2SB834L
Abstract: utc 2sb834L 2SB834 2SB83 2sb834 transistor
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ORDERING INFORMATION Normal 2SB834-x-T60-K 2SB834-x-TA3-T 2SB834-x-TF3-T
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2SB834
2SB834L
2SB834G
2SB834-x-T60-K
2SB834-x-TA3-T
2SB834-x-TF3-T
2SB834L-x-T60-K
2SB834L-x-TA3-T
2SB834L-x-TF3-T
2SB834G-x-T60-K
2SB834L
utc 2sb834L
2SB834
2SB83
2sb834 transistor
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Untitled
Abstract: No abstract text available
Text: 2SB834 -3A , -60V PNP Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES ITO-220J Power switching applications B N D E CLASSIFICATION OF hFE Product-Rank 2SB834-O 2SB834-Y
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2SB834
ITO-220J
2SB834-O
2SB834-Y
-50mA,
-500mA
-500mA,
14-Aug-2012
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2SB834
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD 2SB834 PNP SILICON TRANSISTOR H I GH V OLT AGE T RAN SI ST OR ̈ DESCRI PT I ON Low frequency power amplifier applications. Lead-Free: 2SB834L Halogen Free: 2SB834G ̈ ORDERI N G I N FORM AT I ON Normal 2SB834-x-T60-K 2SB834-x-TA3-T
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2SB834
2SB834L
2SB834G
2SB834-x-T60-K
2SB834-x-TA3-T
2SB834-x-TF3-T
2SB834L-x-T60-K
2SB834L-x-TA3-T
2SB834L-x-TF3-T
2SB834G-x-T60-K
2SB834
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2SB834L
Abstract: 2SB834 utc 2sb834L 2SB83
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. *Pb-free plating product number: 2SB834L ORDERING INFORMATION Ordering Number Normal Lead Free Plating 2SB834-x-T60-K
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2SB834
2SB834L
2SB834-x-T60-K
2SB834L-x-T60-K
2SB834-x-TA3-T
2SB834L-x-TA3-T
O-126
O-220
QW-R204-018
2SB834L
2SB834
utc 2sb834L
2SB83
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2sb834 transistor
Abstract: 2SB834
Text: 2SB834 2SB834 TRANSISTOR PNP TO-220 FEATURES Power dissipation PCM: 1. BASE 2. COLLECTOR 1.5 W (Tamb=25℃) 3. EMITTER Collector current ICM: -3 A Collector-base voltage -60 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SB834
O-220
-50mA,
-500mA
2sb834 transistor
2SB834
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UTC2SB834
Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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2SB834
O-220
QW-R203-014
UTC2SB834
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2sd880 equivalent
Abstract: 2SD880 2sd880 datasheet 2SB834
Text: Inchange Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors • DESCRIPTION ·With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications
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2SD880
O-220C
2SB834
10IB1
-10IB2
2sd880 equivalent
2SD880
2sd880 datasheet
2SB834
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2SB834
Abstract: 2SD880
Text: JMnic Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to
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2SB834
O-220
2SD880
2SB834
2SD880
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2SB834
Abstract: 2sb834 equivalent 2sd880 equivalent 2SD880
Text: Inchange Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION ・With TO-220 package ・Low collector saturation voltage ・Complement to type 2SD880 APPLICATIONS ・Audio frequency power amplifier PINNING PIN DESCRIPTION 1
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2SB834
O-220
2SD880
2SB834
2sb834 equivalent
2sd880 equivalent
2SD880
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Untitled
Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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2SB834
O-220
QW-R203-014
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2sd880 equivalent
Abstract: 2SD880 2SB834
Text: 2SD880 NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER ! TO-220 Complement to 2SB834 ABSOLUTE MAXIMUM RATINGS TA=25oC Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation (Tc=25oC)
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2SD880
O-220
2SB834
2sd880 equivalent
2SD880
2SB834
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2SB834
Abstract: 2SD880
Text: SavantIC Semiconductor Product Specification 2SB834 Silicon PNP Power Transistors DESCRIPTION •With TO-220 package ·Low collector saturation voltage ·Complement to type 2SD880 APPLICATIONS ·Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter
