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    2SA1971 Price and Stock

    Toshiba America Electronic Components 2SA1971(TE12L,F)

    PB-FREE POWER TRANSISTOR PW-MINI
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    DigiKey 2SA1971(TE12L,F) Digi-Reel 1,010 1
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    2SA1971(TE12L,F) Cut Tape 1,010 1
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    2SA1971(TE12L,F) Reel 1,000 1,000
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    Avnet Americas 2SA1971(TE12L,F) Reel 12 Weeks 1,000
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    Mouser Electronics 2SA1971(TE12L,F)
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    Verical 2SA1971(TE12L,F) 121 39
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    Quest Components 2SA1971(TE12L,F) 227
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    Chip1Stop 2SA1971(TE12L,F) Cut Tape 121
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    ITT Interconnect Solutions DDM-43W2S-A197-143

    Circular MIL Spec Connector
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    Mouser Electronics DDM-43W2S-A197-143
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    Master Electronics DDM-43W2S-A197-143 26
    • 1 $51.76
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    2SA1971 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA1971 Kexin Silicon PNP Triple Diffused Type Original PDF
    2SA1971 TY Semiconductor Silicon PNP Triple Diffused Type - SOT-89 Original PDF
    2SA1971 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA1971 Toshiba Silicon PNP transistor for high voltage switching applications Scan PDF

    2SA1971 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 2SA1971 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1971

    Untitled

    Abstract: No abstract text available
    Text: 2SA1971 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1971

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SA1971 Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO -7 V Collector current


    Original     		PDF 2SA1971 -400VBO -10mA, -100mA -20mA -100mA -10mA -50mA

    Untitled

    Abstract: No abstract text available
    Text: 2SA1971 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1971

    2SA1971

    Abstract: No abstract text available
    Text: 2SA1971 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1971 2SA1971

    2SA1971

    Abstract: No abstract text available
    Text: 2SA1971 東芝トランジスタ シリコンPNP三重拡散形 2SA1971 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SA1971 SC-62 20070701-JA 2SA1971

    2SA1971

    Abstract: No abstract text available
    Text: 2SA1971 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO


    Original     		PDF 2SA1971 2SA1971

    2SA1971

    Abstract: No abstract text available
    Text: Transistors SMD Type Silicon PNP Triple Diffused Type 2SA1971 Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO


    Original     		PDF 2SA1971 -10mA, -100mA -20mA -100mA -10mA -50mA 2SA1971

    2SA1971

    Abstract: No abstract text available
    Text: 2SA1971 東芝トランジスタ シリコンPNP三重拡散形 2SA1971 ○ 高電圧スイッチング用 • 単位: mm 高耐圧です。: VCEO = −400 V 絶対最大定格 Ta = 25°C 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧


    Original     		PDF 2SA1971 SC-62 2SA1971

    2SA1971

    Abstract: 400VIE
    Text: 2SA1971 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1971 High-Voltage Switching Applications • Unit: mm High breakdown voltage: VCEO = −400 V Maximum Ratings Ta = 25°C Characteristics Symbol Rating Unit Collector-base voltage VCBO −400


    Original     		PDF 2SA1971 2SA1971 400VIE

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1971 2 S A 1 971 T O S H IB A TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH V O LTAG E SW ITCHING APPLICATIO NS 1 .6M A X . — J- * 4 .6 M A X . HicrVi Vnlt.ncrp • V m ? = —4-0 0 -V o — “ ö “ • • » - l'i


    OCR Scan     		PDF 2SA1971

    Untitled

    Abstract: No abstract text available
    Text: 2SA1971 T O SH IB A TENTATIVE 2 S A 1 971 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : VCE = -4 0 0 V MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage


    OCR Scan     		PDF 2SA1971 250mm2

    2SA1971

    Abstract: A1971
    Text: TOSHIBA 2SA1971 2 S A 1 971 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : V ç;e = —400V M A X IM U M RATINGS Ta = 25°C SYMBOL RATING CHARACTERISTIC Collector-Base Voltage -400 v CBO Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SA1971 --400V 250mm2X 2SA1971 A1971

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1971 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S A 1 971 HIGH VOLTAGE SWITCHING APPLICATIONS High Voltage : V q e = —400V M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage


    OCR Scan     		PDF 2SA1971 250mm2X0

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SA1971 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 7 <; A 1 Q 7 1 HIGH VOLTAGE SWITCHING APPLICATIONS Unit in mm 1 .6 M A X . 4.6 M A X . Rîo4i V’ n iw * .• v \ ^jJ2 j = _ á n n v' ' “ ö - 1.7MAX. T 0 4 + 0 0'! M A X IM U M RATINGS Ta = 25°C


    OCR Scan     		PDF 2SA1971

    2SA1971

    Abstract: A1971
    Text: 2SA1971 TO SH IBA 2 S A 1 971 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 1.6MAX. —J- * 4.6MAX. HicrVi 0 0 -V o — Vnlt.ncrp “ ö “ •• V• m » - l'i? = —4- 1.7MAX. 0.4 + 0.05


    OCR Scan     		PDF 2SA1971 2SA1971 A1971

    2SA1971

    Abstract: No abstract text available
    Text: 2SA1971 TO SH IBA 2 S A 1 971 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS 1.6MAX. —J- * 4.6MAX. HicrVi Vnlt.ncrp • V m ? = —4 0 0 V o — “ ö “ • • » - l'i 1.7MAX. -


    OCR Scan     		PDF 2SA1971 2SA1971

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266