2SB1193
Abstract: 2SD1773
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm 10.0±0.2 4.2±0.2 5.5±0.2 Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current
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2002/95/EC)
2SB1193
SC-67
O-220F-A1
2SB1193
2SD1773
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2SB1193
Abstract: 2SD1773
Text: Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1773
2SB1193
2SB1193
2SD1773
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2SD1773
Abstract: 2SB1193
Text: SavantIC Semiconductor Product Specification 2SD1773 Silicon NPN Power Transistors DESCRIPTION •With TO-220Fa package ·DARLINGTON ·Complement to type 2SB1193 ·High speed switching APPLICATIONS ·For medium speed switching applications PINNING PIN DESCRIPTION
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2SD1773
O-220Fa
2SB1193
O-220Fa)
2SD1773
2SB1193
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2SB1193
Abstract: 2SD1773
Text: JMnic Product Specification 2SB1193 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1773 APPLICATIONS ・For medium speed switching applications PINNING
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2SB1193
O-220Fa
2SD1773
O-220Fa)
-80mA
-120V;
-100V;
2SB1193
2SD1773
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IC103-10
Abstract: 2SB1193 2SD1773
Text: Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw • Absolute Maximum Ratings TC = 25°C
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2SB1193
IC103-10
2SB1193
2SD1773
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
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2002/95/EC)
2SB1193
2SD1773
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2SB1193
Abstract: 2SD1773
Text: Power Transistors 2SD1773 Silicon NPN triple diffusion planar type Darlington For midium speed switching Complementary to 2SB1193 Unit: mm ● 0.7±0.1 • Absolute Maximum Ratings Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage
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2SD1773
2SB1193
2SB1193
2SD1773
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2SB1193
Abstract: 2SD1773 pnp 4A switching
Text: SavantIC Semiconductor Product Specification 2SB1193 Silicon PNP Power Transistors DESCRIPTION •With TO-220Fa package ·High DC current gain ·High speed switching ·DARLINGTON ·Complement to type 2SD1773 APPLICATIONS ·For medium speed switching applications
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2SB1193
O-220Fa
2SD1773
O-220Fa)
-80mA
-120V;
-100V;
2SB1193
2SD1773
pnp 4A switching
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2SB1193
Abstract: 2SD1773
Text: Inchange Semiconductor Product Specification 2SB1193 Silicon PNP Power Transistors DESCRIPTION ・With TO-220Fa package ・High DC current gain ・High speed switching ・DARLINGTON ・Complement to type 2SD1773 APPLICATIONS ・For medium speed switching applications
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2SB1193
O-220Fa
2SD1773
O-220Fa)
-80mA
-120V;
-100V;
2SB1193
2SD1773
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1193 Silicon PNP epitaxial planar type darlington Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw
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2002/95/EC)
2SB1193
2SD1773
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2SC429GTM
2SC458
2SC458LG
2SC503
2SC504
2SC510
2SC512
2SC519
2SC520A
2SC594
sn76131
tlo72cp
TOSHIBA 2N3055
M53207P
2N3055 TOSHIBA
KIA7313AP
kia7640ap
LA5530
M5L8155P
TBB1458B
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1773 Silicon NPN triple diffusion planar type darlington Unit: mm 4.2±0.2 φ 3.1±0.1 14.0±0.5 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 120
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2002/95/EC)
2SD1773
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2SB1193
Abstract: 2SD1773 RELAY MATSUA
Text: Power Transistors 2SD1773 Silicon NPN triple diffusion planar type darlington Unit: mm 14.0±0.5 • High forward current transfer ratio hFE • High-speed switching • Full-pack package which can be installed to the heat sink with one screw • Absolute Maximum Ratings TC = 25°C
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2SD1773
2SB1193
2SB1193
2SD1773
RELAY MATSUA