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2SB834
O-220
2SD880
2SB834
2SD880
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2SD880
Abstract: 2sd880 equivalent 2SB834 416W
Text: SavantIC Semiconductor Product Specification 2SD880 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SB834 ·Low collector saturation voltage APPLICATIONS ·Designed for use in audio frequency power amplifier applications
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2SD880
O-220C
2SB834
10IB1
-10IB2
2SD880
2sd880 equivalent
2SB834
416W
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UTC2SB834
Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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2SB834
O-126
QW-R204-018
UTC2SB834
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2sd880 equivalent
Abstract: 2SB834 2SD880 2sD880 TRANSISTOR
Text: PNP 2SB834 EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 ! Complement to 2SD880 ABSOLUTE MAXIMUM RATINGS Ta=25°C C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation(Tc=25°C)
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2SB834
O-220
2SD880
2sd880 equivalent
2SB834
2SD880
2sD880 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: UTC 2SB834 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. 1 TO-126 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Operating temperature range applies unless otherwise specified
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2SB834
O-126
QW-R205-018
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SB834L-x-AB3-R 2SB834G-x-AB3-R 2SB834L-x-T60-K
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2SB834
2SB834L-x-AB3-R
2SB834G-x-AB3-R
2SB834L-x-T60-K
2SB834G-x-T60-K
2SB834L-x-TA3-T
2SB834G-x-TA3-T
2SB834L-x-TF3-T
2SB834G-x-TF3-T
OT-89
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-220
2SD880
O-220
2SB834
500mA
300mA
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2SB834
Abstract: 2SD880 2sb834 transistor
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB834 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -60V(Min) ·Low Collector-Emitter Saturation Voltage: VCE(sat)= -1.0V(Max) @IC= -3.0A ·Complement to Type 2SD880
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2SB834
2SD880
-500mA;
2SB834
2SD880
2sb834 transistor
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A
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O-220
2SB834
2SD880
-500mA
-500mA,
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utc 2sb834L
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB834 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION Low frequency power amplifier applications. ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free SOT-89 2SB834L-x-AB3-R 2SB834G-x-AB3-R
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2SB834
OT-89
2SB834L-x-AB3-R
2SB834G-x-AB3-R
2SB834L-x-T60-K
2SB834G-x-T60-K
O-126
2SB834L-x-TA3-T
2SB834G-x-TA3-T
O-220
utc 2sb834L
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2sd880 equivalent
Abstract: 2SD880, 1.5 power dissipation 2SB834 2SD880 2sD880 TRANSISTOR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SD880 TRANSISTOR NPN TO-220 FEATURES z Low frequency power amplifier z Complement to 2SB834 1. BASE 2. COLLECTOR 3. EMITTER 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-220
2SD880
O-220
2SB834
500mA
300mA
2sd880 equivalent
2SD880, 1.5 power dissipation
2SB834
2SD880
2sD880 TRANSISTOR
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2sb834
Abstract: 2sb834 transistor 2SB834 TOSHIBA 2SD880
Text: TO SH IBA 2SB834 TOSHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS 2SB834 Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. • • • Low Collector Saturation Voltage : v CE(sat)= -1.0V (Max.) at IC= -3 A , IB = -0.3A Collector Power Dissipation
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OCR Scan
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2SB834
2SD880.
200jury
2sb834
2sb834 transistor
2SB834 TOSHIBA
2SD880
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Untitled
Abstract: No abstract text available
Text: 2SB834 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER *Compkmntaryto 2SD880 ABSOLUTE MAXIMUM RATINGS a t T airfW fV Characteristic Symbol Rating Vcbo Collector-Base Voltaae
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2SB834
2SD880
-50mA
-500mA
-300mA
-10VIe
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