1932 SILICON P N P EPITAXIAL T Y P E Unit in mm P O W E R A M P L IF IE R A P P L IC A T IO N S . D R IV E R ST A G E A M P L IF IE R A P P L IC A T IO N S. • • High Transition Frequency : f'j' = 70MHz Typ. Complementary to 2SC5174 « 7iT M A X I M U M R A T IN G S (Ta = 25°C


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    2SA1932 70MHz 2SC5174 2-10T1A --230V, --10mA, --100mA --500mA, --50mA -500m PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1933 TO SH IB A TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 933 INDUSTRIAL APPLICATIONS U nit in mm HIGH CURRENT SWITCHING APPLICATIONS • Low Saturation Voltage : VCE (sat)= -0 .4 V (Max.) at I c = -3 A High Speed Switching Time : tg^g= 1.0/is (Typ.)


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    2SA1933 2SC5175 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1934 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 934 (2SA1934) HIGH CURRENT SWITCHING APPLICATIONS U nit in mm DC-DC CONVERTER APPLICATIONS 10 ± 0.2 • 01.2 Low Collector Saturation Voltage : v C E ( s a t ) = - ° - 4V (Max.) at I c = - 3 A


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    2SA1934 2SA1934) 2SC5176 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC5174 TO SHIBA 2 S C 5 1 74 TO SHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE Unit in mm DRIVER STAGE AMPLIFIER APPLICATIONS 10 ± 0.2 • • High Transition Frequency : fr=100M H z Typ. Complementary to 2SA1932 01.2 ~ £r M A X IM U M RATINGS (Ta = 25°C)


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    2SC5174 2SA1932 COLLEC97 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1932 TOSHIBA 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 i 0 1 .2 High Transition Frequency : frp = 70MHz Typ. Complementary to 2SC5174 M A X IM U M RATINGS (Ta = 25°C)


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    2SA1932 70MHz 2SC5174 2-10T1A 100ms Ta-25 PDF

    2SA1939

    Abstract: 2SC5196 T10C
    Text: 2SA1939 TO SH IBA 2 S A 1 939 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm 1 5.9 MAX. • • 03.2 ±0.2 Complementary to 2SC5196 Recommend for 40W High Fidelity Audio Frequency Amplifier Output Stage. MAXIMUM RATINGS Ta = 25°C


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    2SA1939 2SC5196 2-16C1A 55transportation 2SA1939 T10C PDF

    A1932

    Abstract: transistor 2SA1932 2SA1932 2SC5174
    Text: 2SA1932 TO SH IB A 2 S A 1 932 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS SILICON PNP EPITAXIAL TYPE Unit in mm DRIVER STAGE AM PLIFIER APPLICATIONS 10 • • ± 0.2 01.2 High Transition Frequency : fx = 70MHz Typ. Complementary to 2SC5174 M A XIM U M RATINGS (Ta=25°C)


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    2SA1932 70MHz 2SC5174 A1932 transistor 2SA1932 2SA1932 2SC5174 PDF

    2SA1939

    Abstract: 2SC5196
    Text: AOK AOK Semiconductor Product Specification 2SA1939 Silicon PNP Power Transistors DESCRIPTION • With TO-3P l packagc • Complement to type 2SC5196 APPLICATIONS • Power amplifier applications • Recommend for 40W high fidelity audio frequency amplifier output stage


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    2SA1939 2SC5196 PDF