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    2SB1565 TRANSISTOR Search Results

    2SB1565 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SB1565 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SB1370

    Abstract: 2SB1565 2SB1655
    Text: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319


    Original     		2SB1370 2SB1655 2SB1565 94L-411-B303) 94L-456-B349) 2SB1370 2SB1565 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SB1565 Transistors For Power Amplification −60V, −3A 2SB1565 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 8.0 2.8 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE.


    Original     		2SB1565 O-220FN 2SD2394 PDF

    2SB1565

    Abstract: No abstract text available
    Text: 2SB1565 Transistors Power Transistor −60V, −3A 2SB1565 !External dimensions (Units : mm) !Features 1) Low VCE(sat). (Typ.−0.3V at IC/IB = −2/−0.2A) 2) Excellent DC current gain characteristics. 3) Wide SOA (safe operating area). 10.0 4.5 2.8 8.0


    Original     		2SB1565 O-220FN 2SB1565 PDF

    2SD2394

    Abstract: 2sb1565 T0220FP
    Text: hÿ y v 7. $ /Transistors 2SB1565 2SB1565 X tr * * y 7 l / - * M PNP y 'J H > h ÿ > y 7 £ Epitaxial Planar PNP Silicon Transistor féJij& Ç ^jJt'Iïffl/Lo w Freq. Power Amp. * ^ JférfìtE I/D im e n s to n s Unit : mm 1) VcE(sat) V cE (sat)= -0.3V (Typ.)


    OCR Scan     		2SB1565 2SB1565 2SD2394 T0-220FP O-220FN T0220FP PDF

    2SB1565

    Abstract: 2SD2394 2sb15
    Text: Inchange Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2394


    Original     		2SB1565 O-220F 2SD2394 O-220F) 2SB1565 2SD2394 2sb15 PDF

    2SD2394

    Abstract: 2SB1565
    Text: SavantIC Semiconductor Product Specification 2SD2394 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1565 PINNING PIN DESCRIPTION 1 Base 2 Collector


    Original     		2SD2394 O-220F 2SB1565 O-220F) 2SD2394 2SB1565 PDF

    2SB1565

    Abstract: 2SD2394
    Text: SavantIC Semiconductor Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SD2394


    Original     		2SB1565 O-220F 2SD2394 O-220F) 2SB1565 2SD2394 PDF

    2SB1565

    Abstract: 2SD2394
    Text: JMnic Product Specification 2SB1565 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Excellent DC current gain characteristics ・Low collector saturation voltage ・Wide SOA safe operating area ・Complement to type 2SD2394 PINNING PIN


    Original     		2SB1565 O-220F 2SD2394 O-220F) 2SB1565 2SD2394 PDF

    2sB1565 transistor

    Abstract: 2SB1565 transistor 2sb1565
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1565 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Collector Power Dissipation: PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -2A, IB= -0.2A)


    Original     		2SB1565 2sB1565 transistor 2SB1565 transistor 2sb1565 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SB1370 2SB1655 / 2SB1565 94L-411-B303 (94L-456-B349) 319 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the


    Original     		2SB1370 2SB1655 2SB1565 94L-411-B303) 94L-456-B349) PDF

    B1370

    Abstract: B1565 2SB1370
    Text: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor —60V, —3A 2S B 13 70 • A b so lu te maximum ratings ( T a = 25‘C ) • F eatu res 1) 2 ) 3} 4) L ow VcE(sat). (Typ.— 0 .3 V at Ic /Ib “ “ ’2/— -0.2A) Excellent D C current gain characteristics.


    OCR Scan     		2SB1370 2SB1655/ 2SB1565 --60V, 2SB1655 94L-456-B349) B1370 B1565 PDF

    LE50

    Abstract: 2SB1370 2SB1565 2SB1655 B303
    Text: 2SB1370 2SB1655/ 2SB1565 Transistors I Power Transistor 60V, —3A 2S B 1370 • A b s o l u t e m a x im u m r a tin g s •F e a tu re s 1 ) Low saturation voltage, typically VcE(sat) = — 0 . 3 V at le / Ib = —2A / - 0 .2 A . 2 ) Excellent DC curre nt gain characteristics.


    OCR Scan     		2SB1370 2SB1655/2SB1565 2SB1370 O-220FN 2SB1655 2SB1565 94L-456-B349) LE50 2SB1565 B303 PDF

    2SB1655

    Abstract: 2SB1565 2SB1370 SC-75A
    Text: 2 S B 13 70 Transistors I 2 S B 1 655 / 2 S B 1 565 Power Transistor —60V, —3A 2SB1370 •A b s o lu te maximum ratings (Ta—2 5 t ) •F e a tu re s 1) Low VcE(aat). ( T y p — 0 .3 V a t lc /lB= —2 /—0.2A) 2 ) Excellent DC curre nt gain characteristics.


