2SB621A

Abstract: 2SB621 2SD592 2SD592A
Contextual Info: 2SD592,A SILICON TRANSISTORS TO-92 2SB621,A P N P & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. •»I ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage Emittter-Base Voltage

BSW45A

Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). High transition frequency fT.

2SD592

Abstract: 2SD592A transistor 2SD592a 2SB621 2SB621A
Contextual Info: Transistor 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB621 and 2SB621A Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE sat . • Absolute Maximum Ratings

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: Transistors 2SD0592A 2SD592A Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat)

2SB621

Abstract: 2SB621A 2SD592 2SD592A
Contextual Info: Transistor 2SB621, 2SB621A Silicon PNP epitaxial planer type For low-frequency output amplification Complementary to 2SD592 and 2SD592A Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . High transition frequency fT. • Absolute Maximum Ratings

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SD0592, 2SD0592A 2SD592, 2SD592A Silicon NPN epitaxial planer type For low-frequency output amplification Complementary to 2SB0621 (2SB621) and 2SB0621A (2SB621A) Unit: mm 5.0±0.2 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat).

2SB1099

Abstract: 1115a 2sB1098 NEC 2SA1441 2SB873 1116a 2SB927 2SA1770 2SA1283 nec 2SB1099
Contextual Info: - « Type No. tt « Mamif. 2SB 1114 -• 2SB 1115 „ Hi TOSHIBA Z £ MITSUBISHI ZSA1213 2SB10Q1 2SB956 2SB1188 2SB1122 2SA12Q1 2SB1002 2SB766A 2SB1260 2SA1213 2SB1Q02 2SB766A 2SA1315 2SB1059 2SB621A 2SA1283 2SB1459 2SB621A 2SA1283 S S « 2SB 1117 ^ S « 2SB 1118

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A
Contextual Info: Transistor 2SB0621, 2SB0621A 2SB621, 2SB621A Silicon PNP epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SD0592 (2SD592) and 2SD0592A (2SD592A) 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector to emitter saturation voltage VCE(sat)

Contextual Info: Transistors 2SD0592 2SD592 Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2  Large collector power dissipation PC  Low collector-emitter saturation voltage VCE(sat)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2  Large collector power dissipation PC

Contextual Info: J M mm ¡¡¡f ! 2SB621.A 2SD592,A rB Hl I SILICON TRANSISTORS T O -9 2 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for AF output amplifiers. ECB ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltage

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A SC-43A
Contextual Info: Transistor 2SD0592A 2SD592A Silicon NPN epitaxial planar type Unit: mm For low-frequency output amplification Complementary to 2SB0621A (2SB621A) 4.0±0.2 5.1±0.2 5.0±0.2 • Large collector power dissipation PC • Low collector to emitter saturation voltage VCE(sat)

IC tl 072

Abstract: 2SB0621 2SB621 2SD0592 2SD592
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ue pl d in ea an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2  Large collector power dissipation PC

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB0621 (2SB621), 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 • Features 0.7±0.2 M Di ain

2SB0621A

Abstract: 2SB621A 2SD0592A 2SD592A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 0.7±0.1 • Absolute Maximum Ratings Ta = 25°C

2SB0621

Abstract: 2SB0621A 2SB621 2SB621A 2SD0592 2SD0592A 2SD592 2SD592A SC-43A
Contextual Info: Transistors 2SB0621 2SB621 , 2SB0621A (2SB621A) Silicon PNP epitaxial planar type For low-frequency driver amplification Complementary to 2SD0592 (2SD592), 2SD0592A (2SD592A) Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • Low collector-emitter saturation voltage VCE(sat)

2SD592

Abstract: 2SB621 2SB621A 2SD592A
Contextual Info: 2SB621,A 2SD592,A k. ' . ; •’■;■■ ■,} > '•■ 5?# K V - - . ;-; ’ « ' 5 sT; fv s-V-Îï ” ■-'i, SILICON TRANSISTORS TO-92 . ■ í í /*:■■? V~- 2SB621,A PNP & 2SD592,A (NPN) are complementary silicon planar epitaxial transistors designed for

2SB0621

Abstract: 2SB621 2SD0592 2SD592
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592 (2SD592) Silicon NPN epitaxial planar type For low frequency amplification Complementary to 2SB0621 (2SB621) Unit: mm 5.0±0.2 4.0±0.2 5.1±0.2 ue pl d in ea an c se ed lud

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) Unit: mm 4.0±0.2 5.1±0.2 M Di ain sc te on na tin nc