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    2SB136 Search Results

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    2SB136 Price and Stock

    Micro Commercial Components 2SB1366F-Y-BP

    TRANS PNP 60V 3A TO220F
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    Micro Commercial Components 2SB1366F-O-BP

    TRANS PNP 60V 3A TO220F
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    UNKNOWN 2SB1368

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    Component Electronics, Inc 2SB1368 38
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    2SB136 Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB136 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB136 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB136 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB136 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB136 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB136 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB136 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB136 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB136 Unknown Cross Reference Datasheet Scan PDF
    2SB136 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB1360 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1360 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1360 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1360 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1360 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1360 ROHM Japanese Transistors Scan PDF
    2SB1360 ROHM TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE Scan PDF
    2SB1360 ROHM TO-220, TO-220FP, TO-220FN, HRT Transistors Scan PDF
    2SB1361 Panasonic Silicon PNP triple diffusion planar type Original PDF
    2SB1361 Panasonic PNP Transistor Original PDF

    2SB136 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SD2060

    Abstract: 2SB1368
    Text: Product Specification www.jmnic.com 2SD2060 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SB1368 ・Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ・Collector power dissipation: PC=25W(TC=25℃)


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    PDF 2SD2060 O-220F 2SB1368 O-220F) 2SD2060 2SB1368

    2SD2052

    Abstract: 2SD205 2SB1361
    Text: Inchange Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN


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    PDF 2SD2052 2SB1361 2SD2052 2SD205 2SB1361

    2SB1361

    Abstract: 2SD2052
    Text: SavantIC Semiconductor Product Specification 2SB1361 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SD2052 ·High transition frequency ·Wide area of safe operation APPLICATIONS ·For high power amplification PINNING


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    PDF 2SB1361 2SD2052 -150V; -20mA 2SB1361 2SD2052

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1362 Silicon PNP triple diffusion planar type For high power amplification Complementary to 2SD2053 Unit: mm 15.0±0.5 4.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features Unit Collector to base voltage VCBO –150 V Collector to emitter voltage


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    PDF 2SB1362 2SD2053

    2SD2053

    Abstract: 2SB1362 ic 4001
    Text: Power Transistors 2SD2053 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1362 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 Symbol Ratings Unit 150 V 150 V Collector to base voltage VCBO VCEO Emitter to base voltage


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    PDF 2SD2053 2SB1362 2SD2053 2SB1362 ic 4001

    2SB1367

    Abstract: 2SD2059
    Text: Inchange Semiconductor Product Specification 2SB1367 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2059 ・Low collector saturation voltage: VCE sat =-2.0V(Max) at IC=-4A,IB=-0.4A ・Collector power dissipation:


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    PDF 2SB1367 O-220F 2SD2059 O-220F) 2SB1367 2SD2059

    2SB1362

    Abstract: 2SD2053
    Text: Inchange Semiconductor Product Specification 2SD2053 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SB1362 APPLICATIONS ・For high power amplifier applications PINNING PIN DESCRIPTION


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    PDF 2SD2053 2SB1362 2SB1362 2SD2053

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 Unit: mm 15.0±0.3 11.0±0.2 ● ● • Absolute Maximum Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage


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    PDF 2SD2052 2SB1361

    2SD2052

    Abstract: 2SB1361
    Text: SavantIC Semiconductor Product Specification 2SD2052 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Wide area of safe operation ·Complement to type 2SB1361 APPLICATIONS ·Optimum for the output stage of a HiFi audio amplifier PINNING PIN


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    PDF 2SD2052 2SB1361 2SD2052 2SB1361

    2SB1366

    Abstract: 2sd2058
    Text: SavantIC Semiconductor Product Specification 2SB1366 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2058 ·Low collector saturation voltage: VCE SAT =-1.0V(Max) at IC=-2A,IB=-0.2A ·Collector power dissipation: PC=25W(TC=25 )


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    PDF 2SB1366 O-220F 2SD2058 O-220F) 2SB1366 2sd2058

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1361 Silicon PNP triple diffusion planar type For high power amplification Unit: mm 5.0±0.2 M Di ain sc te on na tin nc ue e/ d 0.7 15.0±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −150 V Collector-emitter voltage (Base open)


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    PDF 2SB1361 SC-92

    2SD2059

    Abstract: 2SB1367
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1367 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -100V(Min) ·Collector Power Dissipation: PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -2.0V(Max)@ (IC= -4A, IB= -0.4A)