    OCR Scan     		2SB1370 2SB1655 2SB1565 --60V, 2SB1370 O-220FN O-126 O-220, 0Dlb713 2SB1565 SC-75A PDF

    2SC5248

    Abstract: 2SD2025 2SB1185 2SA1964 2sb1655
    Text: Transistors / Leaded Type • T0-126FP Package The TO-126FP series products are direct mounting type chips that do not need an insulating sheet, and allow for cost-effective assembly. Part No. NPN VCEO V 2SB891F 2SD1189F 32 2 2SB889F 2SD1200F 80 0.7 - 2SD1381F


    OCR Scan     		T0-126FP O-126FP 2SB891F 2SB889F 2SB1436 2SD1189F 2SD1200F 2SD1381F 2SD2343 2SD2166 2SC5248 2SD2025 2SB1185 2SA1964 2sb1655 PDF

    2SK2540

    Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
    Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )


    OCR Scan     		2SK2262 2SK2294 -220FN 2SK2792 2SK2459N 2SK2460N 0-220FN 2SK2713 2SK2793 2SK2540 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F PDF

    2SD2394

    Abstract: 2SB1565
    Text: 2SD2394 Transistors For Power Amplification 60V, 3A 2SD2394 zStructure NPN Silicon Triple Diffused Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 8.0 2.8 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE.


    Original     		2SD2394 O-220FN 2SB1565 2SD2394 2SB1565 PDF

    2SC1740 transistor

    Abstract: A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819
    Text: Transistor Quick reference Package -Application Application Low rbb' Head Amp V ceo V * V ces * * V CER FTL ATR ATV 80 SPT ( 2SB737 TO-92L 2SB1276 f 2SA937AMLN V2SC2021LN(RS) 2SC1740S(E) 2SC1740SLN(E) / 2SA933A ( 2SA933AS \2SC1740(QRS) V 2SC1740SÌQRS) / 2SA933ALN /' 2SA933ASLN


    OCR Scan     		2SC2021LN 2SB821 2SB1276 2SC2021MLN O-92L O-92LS 2SB737 V2SD786 2SA1137 2SC1740 2SC1740 transistor A1757 B1130AM 2SD2061F 2SD1466 2SC5083 B1236A mos-fet darlington 2sc4721 transistor 2sa1819 PDF

    2SB1185

    Abstract: 2sb1569a 2sd2037 transistor
    Text: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


    OCR Scan     		O-220 T0-220FP T0-220FN O-220FP O-220 O-220FN 2SA1634 2SB1369 2SB1185 2sb1569a 2sd2037 transistor PDF

    SB1335A

    Abstract: 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041
    Text: Transistors " 7aaa^ 0DD7^ bD*" RH" TO-220 •T0-220FP •TO-220FN •HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. T0-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


    OCR Scan     		O-220 T0-220FP O-220FN O-220FP T0-220 O-220FN SB1335A 2SD2061 2sd2033a 2SB1496 2SB1342 transistor 2sD2091 2SD2394 2SB1370 2SC4354 2SD2041 PDF

    2SB1335A

    Abstract: 2sd2033a 2SD2061 2SB1496 2SD2037 2sd2396 2SA1757 2SB1370 2SB1616 2SD2033
    Text: Transistors T0-220 •TO-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


    OCR Scan     		T0-220 O-220FP O-220FN O-220FP O-220 O-220FN T0-220FN 2SB1335A 2sd2033a 2SD2061 2SB1496 2SD2037 2sd2396 2SA1757 2SB1370 2SB1616 2SD2033 PDF

    sj 2038

    Abstract: 2SB1335A 2SD2061 2SB1496 2SD2037 2sd2396 2SD2039 2SB1370 2SC4354 2sd2033a
    Text: Transistors TO-220 • T0-220FP • T0-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


    OCR Scan     		O-220 T0-220FP T0-220FN O-220FP O-220 O-220FN T0-220FP sj 2038 2SB1335A 2SD2061 2SB1496 2SD2037 2sd2396 2SD2039 2SB1370 2SC4354 2sd2033a PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors T0-220 • T0-220FP • TO-220FN • HRT TO-220FP is a TO-220 with mold coated fin for easier mounting and higher PC, 2W. TO-220FN is a low profile by 2mm version of TO-220FP without fin support pin, for higher mounting density. HRT is a taped power transistor package for use with an automatic placement machine.


    OCR Scan     		T0-220 T0-220FP O-220FN O-220FP O-220 O-220FN 2SA1634 2SB1369 PDF

    2n4401 331

    Abstract: 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B
    Text: Transistors Product List Product List 2N3904 . 614 2S B 2N3906 . 598


    OCR Scan     		2N3904 2N3906 2N4401 2N4403 2SA821S. 2SA830S. 2SA854S. 2SB822 2n4401 331 2n4403 331 2n3904 409 2n3904 331 k 2715 2n3906 331 1352s MPSA06 346 2N584 C847B PDF

    2SD2159

    Abstract: 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF
    Text: b? > > 7 . $ / 7 ransistors / \ ’ y L i s t 4 — o f y P B i J K r o d u c t s S i - l l * f o r E a c h 2 S P A / b a c k a g / c e / d í í ( 2 S < A ~ / B f / C / D T y p e ) • SPT Part No. Application VcEO(V) lc(A) lc Max-(A) 2SA825S Low Noise


    OCR Scan     		2SA825S 2SA830S 2SA854S 2SA933AS 2SA933ASLN 2SA1198S 2SA1199S 2SA1515S 2SA1585S 2SC1645S 2SD2159 2SD2421 2SB1485 2SB1333 2sd2061 2sc2021qrs 2SD2172 2sD2388 DARLINGTON RF PDF