2sB1237 transistor
Abstract: 2SB1237 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100
Text: 2SB1132 / 2SA1515S / 2SB1237 Transistors Medium Power Transistor −32V,−1A 2SB1132 / 2SA1515S / 2SB1237 zExternal dimensions (Unit : mm) 2SB1132 4+ − 0.2 1.0 + − 0.2 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2
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2SB1132
2SA1515S
2SB1237
2SB1132
SC-62
15Min.
SC-72
2sB1237 transistor
2SB1237
2SD1664
2SD1858
SC-72
T100
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
OT-89
O-252
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2SB1132G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA/-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
2SB1132L-x-TN3-T
2SB1132G-x-TN3-T
OT-89
2SB1132G
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132G-x-AB3-R
OT-89
2SB1132G-x-AL3-R
OT-323
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
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2SB1237
Abstract: 2SA1515S 2SB1132 2SD1664 2SD1858 SC-72 T100 2SB1132-QR
Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +
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2SB1132
2SA1515S
2SB1237
2SB1132
2SA1515S
65Max.
SC-72
SC-62
R0039A
2SB1237
2SD1664
2SD1858
SC-72
T100
2SB1132-QR
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2sb1132
Abstract: 2SB1132-Q
Text: MCC TM Micro Commercial Components Features 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# x Case Material: Molded Plastic. Classification Rating 94V-0
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2SB1132
2SB1132-P
2SB1132-Q
2SB1132-R
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2SB1132Q
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1132 2SB1132-P 2SB1132-Q 2SB1132-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1
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2SB1132
2SB1132-P
2SB1132-Q
2SB1132-R
2SB1132Q
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2SB1132
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES 1 * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) TO-252 *Pb-free plating product number: 2SB1132L
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2SB1132
OT-89
2SB1132
-500mA/-50mA)
O-252
2SB1132L
2SB1132-x-AB3-R
2SB1132L-x-AB3-R
2SB1132-x-TN3-R
2SB1132L-x-TN3-R
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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Original
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
OT-89
O-252
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •
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2SB1132-P
2SB1132-Q
2SB1132-R
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rohm 2sd1664
Abstract: No abstract text available
Text: Medium Power Transistor 32V,1A 2SB1132 / 2SA1515S / 2SB1237 2SB1132 2SA1515S 4+ − 0.2 1.5 +0.2 −0.1 (1) 0.4 + − 0.1 1.5 + − 0.1 (2) (3) 0.4 +0.1 −0.05 0.5 + − 0.1 0.4 0.1 1.5 + − 0.1 3.0 + − 0.2 5 Abbreviated symbol: BA (2) 14.5 +
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2SB1132
2SA1515S
2SB1237
2SB1132
2SA1515S
65Max.
SC-72
R1102A
rohm 2sd1664
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES *Low VCE sat . VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) 1 TO-252 1: BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
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2SB1132
2SB1132
-500mA/-50mA)
O-252
100ms
QW-R209-012
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
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2SB1132
2SB1132
-500mA/-50mA)
OT-89
100nt
QW-R208-016
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PDF
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1132 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *Low VCE sat .VCE(sat)= -0.2V(Typ)(Ic/IB= -500mA/-50mA) SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
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2SB1132
2SB1132
-500mA/-50mA)
OT-89
100ms
QW-R208-016
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transistor marking BAR
Abstract: 2SB1132 MARKING BAQ
Text: 2SB1132 2SB1132 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 0.5 W (Tamb=25℃) 1 2 3. EMITTER Collector current ICM: -1 A Collector-base voltage V V(BR)CBO: -40 Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃
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2SB1132
OT-89
-100mA
-500mA,
-50mA
-50mA,
30MHz
transistor marking BAR
2SB1132
MARKING BAQ
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features x Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1
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Original
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2SB1132-P
2SB1132-Q
2SB1132-R
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •
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2SB1132-P
2SB1132-Q
2SB1132-R
OT-89
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 2SB1132-P 2SB1132-Q 2SB1132-R omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates • •
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2SB1132-P
2SB1132-Q
2SB1132-R
OT-89
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PDF
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2SB1132
Abstract: 2SB1237 2SA1515S 2SD1858 transistor pnp 1a 2sB1237 transistor "Power transistor" data sheet transistor PNP 2SD1664 2SB1132 transistor
Text: Transistors Medium Power Transistor *32V, *1A 2SB1132 / 2SA1515S / 2SB1237 FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = –500mA / –50mA) 2) Compliments 2SD1664 / 2SD1858. FExternal dimensions (Units: mm) FStructure Epitaxial planar type
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2SB1132
2SA1515S
2SB1237
500mA
2SD1664
2SD1858.
