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    Panasonic Electronic Components 2SB1548AP

    TRANS PNP 80V 3A TO220D-A1
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    Panasonic Electronic Components 2SB1548AQ

    3 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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    Quest Components 2SB1548AQ 17
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    2SB154 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2SB154 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB154 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB154 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB154 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB154 Unknown Cross Reference Datasheet Scan PDF
    2SB154 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB154 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB154 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB154 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB154 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB154 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1540 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1540 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1540 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1541 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1541 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SB1541 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB1541 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB1541 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1542 Unknown Japanese Transistor Cross References (2S) Scan PDF

    2SB154 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD2374A 2SB1548A

    2SB1548A

    Abstract: 2SD2374 2SD2374A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 M Di ain sc te on na tin nc ue e/ d 2.9±0.2


    Original     		PDF 2002/95/EC) 2SD2374A 2SB1548A 2SB1548A 2SD2374 2SD2374A

    2SB1548

    Abstract: 2SB1548A 2SD2374 2SD2374A 2sb15
    Text: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 M Di ain sc te on na tin nc ue e/ d • Features Collector to base voltage 2SB1548


    Original     		PDF 2SB1548, 2SB1548A 2SD2374 2SD2374A 2SB1548 O-220D-A1 2SB1548 2SB1548A 2SD2374A 2sb15

    2sb1548

    Abstract: 2SB1548A 2SD2374 2SD2374A
    Text: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374 and 2SD2374A Unit: mm • Features ■ Absolute Maximum Ratings Parameter TC=25˚C Symbol Collector to 2SB1548 base voltage 2SB1548A Collector to


    Original     		PDF 2SB1548, 2SB1548A 2SD2374 2SD2374A 2SB1548 2sb1548 2SB1548A 2SD2374A

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 Parameter Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF 2002/95/EC) 2SB1548A 2SD2374A

    2374A

    Abstract: 2sb1548 2SB1548A
    Text: Inchange Semiconductor Product Specification 2SB1548 2SB1548A Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2374/2374A ・Low collector saturation voltage ・High forward current transfer ratio hFE which has satisfactory linearity


    Original     		PDF 2SB1548 2SB1548A O-220F 2SD2374/2374A O-220F) 2SB1548 2374A 2SB1548A

    2374A

    Abstract: 2sb1548 2SB1548A
    Text: SavantIC Semiconductor Product Specification 2SB1548 2SB1548A Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity


    Original     		PDF 2SB1548 2SB1548A O-220F 2SD2374/2374A O-220F) 2SB1548 2374A 2SB1548A

    2SB1548

    Abstract: 2SB1548A 2SD2374 2SD2374A
    Text: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 9.9±0.3 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage Collector to emitter voltage


    Original     		PDF 2SD2374, 2SD2374A 2SB1548 2SB1548A 2SD2374 O-220D-A1 2SB1548A 2SD2374 2SD2374A

    2SD2374

    Abstract: 2SB1548 2SB1548A 2SD2374A
    Text: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 3.0±0.5 • Absolute Maximum Ratings TC = 25°C Collector to base voltage Collector to emitter voltage 2SD2374


    Original     		PDF 2SD2374, 2SD2374A 2SB1548 2SB1548A 2SD2374 O-220D 2SD2374 2SB1548A 2SD2374A

    2SD2374

    Abstract: 2SD2374A
    Text: SavantIC Semiconductor Product Specification 2SD2374 2SD2374A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1548/1548A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity


    Original     		PDF 2SD2374 2SD2374A O-220F 2SB1548/1548A O-220F) 2SD2374 2SD2374A

    2sb1548

    Abstract: 2SB1548A 2SD2374 2SD2374A
    Text: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base


    Original     		PDF 2SB1548, 2SB1548A 2SD2374 2SD2374A 2SB1548 2sb1548 2SB1548A 2SD2374A

    2sb15

    Abstract: No abstract text available
    Text: 2SB154060ML 2SB154060ML 肖特基二极管芯片 描述 Ø 2SB154060ML是采用硅外延工艺制造的肖特基 二极管芯片； Ø 损耗功率小，效率高； Ø 高ESD能力； Ø 高抗浪涌电流能力； Ø 具有瞬态反应保护能力的保护环结构；


