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    2SB1602 Search Results

    2SB1602 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB1602 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB1602 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SB1602 Toshiba TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE Scan PDF
    2SB1602 Toshiba TRANSISTOR (POWER AMPLIFIER APPLICATIONS) Scan PDF
    2SB1602 Toshiba PNP transistor Scan PDF

    2SB1602 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2462

    Abstract: 2SB1602 2SD2462
    Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602


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    PDF 2SD2462 2SB1602 D2462 2SB1602 2SD2462

    D2462

    Abstract: 2SB1602 2SD2462
    Text: 2SD2462 東芝トランジスタ シリコンNPN三重拡散形 2SD2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)


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    PDF 2SD2462 2SB1602 20070701-JA D2462 2SB1602 2SD2462

    d2462

    Abstract: 2SD2462 2SB1602
    Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


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    PDF 2SD2462 2SB1602 d2462 2SD2462 2SB1602

    D2462

    Abstract: 2SD2462 2SB1602
    Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


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    PDF 2SD2462 2SB1602 D2462 2SD2462 2SB1602

    D2462

    Abstract: 2SB1602 2SD2462
    Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


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    PDF 2SD2462 2SB1602 D2462 2SB1602 2SD2462

    d2462

    Abstract: No abstract text available
    Text: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •


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    PDF 2SD2462 2SB1602 d2462

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SD2462 2SB1602

    2SB1602

    Abstract: 2SD2462
    Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602


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    PDF 2SD2462 2SB1602 2SD2462

    Untitled

    Abstract: No abstract text available
    Text: 2SB1602 SILICON PNP TRIPLE DIFFUSED TYPE DARLINGTON POWER PO W ER AM PLIFIER APPLICATIO NS • • U n it in mm High DC Current Gain : hFE = 300-1000 (V c e = - 5 V , I c = -0 .5 A ) Low Collector Saturation Voltage. : v C E(sat)= —0.4V (Typ.) ( Iq = —1A, lB = -1 0 m A )


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    PDF 2SB1602 --60V, --10mA --10V,

    2SB1602

    Abstract: 2SD2462
    Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : ^FE 1 = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SD2462 2SB1602 2SD2462

    d2462

    Abstract: No abstract text available
    Text: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602


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    PDF 2SD2462 2SB1602 d2462

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; hjrg i = 300~ 1000 Low Collector Saturation Voltage : v CE(sat)= -0.5V (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SB1602 2SD2462

    2SB1602

    Abstract: 2SD2462
    Text: TOSHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : ^FE 1 = 300~1000 Low Collector Saturation Voltage : VCE (sat)“ —0.5y (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)


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    PDF 2SB1602 2SD2462 100ms 2SB1602

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1602 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 6 Q2 High DC Current Gain : ^FE 1 = 300—1000 Low Collector Saturation Voltage • VCE (sat)= —0-5V (Typ.) Complementary to 2SD2462 • •


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    PDF 2SB1602 2SD2462

    2SB1602

    Abstract: 2SD2462
    Text: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602


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    PDF 2SD2462 2SB1602 2SD2462

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


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    PDF 2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346

    2sC5200, 2SA1943, 2sc5198

    Abstract: GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102
    Text: • ALPHNUMERICAL INDEX Type No. Page Type No. Page Type No. Page 2SA817A 121 2SA1387 202 2SA1892 278 2SA940 123 2SA1388 206 2SA1893 280 2SA949 125 2SA1408 209 2SA1899 281 2SA965 127 2SA1425 212 2SA1905 282 2SA966 129 2SA1426 214 2SA1923 284 2SA1012 131 2SA1428


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    PDF 2SA817A 2SA940 2SA949 2SA965 2SA966 2SA1012 2SA1013 2SA1020 2SA1145 2SA1160 2sC5200, 2SA1943, 2sc5198 GTI5Q101 2sc5039 2SC4532 2SD2088 2SC3303 2sC5200, 2SA1943 2SA1803 2sc4408 GT10G102

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    PDF 015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P