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    2SC1318 TRANSISTOR Search Results

    2SC1318 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC1318 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2SA720

    Abstract: 2SA719 2SC1317 2SC1318 transistor 2sa720
    Text: Transistor 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 Complementary pair with 2SC1317 and 2SC1318. Parameter Ta=25˚C Symbol Collector to


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    2SA719, 2SA720 2SC1317 2SC1318 2SC1318. 2SA719 2SA720 2SA719 2SC1318 transistor 2sa720 PDF

    TO-92B

    Abstract: 2SA0720 2SC1318
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1318 • Package  Complementary pair with 2SC1318


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    2002/95/EC) 2SA0720 2SC1318 O-92B-B1 TO-92B 2SA0720 2SC1318 PDF

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    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1318 • Features  Package  Complementary pair with 2SC1318


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    2002/95/EC) 2SA0720 2SC1318 O-92B-B1 PDF

    2SC1318 transistor

    Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A 2SC1317 transistor
    Text: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 4.0±0.2 5.1±0.2 5.0±0.2 • Complementary pair with 2SC1317 and 2SC1318.


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    2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317 2SC1318 2SC1318. 2SA0719 2SC1318 transistor 2SA0719 2SA0720 2SA719 2SA720 2SC1318 SC-43A 2SC1317 transistor PDF

    transistor 2sa720

    Abstract: No abstract text available
    Text: Transistor 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1317 and 2SC1318 Unit: mm 5.0±0.2 5.1±0.2 • Features Symbol Collector to 2SA0719 base voltage


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    2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317 2SC1318 2SC1318. 2SA0719 2SA0720 transistor 2sa720 PDF

    2SA720

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SA0719, 2SA0720 (2SA719, 2SA720) Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2


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    2002/95/EC) 2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317, 2SC1318 2SC1317 2SA0719 2SA720 PDF

    2sC1317 transistor

    Abstract: 2SC1318 2SC1318 transistor 2SC1317 2SA0719 2SA0720 2SA719 2SA720 SC-43A
    Text: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) 4.0±0.2 5.1±0.2 5.0±0.2 • Absolute Maximum Ratings Ta = 25°C


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    2SC1317, 2SC1318 2SA0719 2SA719) 2SA0720 2SA720) 2SC1317 2sC1317 transistor 2SC1318 2SC1318 transistor 2SC1317 2SA0719 2SA0720 2SA719 2SA720 SC-43A PDF

    2sa72

    Abstract: 2SA0719 2SA0720 2SA719 2SA720 2SC1317 2SC1318 SC-43A MA2401
    Text: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features Symbol Rating Unit VCBO −30


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    2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317, 2SC1318 2SA0719 2SC1317 2sa72 2SA0719 2SA0720 2SA719 2SA720 2SC1318 SC-43A MA2401 PDF

    2SC1318

    Abstract: 2SC1317 transistor 2SC1317
    Text: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA719 and 2SA720.


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    2SC1317, 2SC1318 2SA719 2SA720 2SA720. 2SC1317 2SC1318 2SC1317 transistor PDF

    2SC1317

    Abstract: 2SC1318 2SA0719 2SA0720
    Text: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Complementary pair with 2SA0719 and 2SA0720


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    2SC1317, 2SC1318 2SA0719 2SA0720 2SC1317 2SC1317 2SC1318 2SA0720 PDF

    2SC1318

    Abstract: 2SC1318 P 2SC1318P 2SC1317 2SA0720 2SC1318C 2SC1318 P,R
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 • Package  Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SC1318 2SA0720 O-92B-B1 2SC1318 2SC1318 P 2SC1318P 2SC1317 2SA0720 2SC1318C 2SC1318 P,R PDF

    2SC1318

    Abstract: 2SC1318R 2SC1318 transistor 2SC1318Q 2SA720 2SC1318-S 2SC1318-R 2SC1318 R
    Text: 2SC1318 0.5 A, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES   Low Collector to Emitter Saturation Voltage VCE sat Complementary Pair with 2SA720


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    2SC1318 2SA720 2SC1318-Q 2SC1318-R 2SC1318-S 19-Jan-2011 300mA, 200MHz 2SC1318 2SC1318R 2SC1318 transistor 2SC1318Q 2SA720 2SC1318-S 2SC1318-R 2SC1318 R PDF

    2SC1318

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2


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    2002/95/EC) 2SC1317, 2SC1318 2SA0719 2SA0720 2SC1317 2SC1318 2SC1317 PDF

    2SC1318 transistor

    Abstract: 2SC1317 2SC1318 2SC1317 transistor 2SA0719 2SA0720 2SA719 2SA720
    Text: Transistor 2SC1317, 2SC1318 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA0719 2SA719 and 2SA0720 (2SA720) Unit: mm 5.0±0.2 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0719 and 2SA0720.


