2SD313
Abstract: 2sd313 equivalent 2SB507 416W
Text: SavantIC Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SD313
O-220C
2SB507
2SD313
2sd313 equivalent
2SB507
416W
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2SB507
Abstract: 2SD313 to25W 416W
Text: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
to25W
416W
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2SB507
Abstract: 2SD313 416W
Text: SavantIC Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD313 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
416W
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2sd313 equivalent
Abstract: 2SB507 2SD313 transistor 2sd313
Text: 2SD313 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC)
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2SD313
O-220
2SB507
2sd313 equivalent
2SB507
2SD313
transistor 2sd313
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TO220C
Abstract: 2SB507 2SD313
Text: JMnic Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier PINNING
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2SB507
O-220C
2SD313
O-220)
TO220C
2SB507
2SD313
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2SB507
Abstract: pnp transistor d 640 TRANSISTOR 2SB507
Text: DC COMPONENTS CO., LTD. 2SB507 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in power amplifier and switching circuits. TO-220AB Pinning 1 = Base 2 = Collector 3 = Emitter .405 10.28 .380(9.66)
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2SB507
O-220AB
-500mA,
100MHz
2SB507
pnp transistor d 640
TRANSISTOR 2SB507
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2SB507
Abstract: 2SD313
Text: Inchange Semiconductor Product Specification 2SB507 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Complement to type 2SD313 ・Low collector saturation voltage APPLICATIONS ・Designed for the output stage of 15W to 25W AF power amplifier
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2SB507
O-220C
2SD313
O-220)
2SB507
2SD313
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2sd313 equivalent
Abstract: 2SD313 2sd313 applications 2SB507
Text: Inchange Semiconductor Product Specification 2SD313 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB507 ·Low collector saturation voltage APPLICATIONS ·Designed for the output stage of 15W to 25W AF power amplifier
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2SD313
O-220C
2SB507
2sd313 equivalent
2SD313
2sd313 applications
2SB507
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TRANSISTOR 2SB507
Abstract: TRANSISTOR AF 416 pnp 2SD313 E 2sd313 equivalent 2SB507 2sd313 applications 2SD313
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB507 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -2.0A ·Complement to Type 2SD313
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2SB507
2SD313
TRANSISTOR 2SB507
TRANSISTOR AF 416 pnp
2SD313 E
2sd313 equivalent
2SB507
2sd313 applications
2SD313
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2SB507
Abstract: 2SD389
Text: 2SD389 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SB507 ABSOLUTE MAXIMUM RATINGS TA=25℃ ℃ Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25℃)
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2SD389
O-220
2SB507
2SB507
2SD389
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2SB507
Abstract: 2sd313 equivalent 2SD313 TRANSISTOR 2SB507
Text: PNP 2SB507 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD313 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25°c)
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2SB507
O-220
2SD313
2SB507
2sd313 equivalent
2SD313
TRANSISTOR 2SB507
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB507 TO-220 TRANSISTOR PNP 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A z DC Current Gain hFE=40~320@IC=-1A z Complementray to NPN 2SD313
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O-220
2SB507
O-220
2SD313
-200mA
-500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507
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O-220
2SD313
O-220
2SB507
200mA
500mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507
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O-220
2SD313
O-220
2SB507
200mA
500mA
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2SD313
Abstract: 2SB507 2sd313 equivalent 2SD313 E
Text: 2SD313 NPN Silicon Epitaxial Power Transistor P b Lead Pb -Free Features: * DC Current Gain hFE = 40-320 @IC = 1.0A * Low VCE(sat) ≤ 1.0V(MAX) @IC = 2.0A, IB = 0.2A * Complememtary to NPN 2SB507 ABSOLUTE MAXIMUM RATINGS (TA=25ºC) Rating COLLECTOR 2 1 BASE
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2SD313
2SB507
O-220
06-Feb-07
O-220
2SD313
2SB507
2sd313 equivalent
2SD313 E
