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    2SB1243 TRANSISTOR Search Results

    2SB1243 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SB1243 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: Data downloaded from http://www.angliac.com - the website of Anglia - tel: 01945 474747 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1


    Original     		PDF 2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. 2SB1184) 2SB1243 2SD1864

    2SB1184 SC-63

    Abstract: 2SB1184 2SB1243 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter


    Original     		PDF 2SB1184 2SB1243 2SB1184 2SB1184) 2SB1243) 2SB1184 SC-63 2SB1243 2SD1760 2SD1864

    2SB1243

    Abstract: 2SB1184 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 2.3 +0.2 −0.1 C0.5 2.5±0.2 6.8±0.2 0.55±0.1 2.3±0.2 2.3±0.2 (1) 1.05 (1) Base (2) Collector (3) Emitter


    Original     		PDF 2SB1184 2SB1243 2SB1184 2SB1184) 2SB1243) 2SB1243 2SD1760 2SD1864

    Untitled

    Abstract: No abstract text available
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure


    Original     		PDF 2SB1184 2SB1243 2SD1760 2SD1864. 2SB1184 65Max. SC-63

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 zExternal dimensions (Unit : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 zStructure


    Original     		PDF 2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. SC-63 2SB1243 2SD1864

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: 2SB1184 / 2SB1243 Transistors Power Transistor −60V, −3A 2SB1184 / 2SB1243 !External dimensions (Units : mm) 2SB1243 6.5±0.2 5.1 +0.2 −0.1 C0.5 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 !Structure


    Original     		PDF 2SB1184 2SB1243 65Max. 2SB1184 2SD1760 2SD1864. SC-63 2SB1243 2SD1864

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864 2SB1184 SC-63
    Text: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


    Original     		PDF 2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R0039A 2SB1243 2SD1864 2SB1184 SC-63

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 60V, 3A 2SB1243 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 2) Complements the 2SD1864. 2SB1243 2.5±0.2 0.65Max. 4.4±0.2 0.5±0.1 (1) (2) 14.5±0.5 Structure Epitaxial planar type


    Original     		PDF 2SB1243 2SD1864. 65Max. R1010A

    2SB1243

    Abstract: 2SB1184 2SD1760 2SD1864
    Text: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


    Original     		PDF 2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R1010A 2SB1243 2SD1864

    2SB1184

    Abstract: 2SB1243 2SD1760 2SD1864
    Text: Power Transistor -60V, -3A 2SB1184 / 2SB1243 Dimensions (Unit : mm) 2SB1184 2SB1243 2.3 +0.2 −0.1 0.5±0.1 0.55±0.1 1.0±0.2 (1) (2) 14.5±0.5 0.65Max. 0.9 2.3±0.2 2.3±0.2 4.4±0.2 0.9 9.5±0.5 2.5 0.65±0.1 0.75 2.5±0.2 6.8±0.2 0.5±0.1 1.5 Structure


    Original     		PDF 2SB1184 2SB1243 2SB1184 65Max. 2SD1760 2SD1864. SC-63 R1010A 2SB1243 2SD1864

    2SB1185

    Abstract: 2sB1243 2SB1184 2SD1760 hFE is transistor 2SD1762 96-128-B57 power transistor 3A 2SD1864 transistor 2SB1243
    Text: Transistors Power Transistor *60V, *3A 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FExternal dimensions (Units: mm) FStructure Epitaxial planar type


    Original     		PDF 2SB1184 2SB1243 2SB1185 2SD1760 2SD1864 2SD1762. 96-128-B57) 2SB1185 hFE is transistor 2SD1762 96-128-B57 power transistor 3A transistor 2SB1243

    2SD1760

    Abstract: 2SD1762 2SB1185 2SD1864 96214 2sb118 Transistor npn 2SB1184 2SB1243
    Text: Transistors Power Transistor 50V, 3A 2SD1760 / 2SD1864 / 2SD1762 FFeatures 1) Low VCE(sat), VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243 / 2SB1185. FExternal dimensions (Units: mm) FStructure Epitaxial planar type NPN silicon transistor


