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    2SB1253 Search Results

    2SB1253 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1253 Panasonic Silicon PNP epitaxial planar type Darlington Original PDF
    2SB1253 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1253 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1253 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1253 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1253 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1253P Panasonic TRANS DARLINGTON PNP 110V 6A 3TOP-3 Original PDF
    2SB1253Q Panasonic TRANS DARLINGTON PNP 110V 6A 3TOP-3 Original PDF

    2SB1253 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


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    PDF 2SD1893 2SB1253

    2SD1893

    Abstract: 2SD1893 equivalent 2SB1253
    Text: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : <2.5V


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    PDF 2SD1893 2SB1253 2SD1893 2SD1893 equivalent 2SB1253

    2SB1253

    Abstract: 2SB1253 equivalent 2SD1893
    Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit –130 V –110 V Collector to base voltage


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    PDF 2SB1253 2SD1893 2SB1253 2SB1253 equivalent 2SD1893

    darlington power pack

    Abstract: low saturation pnp 40w transistor 2SB1253 2SD1893 equivalent 2SD1893
    Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm ● ● 0.7 Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V


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    PDF 2SB1253 2SD1893 darlington power pack low saturation pnp 40w transistor 2SB1253 2SD1893 equivalent 2SD1893

    2SB1253

    Abstract: 2SD1893
    Text: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit 130 V 110 V Collector to base voltage


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    PDF 2SD1893 2SB1253 2SB1253 2SD1893

    2SD1893

    Abstract: 2SB1253 2SD1893 equivalent
    Text: SavantIC Semiconductor Product Specification 2SD1893 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·High DC current gain ·Low collector saturation voltage ·Complement to type 2SB1253 APPLICATIONS ·Power amplification ·Optimum for 40W high-fidelity output


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    PDF 2SD1893 2SB1253 2SD1893 2SB1253 2SD1893 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 Unit: mm 0.7 15.0±0.3 11.0±0.2 ● ● ● Optimum for 40W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE sat : < –2.5V


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    PDF 2SB1253 2SD1893

    2SB1253

    Abstract: 2SB1253 equivalent 2SD1893 equivalent 2SD1893
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 5000 Min @IC= -5A ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -5A ·Complement to Type 2SD1893 APPLICATIONS


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    PDF 2SD1893 -130V; -110V; 2SB1253 2SB1253 equivalent 2SD1893 equivalent 2SD1893

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    2SC5936

    Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
    Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


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    PDF XP06501T XP06531 XP06545 XP0A554 XP0D873 XP0D874 XP0D875 2SC5936 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SD1893 2SD1893 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1253 U n it mm 5 2m ax. . 15.5m ax. • Features '• V3.2 6 .9 m in . *1 • O ptim um for 4 0 W hi-fi o u tp u t


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    PDF 2SD1893 2SB1253

    2SD1893

    Abstract: 2SB1253
    Text: P o w e r T ra n s is to rs 2SD1893 2S D 1893 Silicon NPN Triple-Diffused Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SB1253 U nit 6. 9 m i n . H • O ptim um for 4 0 W hi-fi o u tp u t mm 5 2max. ' -3 .2 . 15.5max.


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    PDF 2SD1893 2SB1253 10Vx03A 10Vxi 2SD1893 2SB1253

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1253 2SB1253 Package Dim ensions Silicon PNP Epitaxial Planar Darlington Type Pow er Amplifier C om plem entary Pair with 2 S D 1 8 9 3 • Features • Optimum for 4 0 W hi-fi output • High DC c u rre n t gain Iife : 5000~30000 • Low co lle cto r-e im itte r saturation vo ltage (VcE(sao): C - 2 . 5 V


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    PDF 2SB1253

    2SB1253

    Abstract: 2SD1893
    Text: Power Transistors 2SB1253 2SB 1253 P ackage Dim ensions Silicon P N P Epitaxial Planar Darlington Type Pow er Amplifier C om plem entary Pair with 2 S D 1 8 9 3 Unit : mo 5 2max. "t-3.2 15.5 m ax. . 6 . 9 m in . • F eatures • Optimum for 40W hi-fi output


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    PDF 2SB1253 2SB1253 2SD1893

