D1220
Abstract: 2sd1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
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2SD1220
2SB905
D1220
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B905
Abstract: SD1220 2SB905
Text: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage
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2SB905
SD1220
B905
SD1220
2SB905
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D1220
Abstract: 2sd1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
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2SD1220
2SB905
D1220
2sd1220
2SB905
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Untitled
Abstract: No abstract text available
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
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2SD1220
2SB905
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B905
Abstract: SD1220 2SB905
Text: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage
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2SB905
SD1220
B905
SD1220
2SB905
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D1220
Abstract: 2SB905 2SD1220
Text: 2SD1220 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SD1220 ○ 電力増幅用 • 単位: mm 2SB905 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
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2SD1220
2SB905
D1220
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2SD1220
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2SD1220
Abstract: D1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
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2SD1220
2SB905
2SD1220
D1220
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2SB905
Abstract: B905 2SD1220
Text: 2SB905 東芝トランジスタ シリコンPNPエピタキシャル形 PCT方式 2SB905 ○ 電力増幅用 • 単位: mm 2SD1220 とコンプリメンタリになります。 絶対最大定格 (Ta = 25°C) 項 目 記 号 定 格 単位 コ レ ク タ • ベ ー ス 間 電 圧
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2SB905
2SD1220
20070701-JA
2SB905
B905
2SD1220
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SD1220
Abstract: 2SB905 B905
Text: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage
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2SB905
SD1220
SD1220
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B905
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D1220
Abstract: 2sd1220 2SB905
Text: 2SD1220 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SD1220 Power Amplifier Applications • Unit: mm Complementary to 2SB905 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage
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2SD1220
2SB905
D1220
2sd1220
2SB905
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Untitled
Abstract: No abstract text available
Text: 2SB905 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SB905 Power Amplifier Applications • Unit: mm Complementary to SD1220 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage
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2SB905
SD1220
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2sd1220
Abstract: 2SB905
Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO
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2SD1220
2SB905
2sd1220
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2SB905
Abstract: 2SD1220
Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Tc = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage
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2SB905
2SD1220
2SB905
2SD1220
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2SD1220
Abstract: No abstract text available
Text: 2SD1220- SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS POWER AMPLIFIER APPLICATIONS. Unit in mm . 6 8 MAX, FEATURES: CL6 MAX . . Complementary to 2SB905 Û8MAX. MAXIMUM RATINGS (Ta=25üC) SYMBOL CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage
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2SD1220-
2SB905
200mA
2SD1220
2SD1220
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Colleetor-Emitter Voltage VCEO Emitter-Base Voltage
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2SB905
2SD1220
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2SB905
Abstract: 2SD1220
Text: TOSHIBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage
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2SB905
2SD1220
2SB905
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2SB927
Abstract: 2SB930 2SB813 2SB903 2SB904 2SB905 2SB906 2SB907 2SB908 2SB909M
Text: - 66 - T a = 2 5 cC , *EÎ]ÎÏTc=25<C m z 2SB903 2SB904 tt £ m m 2SB905 2SB906 m m. VcBO VcEO (V) (V) Ic(DC) (A) Pc Pc* w (W) M ICBO (max) Ä) (u Vro (V) M (min) ft W (max) te Vcp (VÍ (Ta=25T;) Ic /1 e (A) [tEPIitypffi] (max) (V) le (A) (V) ÏB Ó O
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2SB903
2SB904
2SB905
2SB906
2SB907
2SB908
2SB909M
2SB930
2SD1253A
2SD1254
2SB927
2SB930
2SB813
2SB903
2SB904
2SB905
2SB907
2SB908
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2sd1220
Abstract: 2SB905
Text: 2SD1220 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 PO W ER AM PLIFIER APPLICATIONS • Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage
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2SD1220
2SB905
2sd1220
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2SB905
Abstract: 2SD1220
Text: TO SH IBA 2SB905 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2SB905 Complementary to 2SD1220 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO Emitter-Base Voltage
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2SB905
2SD1220
2SB905
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2sd1220
Abstract: 2SB905
Text: 2SD1220 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S D 1 220 Complementary to 2SB905 MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage v CBO Colleetor-Emitter Voltage v CEO
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2SD1220
2SB905
2sd1220
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2SB905
Abstract: No abstract text available
Text: SILICON PNP EPITAXIAL TYPE 2SB905 POWER AMPLIFIER APPLICATION. Unit in mm FEATURES : Cl6 MAX. . Complementary to 2SD1220 MAXIMUM RATINGS Ta=25 C CHARACTERISTIC SYMBOL Collector-Base Voltage RATING UNIT vCBO -150 V Collector-Emitter Voltage VcEO -150 V Emitter-Base Voltage
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2SB905
2SD1220
-10mA,
-200mA
-500mA,
-50mA
2SB905
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SD1220 SILICON NPN EPITAXIAL TYPE POWER AMPLIFIER APPLICATIONS. Unit in mm 6.8MAX. FEATURES : . Complementary to 2SB905 n asíais MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 150 Collector-Emitter Voltage VCEO 150
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2SD1220
2SB905
200mA
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Untitled
Abstract: No abstract text available
Text: SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS -2SB905 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • Complementary to 2SD1220 M A X IM U M RATINGS (Ta = 25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage
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-2SB905
2SD1220
2SB905
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Untitled
Abstract: No abstract text available
Text: 2SD1220 TOSHIBA 2 S D 1 220 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON NPN EPITAXIAL TYPE PCT PROCESS Unit in mm Complementary to 2SB905 M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC Collector-Base Voltage VCBO Collector-Emitter Voltage
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OCR Scan
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2SD1220
2SB905
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