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    2SB63 Search Results

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    2SB63 Price and Stock

    Rochester Electronics LLC 2SB633E

    Power Bipolar Transistor, 6A, 85
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    DigiKey 2SB633E Bulk 900
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    Rochester Electronics LLC 2SB631E

    SMALL SIGNAL BIPOLAR TRANS PNP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB631E Bulk 1,110
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    Rochester Electronics LLC 2SB631KF

    PNP SILICON TRANSISTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2SB631KF Bulk 1,110
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    Rochester Electronics LLC 2SB637KC93

    BIPOLAR PNP TRANSISTOR
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    DigiKey 2SB637KC93 Bulk 1,353
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    Rochester Electronics LLC 2SB637KC93TZ

    BIPOLAR PNP TRANSISTOR
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    DigiKey 2SB637KC93TZ Bulk 1,082
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    2SB63 Datasheets (190)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SB63 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB63 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB63 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB63 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2SB63 Unknown Vintage Transistor Datasheets Scan PDF
    2SB63 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB63 Unknown Discontinued Transistor Data Book 1975 Scan PDF
    2SB63 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SB63 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SB63 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2SB63 Unknown Cross Reference Datasheet Scan PDF
    2SB630 Fuji-SVEA Japanese 2S Transistor Cross Reference Datasheet Scan PDF
    2SB630 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SB630 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2SB630 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SB630 Unknown NPN/PNP Silicon Triple Diffused Transistor Scan PDF
    2SB630 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SB630 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SB630 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SB630 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    ...

    2SB63 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SB631

    Abstract: 2SB631K
    Text: JMnic Product Specification 2SB631 2SB631K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD600/K ・High breakdown voltage VCEO:-100/-120V ・High current: -1A ・Low saturation voltage,excellent hFE linearity


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    2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2SB631K PDF

    D612K

    Abstract: D612 transistor B632K transistor b632k TRANSISTOR D612 D612 k 2SB632 D612 2SB632K d612k to126
    Text: Ordering number:341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]


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    2SB632, 632K/2SD612, 5V/35V, 2009B O-126 2SB632K, D612K D612 transistor B632K transistor b632k TRANSISTOR D612 D612 k 2SB632 D612 2SB632K d612k to126 PDF

    2SB634

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification 2SB634 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High power dissipation APPLICATIONS ·For low frequency power amplifier applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector


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    2SB634 -30mA -120V; 2SB634 PDF

    2SD610

    Abstract: 2SB630 200 watt audio ic
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB630 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -200V(Min) ·Complement to Type 2SD610 APPLICATIONS ·Audio frequency power amplifier applications. ·Suitable for driver of 200~300 watts audio amplifier.


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    2SB630 -200V 2SD610 -50mA -150V; 2SD610 2SB630 200 watt audio ic PDF

    2SB631K

    Abstract: 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE
    Text: 2SB631K SPICE PARAMETER PNP Bipolar Transistor model : Gummel-Poon Parameter Value IS 195.0f NF 1 IKF 555.0m NE 2 NR 1 IKR 75.00m NC 2 IRB 20.00m RE 127.0m XTB XTI 3 VJE 700.0m TF 2n VTF 10 PTF VJC 550.0m XCJC 1 FC 500.0m AF 1 Temp = Date : Unit A A A A Ohm


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    2SB631K 2SB631K 2sb631* transistor Spice Parameter, 2N, Bipolar Transistor MJE-360 nc 555 2SB631K-SPICE PDF

    2SD617

    Abstract: transistors 13001 633P 2SB633 2SB633P 2SD613P 613P
    Text: Ordering number : ENN6662 2SB633P/2SD613P PNP / NPN Epitaxial Planar Silicon Transistors 2SB633P / 2SD613P 85V / 6A, AF 35 to 45W Output Applications Features Package Dimensions High breakdown voltage, VCEO 85V, high current 6A. • AF 35 to 45W output. unit : mm


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    ENN6662 2SB633P/2SD613P 2SB633P 2SD613P 2010C 2SD613P] 2SB633P O-220 2SD617 transistors 13001 633P 2SB633 2SD613P 613P PDF

    BSW45A

    Abstract: LOW-POWER SILICON PNP p60n 2SA1299E BC212BP
    Text: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 BC212LA BCW86 BCW86 BCW86 2SB637K 2SB710A 2SA891 2SA891 2SA891 2SB621A >= Manufacturer V(BR)CEO fr (V) (Hz) See Index Micro Elecs Semi Inc Advncd Semi


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    BC212LA BCW86 2SB637K 2SB710A 2SA891 2SB621A BSW45A LOW-POWER SILICON PNP p60n 2SA1299E BC212BP PDF

    transistor D600k

    Abstract: transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor 2SB631 transistor B631K k b631k
    Text: Ordering number:ENN346G PNP/NPN Epitaxial Planar Silicon Transistor 2SB631,631K/2SD600,600K 100V/120V, 1A Low-Frequency Power Amplifier Applications Features Package Dimensions • High breakdown voltage VCEO 100/120V, High current 1A. · Low saturation voltage, excellent hFE linearity.