    2SA1163

    Abstract: 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825
    Text: - 76 - ü s Type No. 2 SB 1578 a g Manuf. a # h SANYO fâ T □— A 9. 2SA1896 2 SB 2SB 2SB 2SB fë T 2SA1753 2SA1257 2SA1753 1582 1583 1584 1585 2SB 1586 2SB 1587 S TOSHIBA B B NEC ÎL HITACH1 s 2SB 1579 2SB 1580 2 SB 1581 S S fâ T fô T fô T v-y'ry y-y'ry


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    PDF 2SB1575 2SA1825 2SB1576 2SA1896 2SA1736 2SB1574 2SA1T53 2SAU82 2SA1121 2SA1366 2SA1163 2SB1255 2SB1576 2SA1736 2SB1253 2SB1575 2SA1121 2SA1257 2SA1366 2SA1825

    Untitled

    Abstract: No abstract text available
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions Vceo (V) General-use Darlington High-hfE VcE(sat) (A) (V) Packag e (No.) lc Ib (mA) <0.8 (A) 7 TOP-3(a) (D64) 700 TOP-3F(a) (D67) 50 7 100


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    PDF 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SA1185 2SB1054/2SD1485 2SB1421 2SD1457 2SD1457A 2SB1252/2SD1892 2SB1502/2SD2275

    2SB1232

    Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
    Text: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004


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    PDF 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229 2SD1891 O-220Fa) 2SB1251 2SB1232 2SB1240 2SB1255 2SB1223 2SB1225 2SB1226

    2SD1915

    Abstract: T0-220MF 2SD1899-Z 2SB1255 2SD1907 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895
    Text: - 272 - Ta=25V, *EPiäTc=25'C -Ö r-L -a m ^ VcEO (V) 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1899 2SD1899-Z 2SD1902 2SD1903 2SD1904 2SD1905 2SM906 2SD1907 2SD1908 2SD1909 2SD1910 2SD1911 o c n i oí o ¿JL/1 ilIL 2SD1913 2SD1914 2SD1915


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    PDF EPHTc-25 2SD1891 2SD1892 2SD1893 2SD1894 2SD1895 2SD1896 2SD1897 2SD1912 2SB1274 2SD1915 T0-220MF 2SD1899-Z 2SB1255 2SD1907

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SD2340 equivalent

    Abstract: D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large Power Transistors Application Functions General-use Vceo (V) lc VcE(sat) (A) (V) 50 7 100 140 80 LOW VcE(sat) D arlington High-hfE Packag e (No.) lc Ib <0.8 (A) 7 (mA) 700 5 <2 3


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2254 2SB1493 2SD1485 2SB1531 2SD2328 2SA1185 2SD2052 equivalent 2SD1641 2SD1707

    2SD2340 equivalent

    Abstract: D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2sd1641 2SD2052 equivalent
    Text: Transistors Selection Guide by Applications and Functions • Silicon Large-Power Transistors Application Functions VcEO (V) General-use 50 100 140 lc 80 LOW VcE(sat) 150 200 400 55 60 80/100 Darlington High-hra. (A) VcE(sat) (V) 7 5 7 10 15 20 6 6 20 4


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    PDF 2SA1185 2SB1054/2SD1485 2SB1421 2SB1154/2SD1705 2SB1155/2SD1706 2SB1156/2SD1707 2SD1457 2SD1457A 2SC4535 2SD1641 2SD2340 equivalent D2250 2SD1485 d2554 2SD2340 audio Darlington 200 W 2SD2052 equivalent

    D1276A

    Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
    Text: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463


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    PDF 2SC4609 2SC4808 2SA1806 2SC4627 2SA1790 2SC4626 2SC4655 2SD2345 2SC46 12SA1 D1276A B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A

    2SB897

    Abstract: 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973
    Text: 73 - m % € Type No. Manuf. & .E SANYO 2S8 1459 in 2SB 1460 □— □— A 2SA1704 A 2SA1692 fé T 2SB 1464 fé T 2 SB 1467 = * / IH 2SB 1462 2SB 1468 2SB 1471 NEC B HITACHI ±L ± a FUJITSU fô T MATSUSHITA m M IT SU B ISH I □ — A ROHM 2SB1452 2SA1774


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    PDF 2SA1709 2SA1704 2SB1434 2SA1692 2SB1117 2SB1452 2SA1832 2SA1836 2SA1774 2SB881 2SB897 2SB1483 2SB1453 2SB348 2sb1497 2SA1692 2SA1776 2sb1355 2SB1370 2SB973

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


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    PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202