    Original     		PDF 2SB154060ML 2SB154060MLYY 604dice/wafer DO-201AD 2sb15

    2SB1548A

    Abstract: 2SD2374A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SB1548A 2SD2374A 2SB1548A 2SD2374A

    transistor pnp 12V 1A Collector Current

    Abstract: 2SB1548A 2SD2374A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1548A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max)@ (IC= -3A, IB= -0.375A)


    Original     		PDF 2SB1548A 2SD2374A 10MHz transistor pnp 12V 1A Collector Current 2SB1548A 2SD2374A

    Untitled

    Abstract: No abstract text available
    Text: 2SB154100MA 2SB154100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION 2SB154100MA is a schottky barrier diode chips Ø Lb fabricated in silicon epitaxial planar technology; La Ø Due to special schottky barrier structure, the chips have very low reverse leakage current typical


    Original     		PDF 2SB154100MA 2SB154100MA 002mA@

    2SB1548A

    Abstract: 2SD2374 2SD2374A
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 φ 3.2±0.1 • Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 2002/95/EC) 2SD2374A 2SB1548A 2SB1548A 2SD2374 2SD2374A

    Untitled

    Abstract: No abstract text available
    Text: 2SB154040ML 2SB154040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø 2SB154040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; Ø Low power losses, high efficiency; Ø High ESD capability; Ø High surge capability; Ø


    Original     		PDF 2SB154040ML 2SB154040ML 2SB154040MLYY 604dice/wafer

    2sb1548

    Abstract: 2SB1548A 2SD2374 2SD2374A
    Text: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base


    Original     		PDF 2SB1548, 2SB1548A 2SD2374 2SD2374A 2SB1548 2sb1548 2SB1548A 2SD2374A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1548, 2SB1548A Silicon PNP epitaxial planar type Unit: mm For power amplification Complementary to 2SD2374 and 2SD2374A 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Features ■ Absolute Maximum Ratings TC = 25°C Parameter Collector to base


    Original     		PDF 2SB1548, 2SB1548A 2SD2374 2SD2374A 2SB1548

    2SB1548

    Abstract: 2SB1548A 2SD2374 2SD2374A
    Text: Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type Unit: mm For power amplification Complementary to 2SB1548 and 2SB1548A 4.6±0.2 9.9±0.3 M Di ain sc te on na tin nc ue e/ d 3.0±0.5 2.9±0.2 Collector to base voltage 2SD2374 Collector to


    Original     		PDF 2SD2374, 2SD2374A 2SB1548 2SB1548A 2SD2374 O-220D-A1 2SB1548A 2SD2374 2SD2374A

    2SB1548A

    Abstract: 2SD2374A
    Text: Power Transistors 2SB1548A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2374A Unit: mm 4.6±0.2 9.9±0.3 3.0±0.5 2.9±0.2 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage Emitter open


    Original     		PDF 2SB1548A 2SD2374A 2SB1548A 2SD2374A

    2SB1548

    Abstract: 2SD2374
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1548 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.2V(Max)@ (IC= -3A, IB= -0.375A)


    Original     		PDF 2SB1548 2SD2374 10MHz 2SB1548 2SD2374

    2SA1264N

    Abstract: 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207
    Text: - m Type « tt No. « Manuf. 2 S A 1 78 5 = >¥ 2 S A 1 78 8 □— A 2 S A 1 78 9 □ — A H if SANYO 2 S A 1 78 7 ^ 2 S A 1 79 0 M £ S 1 TOSHIBA NEC 2SA1432 2SA1264N 2SB966 9SA1R3? 2SA1836 B aL H I TACH! 2SB1508 * ± a FUJITSU T MATSUSHITA 2SB1546 2SB1207


    OCR Scan     		PDF 2SB1546 2SA143Z 2SB1207 2SA1264N 2SB966 2SB1362 2SB1508 2SB1373 2SA1821 2SA1832 2sa143z 2SA1705 2SA1283 1818 2SA1613 2SB1421 2SA1821 2SA949 2SB1207

    2SB1549

    Abstract: No abstract text available
    Text: b 7 > is / T ransistors 2SB1549 • 2SB1549 Ik ? * * y 7 J t f U - f # PNP y <; 3 > h7 > y M W - V ' s h > Epitaxial Planar PNP Silicon Transistor Darlington Freq. Power Amp. M ) • ^•Jfi'+jiEil/Dimensions (U n it: mm) ft« 1) ? - ' ) > h > } g ^ T 'h F E


    OCR Scan     		PDF 2SB1549 100ms) --50pA 2SB1549