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    PDF 2SB1367 -100V 2SD2059 -100V; 2SD2059 2SB1367

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2052 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1361 M Di ain sc te on na tin nc ue e/ d Unit: mm ● ● • Absolute Maximum Ratings Ratings Unit Collector to base voltage VCBO 150 V Collector to emitter voltage


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    PDF 2SD2052 2SB1361

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SB1366F-O 2SB1366F-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • € Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1


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    PDF 2SB1366F-O 2SB1366F-Y O-220F

    2SD2058

    Abstract: transistor 2sd2058 2SB1366
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1366 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A)


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    PDF 2SB1366 2SD2058 2SD2058 transistor 2sd2058 2SB1366

    2SD2060

    Abstract: 2SB1368
    Text: SavantIC Semiconductor Product Specification 2SD2060 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1368 ·Low collector saturation voltage: VCE SAT =1.7V(Max) at IC=3A,IB=0.3A ·Collector power dissipation: PC=25W(TC=25 )


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    PDF 2SD2060 O-220F 2SB1368 O-220F) 2SD2060 2SB1368

    2sb1367

    Abstract: 2SD2059
    Text: SavantIC Semiconductor Product Specification 2SB1367 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2059 ·Low collector saturation voltage: VCE sat =-2.0V(Max) at IC=-4A,IB=-0.4A ·Collector power dissipation: PC=30W(TC=25 )


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    PDF 2SB1367 O-220F 2SD2059 O-220F) -100V; 2sb1367 2SD2059

    2SB1369

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB1369 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·High collector power dissipation ·High current capability APPLICATIONS ·For general purpose applications PINNING PIN DESCRIPTION 1 Emitter


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    PDF 2SB1369 O-220 O-220) 2SB1369

    2SD2061

    Abstract: 2SB1369 transistor 2sd2061 IC vertical monitor
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1369 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -180V(Min) ·Low Collector Saturation Voltage: VCE(sat)= -1.0V(Max)@ (IC= -0.5A, IB= -50mA) ·Complement to Type 2SD2061


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    PDF 2SB1369 -180V -50mA) 2SD2061 -10mA; -50mA -200V; 2SD2061 2SB1369 transistor 2sd2061 IC vertical monitor

    2SB1362

    Abstract: 2SD2053
    Text: SavantIC Semiconductor Product Specification 2SB1362 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Wide area of safe operation ·Complement to type 2SD2053 APPLICATIONS ·For high power amplifier applications PINNING PIN DESCRIPTION 1 Base


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    PDF 2SB1362 2SD2053 -150V; -20mA 2SB1362 2SD2053

    A 933 S transistors

    Abstract: 2SB1361 2SD2052 IS020
    Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features Unit *. mm 5.2max. ' / 3.2 , 15.5max. , 6.9min. • V ery good lin earity o f DC c u r re n t gain hKF


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    PDF 2SD2052 2SB1361 tc-25 A 933 S transistors 2SB1361 2SD2052 IS020

    294a

    Abstract: 2SB1361 2SD2052
    Text: Power T ransistors 2SB1361 2SB1361 Silicon PNP Triple-Diffused Planar Type Package Dimensions High Power Amplifier Complementary Pair with 2SD2052 • Features • V ery good linearity o f DC current gain I i f e • W ide area o f sa fety operation (ASO)


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    PDF 2SB1361 2SD2052 bT32fl52 294a 2SB1361 2SD2052

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SD2052 2SD2052 Silicon Triple-Diffused Planar Type Package Dimensions High Powe< Amplifier Complementary Pair with 2SB1361 • Features ro 4 - - Unit *. mm 5.2max. Ì/3 .2 6 . 9 m in . S r - Z L - k • V ery good linearity of DC c u rre n t gain hpF


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    PDF 2SD2052 2SB1361 SD2052 bT326S

    2SB1360

    Abstract: No abstract text available
    Text: 2SB1360 Transistor, PNP Features Dimensions Units : mm • available in HRT package • low collector saturation voltage, typically VCE(sat) - -0.3 V at lc/lB = -3 A/-0.3 A excellent current-to-gain characteristics • • 2SB1360 (HRT) 8 .0 ±0.2 4.5 ±0.2


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    PDF 2SB1360 2SD2040 2SB1360