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    2SB343 Search Results

    2SB343 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB343 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB343 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB343 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB343 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB343 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB343 Unknown Vintage Transistor Datasheets Scan PDF
    2SB343 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB343 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB343 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB343 Unknown Cross Reference Datasheet Scan PDF
    2SB343 Sanyo Semiconductor Sanyo Datasheets, Cross References and Circuit Examples Scan PDF

    2SB343 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sb341

    Abstract: 2SB331 2SB400 2SB328 2SB337 2SB383 2SB382 2SB381 st6220 programmer 2SB367 2SB324
    Text: Absolutes maximum ratings Electrical characteristics Ta=25ºC (Ta=25ºC) PartNumber VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob (V) (V) (mA) (mW) (ºC) VCE(V) Ic(mA) (MHz) (pF) 35W 2SB301 -60 -1 75 60 -1.5 -5A 10A (Tc=25ºC) 2SB302 -10 -5 -2 40 85


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    PDF 2SB301 2SB302 2SB303 2SB304 2SB304A 2SB306 2SB309 2SB310 2SB311 2SB312 2sb341 2SB331 2SB400 2SB328 2SB337 2SB383 2SB382 2SB381 st6220 programmer 2SB367 2SB324

    2SB185

    Abstract: 2SB187 2sb22 2sb186 2sb303 2sb342 2SB375A 2SB273
    Text: 3 O g 03 Electrical Characteristics/Ta=25°C Absolute Maximum Ratings/Ta=25°C Vc' bo Veto t VfEH Vkbh I, P, «L I kbo 1<BC> Ve« max VKB max VcK I, - 100- 560 6 lm 110 10 2.2 60- 320 10 10m 130 10 3.2 20 15 /i 6 12/1 1.5 100m - 67-330 - - - - - i : With


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    PDF 2SA1019 25A1047 2SB22 2SB375A 2SB390 2SB391 2SB185 2SB187 2sb186 2sb303 2sb342 2SB273

    GT123

    Abstract: 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT


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    PDF NPN110. NKT103 NKT106 NKT109 2000n 2000n NKT123 NKT129 2G395 GT123 2N2342 2SB123 transistor AD166 ST615 2sc180 dts105 2N234 2N235 2N285

    AD166

    Abstract: 434m 2SB424 KJ2000 KL8503 LT5054 LT5087 2N353 LT5080 TI368
    Text: SY M B O L S & C O D ES E X P L A IN E D 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k IB H H TYPE No. MAX. 1 hFE II MIN. MAX Pc T6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    PDF NPN110. LT5081 100kt LT5082 LT5083 LT5084 LT5085 AD166 434m 2SB424 KJ2000 KL8503 LT5054 LT5087 2N353 LT5080 TI368

    AD166

    Abstract: at08a LT5079 2N463 LT5054 2N1435 s5 100 b101 t027 2N66 b10474
    Text: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    PDF NPN110. LT5081 100kt LT5082 LT5083 LT5084 LT5085 AD166 at08a LT5079 2N463 LT5054 2N1435 s5 100 b101 t027 2N66 b10474

    Tr431

    Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
    Text: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200


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    PDF 25T12 Z1012 Z1014 Z1018 AA138 AA140 AA142 AA200 AA21Q AA300 Tr431 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76

    AD166

    Abstract: 2SB123 transistor 2N1434 ASZ16 LT5085
    Text: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM N PN 110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE II MIN. MAX Pc T6TT


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    PDF MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    st178

    Abstract: diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor
    Text: S Y L V A N IA ECG S e m ic o n d u c to r L in eREPLACES OVER 35,000 TYPES introduction The ECG line of semiconductors is designed to minimize replacement parts inventory for the tech­ nician and yet economically meet replacement needs of the wide variety of entertainment equipment


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    PDF Sylvan58MC 09A001-00 66X0003-001 50746A 68X0003 68X0003-001 T-E0137 93B3-3 93B3-4 st178 diode E1110 CK705 ecg semiconductor replacement guide CS1237 ME1120 TE1088 1N942 1N733A Delco DTG-110B transistor