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    2SC1317, 2SC1318 2SA0719 2SA719) 2SA0720 2SA720) 2SA0719 2SA0720. 2SC1317 2SC1318 transistor 2SC1317 2SC1318 2SC1317 transistor 2SA0720 2SA719 2SA720 PDF

    2sc1318

    Abstract: 2sc131
    Text: 2SC1318 NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Collector output capacitance : Cob=11 pF (TYP),20 pF (MAX) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 80 V


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    2SC1318 500mA 300mA 200MHz 150mA 2sc131 PDF

    2sc1318

    Abstract: 2sc1318c 2SC1318P
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 • Features  Package  Low collector-emitter saturation voltage VCE(sat)


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    2002/95/EC) 2SC1318 2SA0720 O-92B-B1 2sc1318 2sc1318c 2SC1318P PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planar type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA0719 and 2SA0720 4.0±0.2 5.1±0.2 5.0±0.2 • Low collector-emitter saturation voltage VCE sat • Complementary pair with 2SA0719 and 2SA0720


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    2SC1317, 2SC1318 2SA0719 2SA0720 2SC1317 2SC1317 2SC1318 PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors 2SA0719, 2SA0720 2SA719, 2SA720 Silicon PNP epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SC1317, 2SC1318 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features


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    2SA0719, 2SA0720 2SA719, 2SA720) 2SC1317, 2SC1318 2SA0719 2SA0719 2SA0720 PDF

    2SC1318

    Abstract: 2SC1317 2SA720 2SA719 2sc131
    Text: Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit: mm For low-frequency power amplification and driver amplification Complementary to 2SA719 and 2SA720 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.2 • Features 0.7±0.1 13.5±0.5 • Low collector to emitter saturation voltage VCE sat


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    2SC1317, 2SC1318 2SA719 2SA720 2SC1317 2SC1318 2SC1317 2SA720 2sc131 PDF

    2SC1318 transistor

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1318 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat) z Complementary Pair with 2SA720 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    2SC1318 2SA720 150mA 500mA 300mA 200MHz 2SC1318 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1318 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0720 • Package M Di ain sc te on na tin nc ue e/ d  Features


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    2002/95/EC) 2SC1318 2SA0720 O-92B-B1 PDF

    2sc1815 equivalent

    Abstract: 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table NPN Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SC1214 HN / BC 337 / 8050 2SC1478 HN / BC 548 / 9014 2SC1707 HN / BC 548 / 9014 2SC1219 HN / BC 337 / 8050


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    To-92 2SC1214 2SC1478 2SC1707 2SC1219 2SC1537 2SC1734 2SC1220 2SC1539 2SC1736 2sc1815 equivalent 2SC1312 equivalent of transistor 8050 equivalent of transistor 9014 NPN 2SC1740 equivalent transistor bc 549 equivalent transistor 2sc1312 transistor bc 549 BC337 8050 PDF

    2SC1072

    Abstract: 2SA713 2SC1328 2SC1318T 2sc1162 2SC1346 138B 2SC1317 2SC1318 2SC1327
    Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan
    2SC94S 2SC1368 Tc-25 120nS 2SC1072 2SA713 2SC1328 2SC1318T 2sc1162 2SC1346 138B 2SC1317 2SC1318 2SC1327 PDF

    2SB667

    Abstract: MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404
    Text: Discontinued Types • Discontinued •m o s L S Is Type No. Alternative MN1001 Type No. Alternative Type No. — MN14T6 MN1418 MN15621 MN110 MN1101 MN1420 - — MN1421 - MN115 - MN1425 MN1427 - MN116 MN1200 - MN1441 MN1201 MN1202 - MN1204


    OCR Scan
    MN14T6 MN1418 MN1420 MN1421 MN1425 MN1427 MN1441 MN1442 MN1432 MN1450B 2SB667 MN41C4256-08 MN41256A08 MN187164 MN41256A-08 MN2114-3 3sk129 MN1455LF MN41464A08 MN6404 PDF