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    ENN346G 2SB631 631K/2SD600 00V/120V, 100/120V, 2009B 2SB631, 631K/2SD600, O-126 transistor D600k transistor d600 D600K D600k transistor transistor b631 b631k b631 transistor transistor B631K k b631k PDF

    2SB632K

    Abstract: 2SB632
    Text: JMnic Product Specification 2SB632 2SB632K Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD612/612K ・High collector dissipation ・Wide ASO Safe Operating Area APPLICATIONS ・25V/35V, 2A low-frequency power amplifier applications


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    2SB632 2SB632K O-126 2SD612/612K 5V/35V, 2SB632 -50mA 2SB632K PDF

    2SD612

    Abstract: 2SD612K
    Text: Inchange Semiconductor Product Specification 2SD612 2SD612K Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB632/632K ·High collector dissipation ·Wide area of safe operation APPLICATIONS ·25V/35V, 2A low-frequency power


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    2SD612 2SD612K O-126 2SB632/632K 5V/35V, 2SD612 500mA 2SD612K PDF

    2SB633

    Abstract: 513H 2SD613
    Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


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    2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 2SB633 513H 2SD613 PDF

    2sb631 transistor

    Abstract: 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631 DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-100V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600


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    2SB631 -100V 2SD600 -50mA -500mA 2sb631 transistor 2sd600* transistor 2SB631 2SD600 high gain low voltage PNP transistor transistor 2sb631 transistor PNP 10A PDF

    2SB631K

    Abstract: 2SD600K
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB631K DESCRIPTION •High Collector Current-IC=-1.0A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD600K


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    2SB631K -120V 2SD600K -500mA; -50mA -500mA 2SB631K 2SD600K PDF

    2SD613

    Abstract: 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D
    Text: SavantIC Semiconductor Product Specification 2SD613 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB633 ·High breakdown voltage :VCEO=85V ·High current 6A APPLICATIONS ·Recommend for 25-35W high fidelity audio frequency amplifier output stage


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    2SD613 O-220C 2SB633 5-35W 2SD613 2SD613 equivalent 2SD613 datasheet 2SB633 2SD613 D PDF

    2sb631

    Abstract: 2sb631k
    Text: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB631 2SB631K DESCRIPTION •With TO-126 package ·Complement to type 2SD600/K ·High breakdown voltage VCEO:-100/-120V ·High current: -1A ·Low saturation voltage,excellent hFE linearity


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    2SB631 2SB631K O-126 2SD600/K -100/-120V 2SB631 -50mA 2sb631k PDF

    transistor 2sB633

    Abstract: 2sd613 2SB633 513H 2sb633 sanyo
    Text: Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features Package Dimensions • High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output. unit:mm 2010C [2SB633/2SD613] JEDEC : TO-220AB


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    2SB633/2SD613 VCEO85V, 2010C 2SB633/2SD613] O-220AB SC-46 2SB633 transistor 2sB633 2sd613 2SB633 513H 2sb633 sanyo PDF

    S3V77

    Abstract: 200W TRANSISTOR AUDIO AMPLIFIER 2SD610 2SB630 300W TRANSISTOR AUDIO AMPLIFIER 300w amplifier Q100 200w audio power amplifier 251C 200w silicon audio power transistor
    Text: 2SD 610/2SB630 2SD610/2SB630 N P N /P N P h7 'J a v N P N /P N P S IL IC O N TRIPLE D IFFU S ED T R A N S IS T O R Frequency Pow er A m p lifie r ft ^ /F E A T U R E S •^ ffl^ /2 0 0 W ~ 3 0 0 W i« ^ X r U * '< V - 7 V 7"CO K 5 < '<&t I X M M ° Suitable for driver of 200 to 300 watts audio amplifier.


    OCR Scan
    2SD610 2SB630 2SD610/2SB630 2SB630 cleS50% 2SB630/2SD S3V77 500mA* 500mA, 200W TRANSISTOR AUDIO AMPLIFIER 300W TRANSISTOR AUDIO AMPLIFIER 300w amplifier Q100 200w audio power amplifier 251C 200w silicon audio power transistor PDF

    PFKI

    Abstract: 2SD629 2SB639 2SB639H b639
    Text: 2SB639H □ nn • a * * « « * '-JZ “- PNPXf9*S/-rJl>m S IL IC O N P N P E P IT A X IA L L O W F R E Q U E N C Y P O W E R A M P L IF IE R C o m p le m e n ta ry p a ir w ith 2 S D 6 2 9 2 S D 6 2 9 ® ¿ 3 > ? iJ * ' s f t i j ' * - ? 1. "< — Z. '■B a se


