2SB1187
Abstract: 2SD1761
Text: Inchange Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS
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2SB1187
O-220Fa
2SD1761
2SB1187
2SD1761
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2SB1187
Abstract: 2SD1761 2sb118
Text: SavantIC Semiconductor Product Specification 2SB1187 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1761 ·Excellent DC current gain characteristics ·Wide safe operating area APPLICATIONS
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2SB1187
O-220Fa
2SD1761
2SB1187
2SD1761
2sb118
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2SB1187
Abstract: 2SD1761 Silicon Power Transistors
Text: Product Specification www.jmnic.com 2SB1187 Silicon Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power
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2SB1187
O-220Fa
2SD1761
O-220Fa)
2SB1187
2SD1761
Silicon Power Transistors
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2SD1761
Abstract: 2SB1187 2sb118
Text: Inchange Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
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2SD1761
O-220Fa
2SB1187
O-220Fa)
2SD1761
2SB1187
2sb118
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2SD1761
Abstract: 2SB1187
Text: JMnic Product Specification 2SB1187 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220Fa package ・Low saturation voltage ・Complement to type 2SD1761 ・Excellent DC current gain characteristics ・Wide safe operating area APPLICATIONS ・For low frequency power
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2SB1187
O-220Fa
2SD1761
2SD1761
2SB1187
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2SD1761
Abstract: 2SB1187
Text: SavantIC Semiconductor Product Specification 2SD1761 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·Low collector saturation voltage ·Complement to type 2SB1187 ·Wide safe operating area APPLICATIONS ·For low frequency power amplifier applications
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2SD1761
O-220Fa
2SB1187
O-220Fa)
2SD1761
2SB1187
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2SB1187
Abstract: 2SB1187 transistor 2SD1761
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1187 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD1761 APPLICATIONS ·Designed for low frequency power amplifier applications.
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2SB1187
2SD1761
2SB1187
2SB1187 transistor
2SD1761
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2SD1761
Abstract: 2SB1187
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors 2SD1761 TRANSISTOR NPN TO-220F 1. BASE FEATURES z Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A z Excellent current characteristics of DC current gain.
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O-220F
2SD1761
O-220F
2SB1187
2SD1761
2SB1187
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2sd1761
Abstract: No abstract text available
Text: 2SD1761 NPN TO-220F Bipolar Transistors TO-220F 1. BASE 2. COLLECTOR 1 2 3. EMITTER 3 Features Low collector saturation voltage: Vce(sat)=0.3V(Typ.),IC/IB=2A/0.2A Excellent current characteristics of DC current gain. Large collector power dissipation: PC=30W(TC=25℃)
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2SD1761
O-220F
O-220F
2SB1187
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2N109
2N1304
2N1305
2N1307
2N1613
2N1711
2N1893
2N2102
2N2148
2N2165
TRANSISTOR DATASHEET D1555
d1555 transistor
TRANSISTOR D1651
D1555
D1557
D1554
d1651
transistor s1854
transistor d1555
transistor d1878
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alternator diode 1776 B
Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)
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Hig86-755-3679515
alternator diode 1776 B
2az marking transistor sot-23
SMD SOT23 transistor MARK Y2
ic mb4213
NEC 12F triac
F10P048
ktc3114 equivalent
SMD TRANSISTOR MARKING 02N
DIODE PJ 57 ss14
BC517 equivalent
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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MB4213
Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors
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SSIP-12
KIA6283K
KIA7217AP
SSIP-10
KIA6240K
KIA6801K
KIA6901P/F
MB4213
F10P048
mn1280
mb4213 equivalent
smd transistor zaa
diode zener ZD 15
ic mb4213
transistor 2AX SMD
252 B34 SMD ZENER DIODE
bc237 equivalent SMD
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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2SB1187
Abstract: 2SD1761 2SB1187 transistor
Text: ROHM CO LTD - 4QE D 7 A 2 A CH C] ODDSSfll $ / T ransistors h "7 > v 2SB1187 T '-3 '1 -Icl ' 2SB1137 3 HRHM l& J ljjS lt^ iiiiiffl/L o w Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • W fiT H iH /D im e n s io n s U n it: mm • 1) Pc = 3 0 W (T c = 2 5 ”C)
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2SB1187
2SD1761t
2SD1761.
O-22QFP
2SD1761
2SB1187 transistor
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2SB1187
Abstract: 2SB1187 transistor 2SD1761
Text: h7 > y 2 S /Transistors B 1 1 8 2SB1187 7 '> u = i> 1BJiil£1t:fr^1iffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistor • f t f f M & H / D im e n s io n s U n it: mm Si >4 V; v \J l-7- • tftjk 1) Pc = 3 0 W (T c = 2 5 "C ) 2) A S O A ^ jK l'o
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2SB1187
2SD1761
2SD1761.