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SB1.193 2SB1193 Silicon PNP Epitaxial Planar Darlington Type Medium Speed Switching Complementary Pair with 2SD 1773 Package Dimensions U n it : mm 4.4m ax. 10.2m ax. 5.7m ax. 2.9 max. • Features • H igh DC c u r r e n t gain Iife
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2SB1193
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Untitled
Abstract: No abstract text available
Text: Power Transistors 2SD1773 2SD1773 Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Switching Complementary Pair with 2SB1193 • Package Dimensions U n it ' mm 4.4m ax. 1 0 .2 m a x . ■ Features 5 .7 m a x . 2.9 max • H ig h D C c u r r e n t g ain Iife
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2SD1773
2SB1193
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2SB1193
Abstract: 2SD1773 500C
Text: Power Transistors 2SB1.193 2SB1193 Silicon P N P Epitaxial P lanar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2SD 1773 U n it ! mm 4 4m ax. 10.2m ax. 5.7m ax. • 2.9 max. • Features • High DC current gain I i f e
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2SB1193
2SD1773
2SB1193
2SD1773
500C
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2SB1193
Abstract: 2SD1773
Text: Power Transistors 2SD1773 2SD1773 Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Switching Complementary Pair with 2SB1193 • Features • H igh DC c u r re n t gain ■ Package Dimensions 2.9 max Iif e • High s p e e d sw itch in g
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2SD1773
2SB1193
O-220
Vcc-50V
2SB1193
2SD1773
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2SD1761
Abstract: 2sb1216 2SB1220 2sb118 2SB1187 2SB1204 2SD1812 2SB1184 2SB1208 2SB1188
Text: - 80 - Ta=25'C, *EP(älc=25cC 2SB1184 2SB1184F5 2SB1185 2SB1186 2SB1186A 2SB1187 2SBU88 2SB1189 2SBU90 2SBU90A 2SB1191 2SB1191A 2SB1192 2SB1192A 2SB1193 2SB1194 2SB1201 2SB1202 2SB1203 2SB1204 2SB1205 2SB1206 2SB1207 2SB1208 2SB1209 2SB1212 2SB1214 2SB1215
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2SB1184
2sb1184f5
2SBU85
2SB1186
2sb1186a
2sb1187
2SB1188
2SB1209
2SD1812
SC-51
2SD1761
2sb1216
2SB1220
2sb118
2SB1204
2SB1208
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Darlington pair IC high current
Abstract: 2SB1193 2SD1773
Text: Power Transistors 2SBM93 2SB1193 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Medium Speed Switching Complementary Pair with 2SD1773 • Features U n i t ! mm 4 .4 m a x . 1 0 .2 m a x 5 .7 m a x . 2.9m ax. • High DC current gain Ii f e
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2SBM93
2SB1193
2SD1773
Darlington pair IC high current
2SB1193
2SD1773
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2SB1547
Abstract: 2SB1301 1409L 2SB1193 2SA1719 hitachi 2sb 1391 2SB1226 2SB1255 2SB1335 2SA1718
Text: - tt m « Type No. ! SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2SB 2 SB 1388 13 89 1390 1391 1392 1393 ¡394 1395 , 1396 1397 « Manuf. a a B a it it ÍL fâ T H = H = H ft SANYO 2SB1223 2SB1224 2SB1228 2SA1469 2SB1133 ft ft ft ft B TOSHIBA 2SB1UÜU 2SB1024 2SB1022 2SB1020
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ZSB113Ã
2SB1223
2SB1024
2SA1718
2SB950
2SB1342
2SB1224
2SB1022
2SA1719
2SB1464
2SB1547
2SB1301
1409L
2SB1193
2SA1719
hitachi 2sb 1391
2SB1226
2SB1255
2SB1335
2SA1718
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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B1548
Abstract: 2SB1299A
Text: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200
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T0-220
O-220F
2SB954/A
2SB1052
2SD1480
2SD1265/A
O-220E
T0220D
2SB1169/A
2SB1170
B1548
2SB1299A
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2sd2520
Abstract: 2SD2501 2SD2502 2sD2503 2SD1327 2SD1755
Text: Transistors Selection Guide by Applications and Functions •Silicon Power Transistors (continued) Applica tion Func tions V ceo (V) lc (A) Package (No.) VcE(sat) typ. (V) lc Ib TO-220(a) (D52) T0-220F(D55) T0-220E(D59) T0-220D(D58) N Type (D42) PNP
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O-220
T0-220F
T0-220E
T0-220D
2SD1719
2SD1775/A
2SD1755
2SB1195
2SD1634
2SD1336/A
2sd2520
2SD2501
2SD2502
2sD2503
2SD1327
2SD1755
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