    Original     		PDF 2SD1760 2SD1864 2SD1762 2SB1184 2SB1243 2SB1185. 96-214-D57) 2SD1762 2SB1185 96214 2sb118 Transistor npn

    2SB1243

    Abstract: 2SD1864
    Text: Power Transistor 50V, 3A 2SD1864 Dimensions (Unit : mm) Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1243. 2SD1864 2.5±0.2 0.65Max. 0.5±0.1 (1) (2) 4.4±0.2 14.5±0.5 Structure Epitaxial planar type


    Original     		PDF 2SD1864 2SB1243. 65Max. R1010A 2SB1243 2SD1864

    TRANSISTOR D400

    Abstract: D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V
    Text: Transistors 2SA1807 2SA1862 96-102-A331 (96-109-A343) 307 Transistors 2SA1812 / 2SA1727 / 2SA1776 (96-609-A313) 320 Transistors 2SA1834 2SC5001 (96-106-B217) (96-193-D217) 292 Transistors 2SA1952 / 2SA1906 / 2SA1757 2SC5103 / 2SC4596 (96-603-A314) (96-199-C314)


    Original     		PDF 2SA1807 2SA1862 96-102-A331) 96-109-A343) 2SA1812 2SA1727 2SA1776 96-609-A313) 2SA1834 2SC5001 TRANSISTOR D400 D400 npn transistor D400 transistor TRANSISTOR NPN D400 D400 npn transistor D302 2sd2166 high hfe transistor NPN transistor 2sd1863 Transistor PNP VCEO 400V

    2sb1243 TRANSISTOR

    Abstract: No abstract text available
    Text: 2SB1243 Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • low collector saturation voltage, typically VCE(sat) = -0.5 V at • complementary pair with 2SD1864 2SB1243 (ATV TV2) lc/lB = -2 A /-0 .2A Applications • medium power amplifier


    OCR Scan     		PDF 2SB1243 2SD1864 2SB1243 2sb1243 TRANSISTOR

    1 w NPN EPITAXIAL PLANAR TYPE

    Abstract: 2SD1760 2SD1864
    Text: 2SD1760 / 2SD1864 Transistors Power Transistor 50V, 3A 2SD1760/2SD1864 •Features •E xternal dimensions (Unite : mm) 1 ) LOW VcE(sal). 2SD1760 VcE(sai) = 0 .5 V (Typ.) 2SD1864 (I c/I b = 2 A / 0 . 2 A ) 2) Complements the 2SB1184 / 2SB1243. il •Structure


    OCR Scan     		PDF 2SD1760 2SD1864 2SB118412SB1243. 2SD1760 SC-63 1 w NPN EPITAXIAL PLANAR TYPE 2SD1864

    TRANSISTOR d1760

    Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
    Text: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type


    OCR Scan     		PDF 2SD1760/2SD1864/2SD1762 2SB1184/2SB1243 /2SB1185. 2SD1760 2SD1864 65Max. SC-63 2SD1762 2sd1760 2sd1864 TRANSISTOR d1760 TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1762 transistor 1002 d1762 f g

    1507M

    Abstract: AAH3 2SB1066
    Text: ROHM CO LTD 40E 0005533 D h y > V Z $ /Transistors 3 E3RHM 2SB1066M/2SB1243 T ” 2 7 -2 i "" 2 S B 1 0 6 6 M h7 > v x ^ «^W ^Jiaiiffl/M edium Power Amp. Vr>JV:V'Ji-7- Epitaxial Planar PNP Silicon Transistors 1 V cE sa t)= —0.5V(Typ.) at Ic / I b = —2 A /—0.2A


    OCR Scan     		PDF 2SB1066M/2SB1243 1507M 2SB1066M/2SB1243 AAH3 2SB1066

    2SB1243

    Abstract: 2SB1066M 2SB1066
    Text: h 7 > v X $ /Transistors 2SB1066M 2SB1243 2SB1066M/2 SB1243 - / i s — r m pnp '> « ;= ]> h 7 > v x ^ l£ f f i ^ i i lP ïffl/Medium Power Amp. Epitaxial Planar PNP Silicon Transistors tjv • ÿf-JFi^fifcH l/'D im snsions U nit : mm • *sä 1) V c E (s a t)= — 0.5V (Typ .)


