2SB0968 Search Results

2SB0968

Abstract: 2SB968 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

2SB0968

Abstract: 2SB968 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 ue pl d in an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For low-frequency output amplification Complementary to 2SD1295 • Package ■ Features

2SB0968

Abstract: 2SD1295
Contextual Info: Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.8 max. 2.5±0.1 • Possible to solder radiation fin directly to printed circuit board • Output of 4 W can be obtained by a complementary pair with 2SB0968 0.5±0.1 1.8±0.1 7.3±0.1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package ■ Features • Possible to solder radiation fin directly to printed circuit board

2SB0968

Abstract: 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB0968 6.5±0.1 5.3±0.1 4.35±0.1 0.8 max. 1.8±0.1 0.75±0.1 2.3±0.1

2SB0968

Abstract: 2SB968 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB0968 (2SB968) Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 Unit: mm 2.3±0.1 0.8 max. 2 1 • Absolute Maximum Ratings Ta = 25°C

pc 2501

Abstract: 2SB0968 2SB968 2SD1295
Contextual Info: Power Transistors 2SB0968 2SB968 Silicon PNP epitaxial planar type For low-frequency output amplification Complementary to 2SD1295 Unit: mm 2.3±0.1 0.8 max. 2 1 • Absolute Maximum Ratings Ta = 25°C 3 0.75±0.1 2.3±0.1 Symbol Rating Unit VCBO −50 V

2SB0968

Abstract: 2SD1295
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.75±0.1 2.3±0.1 (5.3) (4.35) (3.0) 4.6±0.1 • Absolute Maximum Ratings TC = 25°C Unit 50 V Collector-emitter voltage (Base open)

MIP2F3

Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

ma3df25

Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Contextual Info: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

2sc5929

Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm • Features 0.75±0.1 2.3±0.1 4.6±0.1 Symbol Rating Unit VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open)

K 2411

Abstract: k2411 IX 3354 a699a 3SK2411 2Sa1950 T092L 2SB0774 3SK271 c 5019
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (N o.) Band Appli­ cation T O -9 2 N ew S Type (0 3 4 ) (D 46) M Type (D 35) SS-M ini Type S-Mini Type S-Mini Type Mini Type

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

A1534

Abstract: T092 2SB642 T092L 2SB0774 SS-Mini 3 2SA1495 2SB946 2SA1124 A1534A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) A Tentative ( : Com plem entary pair Panasonic 125 Part Number List ■ Discrete Devices Old Part Nos | New Part Nos [ Package Sym bol 1 SS Mini 3P: SS-Mini 3-pin

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1295 Silicon NPN epitaxial planar type Unit: mm 0.8 max. 2.5±0.1 • Possible to solder radiation fin directly to printed circuit board • Output of 4 W can be obtained by a complementary pair with

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

mip411

Abstract: MIP2F4 MIP2F3 AN12947a mip2f2 MIP2F20MS MIP2F40MS mip2e7dmy panasonic inverter dv 700 manual mip291
Contextual Info: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the

2SC5224

Abstract: 2SA1949 2SB1573 2SD2407 A1534A 2SB0774 2SB1576 2SB946 T0-92N 2SA1951
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions U Type (D36) TO-126 (D49 * , D50) MT3 Type (D40) MT4 Type (D41) TO-202 (D51) T0-220(a) (D52) TO-220F (D55) 2SC1398A