    OCR Scan
    2SB639H 2SD629 --50mA, --10mA* -100V --80V, PFKI 2SD629 2SB639 2SB639H b639 PDF

    2SB823

    Abstract: No abstract text available
    Text: •a u 3 Discontii Package Larger FP 2SB544|P2 Larger FP Larger 2SB559 L F Power Amp, Medium Speed Switching FP 2SBS60 FP 2SB598 FP Electronic Governor DC* DC Converter, 1W Sound Output 2SB633P L F Power Amp, 25 to 3SW Output 2SB634 L F Power Amp 2SB544 M P )


    OCR Scan
    2SB544 2SB559 2SBS60 2SB598 2SB633P 2SC426 2SC536 2SB1037 2SB991 2SB823 PDF

    2SB641 r

    Abstract: 2sb641 2SD659 2SD689 2SB603 2sb678 2SB647B 2SB646A 2SB646 2SB686
    Text: - 56 - Ta=25‘ C , * E P f i T c = 2 5 eC m £ % 2SB603 B M HV LS SW 2SB605 B M V cB O VcEO (V) (V) ic (D O (A) -500 -500 -0. 5 L F PA -60 -50 -0. 7 LF A -30 -2 5 -1 LF A -60 -5 0 -1 2SB624 fö T B iS LF A -30 -25 2SB631 H # IF PA/MS SW -100 2SB631K H #


    OCR Scan
    2SB603 2SB605 2SB621 2SB621A 2SB624 2SB631 -0B648 2SD668A O-126) 2SB648A 2SB641 r 2sb641 2SD659 2SD689 2sb678 2SB647B 2SB646A 2SB646 2SB686 PDF

    d613

    Abstract: D613 voltage 2SD613 2SB633 513H 2sb633 sanyo
    Text: O rd e rin g n u m b e r: EN513H 2SB633/2SD613 No.513H PNP/NPN Epitaxial Planar Silicon Transistors SAftfYO i 85V/6A, AF 25 to 35W Output Applications F eatu re s • High breakdown voltage V ceo^SV, high current 6A. • AF25 to 35W output. : 2SB633 A bsolute M axim um R atings at Ta = 25C,C


    OCR Scan
    EN513H 2SB633/2SD613 2SB633 40VfIE d613 D613 voltage 2SD613 2SB633 513H 2sb633 sanyo PDF

    2SB1099

    Abstract: 2SB615 nec 2SB1099 2SB886 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613
    Text: 62 - « tt m Type No. € Manuf. a SANYO NEC 2SB601 □—A 2SA1706 2SB 1077 a ti 2SB880 2SB676 2SB 1078 XL 2SB886 2SB673 2SB 1078K xz: 2SB 1080 a a 2SB 1085 □— a 2SB 1085A 2SB 1086 ^ & 2SB632K 2SA962A 2SA1011 2SA968 □— A 2SA1011 □— A 2SA1249 2SB 1Q86A


    OCR Scan
    2SA1706 2SB880 2SB676 2SB601 2SB950 2SB1341 2SB886 2SB673 2SB1108 2SB1343 2SB1099 2SB615 nec 2SB1099 B676 1086a 1091 2S8834 2sb536 TOSHIBA 2SB613 PDF

    2SB415

    Abstract: sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661
    Text: - 46 - S € Type No. tt V - - 2SB 521 „ 2SB 522 a € Maniif. , SANYO T O SHIBA a NEC a b HITACHI * ± a F U J ITSU fâ T MATSUSHITA □ MITSUBISHI — A ROHM 2SB507 2SB596 2SB856 2SB1291 2SB508 2SB596 LB 2SB856 2SB1291 2SA1069 2 SB 523 , = S 2SB632 2SB596


    OCR Scan
    2sb507 2sb596 2sa1069 2sb856 2sb1291 2sb508 2sb632 2SB415 sanyo 2sb509 NEC B 536 2sb631 hitachi 2SA1284 2sa966 2SB631 2SB557 TOSHIBA 2SA934 2SB661 PDF

    2sc536

    Abstract: B632K d612k 2sc1175 8Q transistor d612 2SB632 2SB632K 341G 2SB6
    Text: Ordering' number; EN341G 2SB632.632K/2SD612.612K N 0 .3 4 IG PNP/NPN Epitaxial Planar Silicon Transistors SAXYO i 25V/35V, 2A Low-Frequency Power Amp Applications F eatures • High collector dissipation and wide ASO. : 2SB632,632K A b solu te M axim um R atings at Ta = 25°C


    OCR Scan
    EN341G 2SB632 632K/2SD612 5V/35V, 2SB632, 2SB632K, D612K 10hAJe 2sc536 B632K d612k 2sc1175 8Q transistor d612 2SB632K 341G 2SB6 PDF