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    2SB143 Search Results

    2SB143 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    2SB1430-AZ Renesas Electronics Corporation Bipolar Power Transistors, , / Visit Renesas Electronics Corporation
    2SB1431-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-45F, / Visit Renesas Electronics Corporation
    2SB1432-AZ Renesas Electronics Corporation Bipolar Power Transistors, MP-45F, / Visit Renesas Electronics Corporation
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    2SB143 Price and Stock

    Panasonic Electronic Components 2SB14380RA

    TRANS PNP 100V 2A MT-2
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    DigiKey 2SB14380RA Ammo Pack
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    Renesas Electronics Corporation 2SB1430-AZ

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    Avnet Americas 2SB1430-AZ Bulk 4 Weeks 1
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    Rochester Electronics 2SB1430-AZ 2 1
    • 1 $1.08
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    • 100 $1.02
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    Renesas Electronics Corporation 2SB1431AZK

    Bipolar Transistor (BJT)
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    Chip1Stop 2SB1431AZK 2,510
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    • 100 $5.76
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    Renesas Electronics Corporation 2SB1432-AZ-K

    Bipolar Transistor (BJT)
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    Chip1Stop 2SB1432-AZ-K 1,600
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    • 100 $6.85
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    Renesas Electronics Corporation 2SB1432AZL

    Bipolar Transistor (BJT)
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    Chip1Stop 2SB1432AZL 885
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    2SB143 Datasheets (102)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB143 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB143 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB143 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB143 Unknown Vintage Transistor Datasheets Scan PDF
    2SB143 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB143 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB143 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB143 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB143 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB143 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB143 Unknown Cross Reference Datasheet Scan PDF
    2SB1430 NEC Silicon power transistor Original PDF
    2SB1430 NEC Semiconductor Selection Guide 1995 Original PDF
    2SB1430 NEC Semiconductor Selection Guide Original PDF
    2SB1430 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1430 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1430 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1430 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1430 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1430K NEC PNP Silicon Epitaxial Transistor (Darlington Connection) for Low-Frequency Power Amplifiers and Low-Speed Switching Original PDF

    2SB143 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features ■ Absolute Maximum Ratings 14.5±0.5 ● (1.0) ● *1 0.65 max. High collector to emitter voltage VCEO.


    Original     		PDF 2SD2184 2SB1438

    2SB1430

    Abstract: No abstract text available
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SB1430 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1430 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers


    Original     		PDF 2SB1430 2SB1430

    2SB1438

    Abstract: 2SD2184
    Text: Transistor 2SD2184 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1438 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● 1.0 1.0 ● 1.45 0.8 0.2 High collector to emitter voltage VCEO. Low collector to emitter saturation voltage VCE(sat).


    Original     		PDF 2SD2184 2SB1438 2SB1438 2SD2184

    2SB1438

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) 2SB1438 2SB1438

    2SB1435

    Abstract: SJD00074BED
    Text: Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping


    Original     		PDF 2SB1435 2SB1435 SJD00074BED

    2SB1438

    Abstract: 2SD2184 PF-8500
    Text: Transistor 2SD2184 Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB1438 6.9±0.1 4.0 2.5±0.1 0.8 • Features (0.5) (1.0) (0.2) 4.5±0.1 0.7 (1.0) 0.65 max. 14.5±0.5 • High collector to emitter voltage VCEO


    Original     		PDF 2SD2184 2SB1438 2SB1438 2SD2184 PF-8500

    2SB1438

    Abstract: No abstract text available
    Text: Transistor 2SB1438 Silicon PNP epitaxial planer type For low-frequency output amplification Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 0.7 4.0 0.8 0.2 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . High collector to emitter voltage VCEO.


    Original     		PDF 2SB1438 2SB1438

    2SB1434

    Abstract: 2SD2177
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou


    Original     		PDF 2002/95/EC) 2SD2177 2SB1434 2SB1434 2SD2177

    2SB1434

    Abstract: 2SD2177
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1434 Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD2177 Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) 2SB1434 2SD2177 2SB1434 2SD2177

    2SB1434

    Abstract: 2SD2177
    Text: Transistors 2SB1434 Silicon PNP epitaxial planer type Unit: mm 1.05 2.5±0.1 ±0.05 0.15 6.9±0.1 4.0 0.8 0.2 0.7 1.0 1.0 • Features • Low collector to emitter saturation voltage VCE sat • Allowing supply with the radial taping (1.45) 0.5 4.5±0.1 For low-frequency output amplification


    Original     		PDF 2SB1434 2SD2177 2SB1434 2SD2177

    2SB1434

    Abstract: 2SD2177
    Text: Transistor 2SD2177 Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 1.05 2.5±0.1 ±0.05 • Features 0.65 max. 14.5±0.5 ● Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SB1434.


