sot89 TRANSISTOR MARKING AV

Abstract: 640 smd transistor marking ma2580 SmD TRANSISTOR av smd transistor marking Av aW sot89 2SB804 smd transistor marking 26 hFE CLASSIFICATION Marking marking AW
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB804 Features World standard miniature package:SOT-89 High collector to base voltage:VCBO -100V Excellent DC current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage

Contextual Info: Product specification 2SB806 ＳＯＴ－８９ Ｕｎｉｔ：ｍｍ １．５０ ±０．１ ４．５０±０．１ １．８０±０．１ ２． ５０ ±０ ．１ ４． ００ ±０ ．１ • Features ● High collector to emitter voltage: VCEO＞-120V.

Contextual Info: Product specification 2SB800 Features World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage VCEO -80

Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB806 ＳＯＴ－８９ Ｕｎｉｔ：ｍｍ １．５０ ±０．１ ４．５０±０．１ １．８０±０．１ ２． ５０ ±０ ．１ ４． ００ ±０ ．１ • Features ● High collector to emitter voltage: VCEO＞-120V.

2SD1028

Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A

2SB608

Abstract: 2SC536 DS442X 2SD1012F 2SA608 2SC536E transistor 2sa608 sanyo 2SC536e 2SD1012 2SA60
Contextual Info: j Ordering number: EN 676D 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors N0.676D Low-Voltage Large-Current _ Amp Applications 2SB808 Absolute Maximum Ratings at Ta=25 C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage

2SB807

Abstract: 2SD1009 2SD100 j y w marking mini class t amplifier MARKING 5 Y
Contextual Info: 2SB807 b - ^ y V 7 .S 2SB807 '> U zj v PNP x kf^f +'> t PNP Epitaxial Planar ïÉïiiiÎîfÆffi^Tia^fëffl/High Voltage Low-noise Amplifier 2SD1009£ ] /Complementary Pair with 2SD1009 Unit ^ mm 4.6max. 1.8max.i • # ^ /F eatu res *<m9 *r*05 - j • u v 9 9 * -x. = -y 9 W ± . Vceo ^ S ^ 'o / H i g h V CE0

MEI-1202

Abstract: 2SB800 2SD1001 IEI-1213 MF-1134 TC-5473B marking lp nec sot89
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB 800 is designed for audio frequency power am plifier application, especially in Hybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

2SC536E

Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

2S880

Abstract: 2S8805 baw 92 2SB805
Contextual Info: SILICON TRA N SISTO R S 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T he 2SB805 and 2SB806 are designed f o r audio freq uency pow er a m p lifie r app lication, especially in H y b rid Integrated Circuits. FEA TU RES • W orld Standard M in ia tu re Package :

SMD TRANSISTOR FL

Abstract: smd transistor fl pnp SMD FM IC 2SB800 SMD transistor Marking fk MARKING FM
Contextual Info: Transistors SMD Type PNP Silicon Epitaxial Transistor 2SB800 Features World standard miniature package:SOT-89 High collector to emitter voltage:VCEO -80V Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -80 V Collector to emitter voltage

2SA114

Abstract: 2SA912 2SA554 MALLORY 150 BSW23 2sb807 2sa1285af LOW-POWER SILICON PNP 2sb788 2SA119
Contextual Info: RF LOW-POWER SILICON PNP Item Number Part Number V BR CEO 5 10 PTC103 A5T3498 2N3494 2N3498 MMBT8599 HSE175 BCX28 BC558B BCX35 PTC127 ~~~1b71 15 20 2SA1285E 2SA1285F 2SA1285G 2SB788 SOR5400 (A) 2SA1145 2SA912 2SA11450 ~~~~~~~XE 25 2SA1123 2SB792 2SB807 2SA1285AF

2SD1012

Abstract: 2SA608 transistor 2sa608 2SB808
Contextual Info: Ordering number:676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033 [2SB808/2SD1012] B : Base C : Collector E : Emitter : 2SB808 Specifications SANYO : SPA Absolute Maximum Ratings at Ta = 25˚C

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SB800 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SB800 is designed fo r audio frequency power a m plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE D IM ENSIONS

Contextual Info: | Ordering number: EN 6 7 6 P SA%YO i l _ 2SB808/2SD1012 PNP/ NPN Epitaxial Planar Silicon Transistors No.676D Low-Voltage Large-Current _Amp Applications : 2SB808 Ta=25 °C C o lle c to r to Base V o ltag e vCBO C o lle c to r to E m itte r V o ltag e

2sd1006-hk

Abstract: 2SD1007 2SB806 2SD1006 sot89 transistor JB 9e sot-89 2SD1007-HP SK FN 521
Contextual Info: NEC '> > ; = ! > h =7 > i> 7 . 9 S ilic o n T ra n s is to r 2SD1006,1007 o ^ -fv 7 4 ' < / r ^ 7 \ v ° -7 ^ iz y 2 S B 8 0 6 t = ¡ > 7 ° ' 9 > 9 U 0 O 2SB805, 1.5 + 0.1 * Ê # Ît* Æ :fê T a = 25 °C) 2SD1006 2SD1007 # »§• -t til m i 3 v- 9 9 ■

Contextual Info: Product specification 2SB805 Features High collector to emitter voltage: VCEO -100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -5 V IC -0.7

2SB805

Abstract: 2SB806 2SD1006 2SD1007 2SB806-KP
Contextual Info: S ilic o n T ra n s is to rs 2SB805/2SB806 P N P i m i; =1 > h ^ + it o o -t —r ' 4 tfè,Ts-^> K y -i '</T ^ F 7 ” -y l ' i c S i S T - t o 2 S D 1 0 0 6 , 2 S D 1 0 0 7 t=i>y" 'S 9 > 9 ' T to T a = 2 5 °C ) m § 99 I V • - î — »§• x a V 9 9 ■ x- l ~y 9 FbTÜJÎ

2S880

Abstract: 2SB805 kp 3z 2SB806 2SD1006 2SD1007 TC547
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB805 and 2SB806 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package :

Contextual Info: fVEC SILICON TRANSISTOR ElfCTR 0ND EV IC 2SB804 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIOI The 2SB804 designed fo r audio frequency power a m plifier application, especially in H ybrid Integrated Circuits. FEATURES • W orld Standard M iniature Package

A249

Contextual Info: DATA SHEET NEC / SILICON TRANSISTORS 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DE SC R IPTIO N T he 2SB805 and 2SB806 are designed fo r audio frequency pow er a m p lifie r app lication, especially in H y b rid Integrated Circuits. FE A TU R E S

Contextual Info: Product specification 2SB804 Features World standard miniature package:SOT-89 High collector to base voltage:VCBO -100V Excellent DC current gain linearity. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -100 V

2SC536E

Abstract: 2SA608e 2SC536E,F sanyo 2SC536e 2sd1100 2SB808 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

Contextual Info: Data Sheet N0801R R07DS0728EJ0100 Rev.1.00 Mar 30, 2012 PNP SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801S. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SB804: Package variation of 3pPoMM) PRODUCT LINEUP Part Number