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2SD313
Abstract: 2sd313 equivalent 2SB507
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD313 TRANSISTOR NPN TO-220 1. BASE FEATURES z Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A z DC Current Gain hFE=40~320@IC=1A z Complementray to PNP 2SB507
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O-220
2SD313
O-220
2SB507
200mA
500mA
2SD313
2sd313 equivalent
2SB507
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD313 NPN TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features 1 3 2 Low Collector-Emitter Saturation Voltage Vce(sat)=1V(MAX)@IC=2A,IB=0.2A DC Current Gain hFE=40~320@IC=1A Complementray to PNP 2SB507 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SD313
O-220
O-220
2SB507
200mA
500mA
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transistor 2sb507
Abstract: 2SB507 2SB507 npn transistor
Text: 2SB507 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 3. EMITTER Features 1 2 3 Low Collector-Emitter Saturation Voltage Vce(sat)=-1V(MAX)@IC=-2A,IB=-0.2A DC Current Gain hFE=40~320@IC=-1A Complementray to NPN 2SD313 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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2SB507
O-220
O-220
2SD313
-100A,
-10mA,
-200mA
-500mA
transistor 2sb507
2SB507 npn transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Products Search Home Products Category About Us Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS
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O-126
O-126
O-220
TIP32C
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TRANSISTOR B507
Abstract: TRANSISTOR d313 D313 amplifier SD313 Sanyo D313 D313 VOLTAGE REGULATOR D313 power amplifier D313 for amplifier power supply with regulator D313 2SC1175 transistor
Text: SANYO SEMICONDUCTOR CORP 12E D | 7Ti7D7ti 0004007 T - 33- 2SD313, 3 1 4 • 2012 201 oA 2SB507, 508 NPN/pnp Triple Diffused Planar Silicon Transistors Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.
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T-33-^
2SB507,
2SB507
2SB508
2SD313
2SD314
2SB508,
2SD314,
TRANSISTOR B507
TRANSISTOR d313
D313 amplifier
SD313
Sanyo D313
D313 VOLTAGE REGULATOR
D313 power amplifier
D313 for amplifier
power supply with regulator D313
2SC1175 transistor
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Sanyo D313
Abstract: transistor D313 TRANSISTOR B507 2SD313 D314 transistor d313 transistor SD313 D313 for amplifier TRANSISTOR NPN D313 D313 amplifier
Text: SANYO SEMICONDUCTOR CORP 12 E D | 7Ti7D7Li 0004ÛÛ7 S | T-3 2SD313, NPN/pnp Triple Diffused Planar • 3 1 4 201 oA 2SB507, 508 3 - Silicon Transistors 2012 Low Frequency Power Amp Applications 396E .2SB507,2SB508 and 2SD313,2SD314 are complementary pairs respectively.
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2SB507,
2SB507
2SB508
2SD313
2SD314
2SB508,
2SD314,
Sanyo D313
transistor D313
TRANSISTOR B507
D314 transistor
d313 transistor
SD313
D313 for amplifier
TRANSISTOR NPN D313
D313 amplifier
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PDF
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2SD313
Abstract: 2SB507 transistor 2sd313
Text: ÆàMOS PEC NPN SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEA TU RES: * Low Collector-Emitter Saturation Voltage VcE satf 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to PNP 2SB507
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2SB507
2SD313
2SD313
2SB507
transistor 2sd313
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2SD313
Abstract: 2SB507 to220aa 2SD314 2sb507 sanyo TRANSISTOR 2SB507 transistor 2sd313 280314 2SB508 2SD31
Text: TEN FOUR LTD. 1535 Alps Road W AYNE. NEW JERSEY 07470 TWX 7'?0 •''PS.07Q 3 SANYO SEMICONDUCTOR SANYO 2SB507.508 2SD313.314 2SB507,508_ Planar Type Silicon Transistor 2SD31 3,314 For AF Power Amplifier Use .2 S B 5 0 7 ,2SB508 an d 2 S D 3 1 3 ,2SD314 are c o m p l e m e n t a r y p a i r s respectively.
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2SB507
2SD313
2SD31
2SB508
2SD314
2SB508,
to220aa
2sb507 sanyo
TRANSISTOR 2SB507
transistor 2sd313
280314
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PDF
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2SB507
Abstract: 2SB507 npn transistor 2SD313 TRANSISTOR AF 416 pnp
Text: ÆàMOS PEC PNP SILICON POWER TRANSISTORS .designed for the output stage of 15W to 25W AF power amplifier FEATURES: * Low Collector-Emitter Saturation Voltage v CE sat r 1 OV(Max @ I c=2.0A,Ib=0.2A * DC Current Gain hFE= 40-320@lc= 1.0A * Complementary to NPN 2SD313
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2SD313
2SB507
2SB507 npn transistor
2SD313
TRANSISTOR AF 416 pnp
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