2SB1187
2SB1187 transistor
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2SB1335A
Abstract: 2SD2037 2SD2033 2SD2061 28c43 2sb1357 2SB1359 2sd2041 2SD2096 2SD1856
Text: BSE D ROHM CORP Tr T ä S a n T Q O O S TQ Ì 7 Transistors 11 GaAs Dual-Gate MES FETs Type 3SK 212 Function Absolute Maximum Ratings Ta=25°C Dimensions (Unit: mm) Electrical Characteristics (Ta=25°C) Vos(V) lo(mA) PD(mW) Tch(°C) NF(dB) PG(dB) f(MHz)
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3SK212
O-220,
O-220FP,
2SD1562
2SB1085
2SD1763
2SB1186
2SD2033
2SB1353
2SD1562A
2SB1335A
2SD2037
2SD2061
28c43
2sb1357
2SB1359
2sd2041
2SD2096
2SD1856
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2SB1187
Abstract: 2SD1761 2SB1187 transistor
Text: ROHM CO LTD 4QE D 7 0 2 0 ^ QDQS^Sö 2 E 3 RHM h ÿ > > !Z $ / I ransistors 2SD1761 7 fS 2 -ö 9 E.MfàËky'l'-J-M NPN y ' J - 2SD1761 lÊ ü iî& lilf r iiÎIf fl/L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • f t f t ^ t jil il/ D i m e n s io n s U nit : mm
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2SD1761
2SB1187
2SB1187.
2SD1761
2SB1187 transistor
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2sd1761
Abstract: No abstract text available
Text: > v 7, $ / T ransistors S 2SD1761 '> u = i> npn t£ J i It if tiitlffl/ L o w Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • \ t ' ; £ 0 / Dimenslons U n it: mm 1) VcE ( sa t ) = 0.3V (Typ.) ir f f i l 'o (at Ic / I b =2A /0.2A ) 2)
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2SD1761
2SB1187.
2sd1761
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2sd2061
Abstract: No abstract text available
Text: h 7 > y X $ /Transistors 2SD2061 2SD2061 NPN ' > U = I > h 7 > ' / 7 $ 1K;Jl}j£lt:ft*^lllIff l/L o w Freq. Power Amp. • • <8* vryjv';V^J'^ Triple Diffused Planar NPN Silicon Transistor \j">i /Dim ensions Unit: mm 1) V c e (sat) VcE(sat)=0.3V (Typ.)
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2SD2061
2SB11871
2sd2061
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2sd2061
Abstract: No abstract text available
Text: 40E ROHM CO L T ]> 7020^=1 » 0Q0b037 h "7 > v 7> $ /'Tran sistors IRHM 7 2SD 2061 7 ^ 3 3 -0 9 I S 1 “ • NP N h - 7 > v X ^ • ttft V^JViV^I'T Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • Wfé'ÎîÉISI/Dimensions Unit: mm 1) VcE (sat)
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0Q0b037
O-220FP
2SD2061
HU-72-I
2sd2061
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2SD2010
Abstract: 2SD2008 2SD2006 2Sb1333 2SD947 2SB1328 J0801 2SD2005 2SD2004 2SB1330
Text: ROHM CORP DE 1 7 ñ 2 ñ cm □1 Tr □ □ □ llS 'ì 7 I D 7 “-2 . 9 > _ o / LU 1 • TO-92L Types Í* * New Products ☆ Under Development Type 2SC3269 Function. Chroma Driver • -100 *2SB1256 High Voltage Switching fc A - , • 0.1 pc ( w r 0.75 .ir (MHz')
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17fl2Ã
O-92L
2SC3269
2SB1256
1K-10K
2SD1809
2SD1929
2SD2010
2SD2008
2SD2006
2Sb1333
2SD947
2SB1328
J0801
2SD2005
2SD2004
2SB1330
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2SD1966
Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Text: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5
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2SA785
2SA790
2SA790M
2SA806
2SA821
2SA825
2SA825S
2SA83Û
2SA830S
2SA854
2SD1966
2SD1255M
2SB maintenance
IMB6
2SC2808
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transistor A1515
Abstract: Transistor 2SA 2SB 2SC 2SD d2172 a1515 transistor transistor D1292 h7195 rkm 34 transistor C1741A IC TB 1238 AN transistor b1184
Text: Explanations • Standard Products, Semi-standard Products, Custom Products To make it easier for the customer to select the type of product best suited to his needs, we offer transistors, diodes, light-emitting diodes sensors, lasers diodes, and resistors in three types: 1 standard, (2) semi-standard, and
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MCR01
transistor A1515
Transistor 2SA 2SB 2SC 2SD
d2172
a1515 transistor
transistor D1292
h7195
rkm 34 transistor
C1741A
IC TB 1238 AN
transistor b1184
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