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    2SA562 Search Results

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    2SA562 Price and Stock

    Micro Commercial Components 2SA562-Y-AP

    TRANS PNP 30V 0.5A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA562-Y-AP Ammo Pack
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    Micro Commercial Components 2SA562-Y-BP

    TRANS PNP 30V 0.5A TO92
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    DigiKey 2SA562-Y-BP Bulk
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    Micro Commercial Components 2SA562-O-AP

    TRANS PNP 30V 0.5A TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SA562-O-AP Ammo Pack
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    Toshiba America Electronic Components 2SA562TM-O

    SMALL SIGNAL BIPOLAR TRANSISTOR, 0.5A I(C), 30V V(BR)CEO, 1-ELEMENT, PNP, SILICON, TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2SA562TM-O 2,304
    • 1 $6.99
    • 10 $6.99
    • 100 $6.99
    • 1000 $3.495
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    Luguang Electronic Technology Co Ltd 2SA562

    Transistor: PNP; bipolar; 30V; 0.5A; 0.5W; TO92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME 2SA562 9,760 20
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    • 100 $0.0256
    • 1000 $0.0204
    • 10000 $0.0183
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    2SA562 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SA562 Transys Electronics Plastic-Encapsulated Transistors Original PDF
    2SA562 Various Russian Datasheets Transistor Original PDF
    2SA562 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2SA562 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SA562 Micro Electronics Semiconductor Device Data Book Scan PDF
    2SA562 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SA562 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SA562 Unknown Scan PDF
    2SA562 Unknown TO-92 Plastic-Encapsulate Transistors Scan PDF
    2SA562 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA562 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SA562 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SA562 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA562 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SA562 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SA562 Unknown Cross Reference Datasheet Scan PDF
    2SA562 Toshiba Japanese Transistor Data Book Scan PDF
    2SA562/G Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SA562-G Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SA562O Bharat Electronics Transistor Selection Guide Scan PDF

    2SA562 Datasheets Context Search

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    2SA562

    Abstract: No abstract text available
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 2SA562 TRANSISTOR PNP 1. EMITTER FEATURES Excellent hFE Linearlity 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


    Original     		PDF 2SA562 -100mA -100mA, -10mA -20mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR（ PNP ） TO—92 FEATURE Power dissipation PCM : 0.5 W（Tamb=25℃） Collector current ICM : -0.5 A Collector-base voltage V BR CBO: -35 V Operating and storage junction temperature range


    Original     		PDF 2SA562 30MHz 270TYP 050TYP

    2SA562

    Abstract: No abstract text available
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562

    Untitled

    Abstract: No abstract text available
    Text: 2SA562 2Plastic-Encapsulate Transistors PNP TO-92 Features Power dissipation PCM : 0.5 W Tamb=25℃ Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃


    Original     		PDF 2SA562 -100mA -100mA, -20mA 30MHz

    2SA562

    Abstract: 2sa562 equivalent transistor 2SA562
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562 2sa562 equivalent transistor 2SA562

    2SC1815 NPN SOT-23

    Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
    Text: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213


    Original     		PDF 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SC1815 NPN SOT-23 ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA562-O 2SA562-Y Features x x x x Excellent h FE Linearlity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1


    Original     		PDF 2SA562-O 2SA562-Y

    Untitled

    Abstract: No abstract text available
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA562TM 2SC1959.

    2SA562TM

    Abstract: 2SC1959 Audio Power Amplifier TOSHIBA
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA562TM 2SC1959. 2SA562TM 2SC1959 Audio Power Amplifier TOSHIBA

    2sa562y

    Abstract: 2SA562-Y
    Text: MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA562-O 2SA562-Y Features x x x x Excellent h FE Linearlity Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1


    Original     		PDF 2SA562-O 2SA562-Y 2sa562y 2SA562-Y

    2SA562 equivalent

    Abstract: 2SA562
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current A ICM : -0.5 Collector-base voltage V (BR) CBO: -35 V


    Original     		PDF 2SA562 -100mA -100mA, -20mA 30MHz 2SA562 equivalent 2SA562

    2SA562TM

    Abstract: 2SC1959
    Text: 2SA562TM シリコンPNPエピタキシャル形 PCT方式 東芝トランジスタ 2SA562TM ○ 低周波小電力増幅用 ○ 励振段増幅用 ○ スイッチング用 • 単位: mm 電流増幅率の電流依存性が優れています。 : hFE (2) = 25 (最小), (VCE = −6 V, IC = −400 mA)