    OCR Scan     		PDF 2SB1066M/2SB1243 2SB1066M 2SB1243 2SD1507M/2SD1864Â 2SD1507M/2SD1864. 2SB1066M -50wA -50HA U-39U 2SB1243 2SB1066

    2SB1185

    Abstract: 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185
    Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) •E x te rn a l dim ensions (Units: mm) LOW VcE(sei). VcE(aat) — — 0 .5 V (T y p .) (le / Ib = -2 A /-0 .2 A ) 2) Com plem ents the 2SD176 0/ 2SD1864/2SD1762. •S tru c tu re


    OCR Scan     		PDF 2SB1184/2SB1243/2SB1185 2SD1760/ 2SD1864/2SD1762. 2SB1184 2SB1243 SC-63 2SB1185 O-220FP SC-67 2SB1185 2SB11B4 2SB1184 2SB1243 2SD1760 transistor 2sb1185

    b1185

    Abstract: b1184 y206
    Text: Transistors Power Transistor -6 0 V, - 3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) ►External dim ensions (Units: mm) LOW VcE(sat}. VcE(sat) = —0 .5 V (Typ.) (Ic / I b 2) = - 2 A /- 0 .2 A ) Com plem ents the 2 S D 1 7 6 0 / 2 S D 1 8 6 4 /2 S D 1 7 6 2 .


    OCR Scan     		PDF 2SB1184/2SB1243/2SB1185 96-128-B57) 2SB1184 2SB1243 2SB1185 2SB1184) 2SB1243) 2SB1185) b1185 b1184 y206

    B1066M

    Abstract: 1066M
    Text: K ~p > v 7. $ /'Tran sistors 2SB1066M 2SB1243 2S B 1066M /2S B 1243 Epitaxial Planar PNP Silicon Transistors /M edium Power Amp. • WÄ • £ U fi" ^ ;£ [l/D im e n s io n s Unit : mm 1) VcE(sat) V c E (s a t)= -0 .5 V (T y p .) (Ic / I b = ~ 2 A / - 0 . 2 A )


    OCR Scan     		PDF 1066M 2SB1066M 2SB1243 1507M B1066M

    Untitled

    Abstract: No abstract text available
    Text: h 7 > y ^ ^ / T ransistors 2SB1066M /2SB1243 2 S B 1 0 6 6 M ^ ^ ^ ^ u - ^ p n p h 7 >vx^ O C R I O d 1 4J ^ * i'tiffl/M e d iu m Power Amp. Epitaxial Planar PNP Silicon Transistors • 9\Hi'rfiig l/D im e n s io n s U n it: mm) 1) V cE (sat)= —0.5V(Typ.)


    OCR Scan     		PDF 2SB1066M /2SB1243 2SD1507M/2SD1864 2SD1507 --40V --10V, 2SB1243 2SB1066M/2SB1243

    B1185

    Abstract: b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185
    Text: Transistors Power Transistor -60V, -3 A 2SB1184/2SB1243/2SB1185 •F e a tu re s 1) VcE(sat) (Ic / I b 2) • E x t e r n a l d im e n s io n s (U nits: m m ) LOW VcE(sat). = —0.5V (Typ.) = -2 A /-0 .2 A ) C o m p le m e n ts th e 2 S D 1 7 6 0 / 2 S D 1 8 64 / 2 S D 1 762.


    OCR Scan     		PDF 1184/2S B1243/2S B1185 2SB1184/2SB1243/2SB1185 O-126 O-220, 0Dlb713 O-220FN O-220FN O220FP B1185 b1243 TRANSISTOR transistor b1185 TRANSISTOR B1243 b1185 transistor 2SB1185 R B1185