96-120-B12)
2SB1237
2SD1858
transistor pnp 1a
2sB1237 transistor
"Power transistor"
data sheet transistor PNP
2SB1132 transistor
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transistor Ic 1A datasheet NPN
Abstract: 2SD1858 2SD1664 NPN Silicon Epitaxial Planar Transistor Transistor d12 Transistor 2SD1858 2SB1237 2sb123 NPN Transistor Characteristics Silicon NPN Epitaxial Planar Power Transistor
Text: Transistors Medium Power Transistor 32V, 1A 2SD1664 / 2SD1858 FFeatures 1) Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA / 50mA) 2) Complements the 2SB1132 / 2SB1237. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor
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2SD1664
2SD1858
500mA
2SB1132
2SB1237.
96-207-D12)
transistor Ic 1A datasheet NPN
2SD1858
NPN Silicon Epitaxial Planar Transistor
Transistor d12
Transistor 2SD1858
2SB1237
2sb123
NPN Transistor Characteristics
Silicon NPN Epitaxial Planar Power Transistor
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Untitled
Abstract: No abstract text available
Text: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available In MPT3 (MPT, SC-62) package • package marking: 2SB1132; BA*-, where ★ is hFE code 2SB1132 (MPT3) • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB) • low collector saturation voltage,
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OCR Scan
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2SB1132
SC-62)
2SB1132;
2SD1664
2SB1132
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Untitled
Abstract: No abstract text available
Text: 2SB1132 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT, SC-62) package • package marking: 2SB1132; B A *, where ★ is hFE code 2SB1132 (MPT3) . , +0.2 *•5—0.1 1.6±0.1 • Pc = 2 W (when mounted on 40 x 40 x 0.7 mm ceramic PCB)
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OCR Scan
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2SB1132
SC-62)
2SB1132;
2SD1664
D0147DD
147D2
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d1664
Abstract: Transistor 1501 2sb1237
Text: Transistors Medium Power Transistor -32V, -1A 2SB1132/2SA1515S/2SB1237 •F e a tu re s 1) • E x te rn a l dim ensions (Units: mm) LOW VcE(satl. VcE(sat) = - 0 .2 V (Typ.) 2SA1515S 2SB1132 4 S+0.2 (Ic /le = -5 0 0 m A /- 5 0 m A ) 5 - 0.1 16 2) C om plim ents 2S D 1664/2S D 1858.
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OCR Scan
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2SB1132/2SA1515S/2SB1237
2SB1132
2SA1515S
1664/2S
SC-72
SC-62
2SB1237
2SB1132)
d1664
Transistor 1501
2sb1237
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Untitled
Abstract: No abstract text available
Text: h "7 > V 7. $ /Transistors 2SB1132 I PNP '> U = i > h 7 > y X ^ 4 |it:fr*iilflffl/M ed iu m Power Amp. Epitaxial Planar PNP Silicon Transistor • « ft 1 P c = 2 W ? - £ > 3 4 0 X 4 0 X 0 . 7m m -tz Dimensions (Unit : mm) 7 sù->J V' V 'v j i v • 2SB1132
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OCR Scan
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2SB1132
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