    Original     		PDF 2SA562TM 2SC1959 SC-43 2SA562TM 2SC1959

    Untitled

    Abstract: No abstract text available
    Text: 2SA562 PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearlity G  Emitter  Collector  Base H J A REF. D A B C D E F G H J K B K


    Original     		PDF 2SA562 -100mA -20mA 29-Apr-2010

    2SA562TM

    Abstract: 2SA56 2SC1959 200 watt audio amplifier ic
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA


    Original     		PDF 2SA562TM 2SC1959. 2SA562TM 2SA56 2SC1959 200 watt audio amplifier ic

    2SA562TM

    Abstract: 2SC1959
    Text: 2SA562TM TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA562TM Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications • Excellent hFE linearity: • 1 watt amplifier application. • Complementary to 2SC1959.


    Original     		PDF 2SA562TM 2SC1959. 2SA562TM 2SC1959

    2SA562

    Abstract: transistor 2SA562
    Text: ST 2SA562 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SA562 100mA 400mA 100mA, 2SA562 transistor 2SA562

    2SA562

    Abstract: 2SA562 equivalent f-30MHz transistor 2SA562
    Text: 2SA562 2SA562 TRANSISTOR PNP TO-92 FEATURE Power dissipation PCM : 0.5 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃


    Original     		PDF 2SA562 -100mA -100mA, -20mA 30MHz 2SA562 2SA562 equivalent f-30MHz transistor 2SA562

    2sa1015

    Abstract: 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930
    Text: - 8 - m % Type No. 2SA 549A 2SA 550 ^ 2SA 550A 2SA 551 2SA 552 2SA 553 2SA 554 2SA 555 2SA 556 2SA 557 2SA 558 2SA 559 2SA 559A 2SA 560#^ 2SA 561 ^ 2SA 562 % Manuf. B ÍL fâ fâ H B T T £ C î¥ 36 2Ê TOSHIBA 2SA984 2SA562 2SA1015 B a NEC B Al HITACHI 2SA778AK


    OCR Scan     		PDF 2SA778AK 2SA1309A 2SA562 2SA673 2SA933 2SA984 2SA1015 2sa1015 2SA673 2SA935 2sa733 2SA562 564a 2SA572 2SA933 2SA953 2SA930

    2SA562

    Abstract: transistor 2SA562
    Text: VI cc TO-92 P lastic-E n capsu iate T ran sisto rs 2SA562 TRANSISTOR NPN FE ATURES P cm : 0.5W (Tamb=25°C) Icm : -0.5 A É ü li lÉ É y ftMie voltage V(8R)CBO: -35 V storage junction temperature range Tj.Tsig: -55°C to + 150“C ELECTRICAL CHARACTERISTICS


    OCR Scan     		PDF 2SA562 30MHz 25min 40min 2SA562 transistor 2SA562

    2SA562TM

    Abstract: 2SC1959
    Text: TOSHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS • Excellent hjpg Linearity. hpE (2) = 25 (Min.) at VqE = —6V, Iq = —400mA


    OCR Scan     		PDF 2SA562TM -400mA 2SC1959. 2SA562TM 2SC1959

    2SA562TM

    Abstract: 2SC1959
    Text: TO SH IBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 MAX. SWITCHING APPLICATIONS .n. Excellent hEE linearity. UJ?'E (2) ”


    OCR Scan     		PDF 2SA562TM 400mA 2SC1959. 2SA562TM 2SC1959

    2SA562TM

    Abstract: No abstract text available
    Text: TOSHIBA 2SA562TM 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY LO W PO W ER AM PLIFIER APPLICATIONS DRIVER STAGE AM PLIFIER APPLICATIONS 5.1 M AX. SWITCHING APPLICATIONS • Excellent hpE Linearity. hFE (2) = 25 (Min.) at V cE = —6V, I c = -400m A


    OCR Scan     		PDF 2SA562TM -400m 2SC1959. 2SA562TM

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SA562TM TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SA562TM Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS . 5.1 M AX. SWITCHING APPLICATIONS • Excellent hpE Linearity. hpE (2) - 2 5 (Min.) at V q E = -6 V , I q = —400mA


    OCR Scan     		PDF 2SA562TM 400mA 2SC1959.