    Original     		PDF 2SD2177 2SB1434 2SB1434. 2SB1434 2SD2177

    2SB1430

    Abstract: RL25A IC2A
    Text: SavantIC Semiconductor Product Specification 2SB1430 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain. ·Low collector saturation voltage. ·DARLINGTON APPLICATIONS ·Ideal for motor drivers and solenoid drivers In such as OA and FA equipment


    Original     		PDF 2SB1430 O-220F O-220F) -100V 2SB1430 RL25A IC2A

    2SB1438

    Abstract: No abstract text available
    Text: Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 0.8 • Low collector-emitter saturation voltage VCE(sat) • Large collector-emitter voltage (Base open) VCEO • Allowing supply with the radial taping


    Original     		PDF 2SB1438 45ues, 2SB1438

    2SB1435

    Abstract: No abstract text available
    Text: Power Transistors 2SB1435 Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification • Low collector to emitter saturation voltage VCE sat • Large collector current IC • Allowing automatic insertion with radial taping 16.0±1.0


    Original     		PDF 2SB1435 2SB1435

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 M Di ain sc te on na tin nc ue e/ d 0.7 • Low collector-emitter saturation voltage VCE(sat)


    Original     		PDF 2002/95/EC) 2SB1438

    2SB1434

    Abstract: 2SD2177
    Text: Transistors 2SD2177 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1434 Unit: mm 6.9±0.1 4.0 2.5±0.1 0.8 • Features • Low collector-emitter saturation voltage VCE(sat) • Allowing supply with the radial taping


    Original     		PDF 2SD2177 2SB1434 2SB1434 2SD2177

    Untitled

    Abstract: No abstract text available
    Text: 2SB1436 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)


    Original     		PDF 2SB1436

    FIL CRF0881B062

    Abstract: 2SB1438
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1438 Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm 6.9±0.1 4.0 0.7 2.5±0.1 (0.8) • Low collector-emitter saturation voltage VCE(sat) • Large collector-emitter voltage (Base open) VCEO


    Original     		PDF 2002/95/EC) 2SB1438 FIL CRF0881B062 2SB1438

    2SB1431

    Abstract: No abstract text available
    Text: '$7$ 6+ 7 6,/,&21 32:(5 75$16,6725 6% 313 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 25 /2:)5(48(1&< 32:(5 $03/,),(56 $1' /2:63(' 6:,7&+,1* The 2SB1431 is a Darlington power transistor that can directly PACKAGE DRAWING (UNIT: mm) drive from the IC output. This transistor is ideal for motor drivers


    Original     		PDF 2SB1431

    ic est 7502

    Abstract: B1439 2SB1439 2SD2183
    Text: Power Transistors 2SB1439 2SB1439 Silicon PNP Epitaxial Planar Type • Package Dim ensions AF Output Am plifier C o m plem entary Pair with 2 S D 2 1 8 3 ■ Features • Low co llector-em itter saturation voltage VcE(sao • High co llector-em itter voltage


    OCR Scan     		PDF 2SB1439 2SD2183 132AS2 GGlb33S ic est 7502 B1439 2SB1439 2SD2183

    Untitled

    Abstract: No abstract text available
    Text: Power T ransistors 2SB1435 2SB1435 Silicon PNP Epitaxial Planar Type • Package Dim ensions A F Output Amplifier Unit : mm ■ Features • Low collector-em itter saturation voltage VcE(sao • High collector current (Ic) • Automatic mounting by radial taping is possible.


    OCR Scan     		PDF 2SB1435 200MHz DDlb333 001b33M

    2SB1438

    Abstract: 2SD2182
    Text: Panasonic 2SD2182 -> ' 3 > N P N I \ ¿ * -> 7 )\>- ? \s - i-J& 2SB1438 •m fi • 3 U ? ? • X Î -, ? MfE VCEO • 3 1/^ÿ'X 5-; • 7 - > ' 7 ) V f - t f > ^ T ' W f  f ê ñl#é„ VCE sat)Ä!l V ' o ■ IÈ * Î* * J È tt-(T a = 2 5 t) Item 3 1 /^


    OCR Scan     		PDF 2SD2182 2SB1438 200mA 200MHz 2SB1438 2SD2182

    2SB1436

    Abstract: No abstract text available
    Text: Transistors Low Frequency Transistor 20V, 5A 2SB1386/2SB1412/2SB1326/2SB1436 • F e a tu re s 1) •E xtern a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = —0.35V (Typ.) (I c / I b = -4 A / -0 .1 A ) 2) Excellent D C current gain charac­ teristics.


    OCR Scan     		PDF 2SB1386/2SB1412/2SB1326/2SB1436 2SB1386 2SD2098/ 2SD2118/2SD2097/2SD2166. 2SB1412 SC-62 SC-63 2SB1326 2SB1436 2SB1436

    2SB1436

    Abstract: No abstract text available
    Text: h 7 > y ^ ^ /Transistors 2SB1436 2SB1436 1 1°$ * '> TJl>y Is - +M PNP y V □ > K ÿ > y 7. $ Epitaxial Planar PNP Silicon Transistor ‘l£J§ J&5^iÖlH ffl/Lo w Freq. Power Amp. N P 7 7 7 s> =lffl/Strobo Flash • W f i\ f 5 il2 l/ D im e n s io n s U n it : mm)


    OCR Scan     		PDF 2SB1436 2SB1436 O-126FP 100MHz