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    2SC1383 TRANSISTOR Search Results

    2SC1383 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC1383 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC1384

    Abstract: transistor 2sc1384 ic 2sc1384 2SC1383
    Text: 2SC1383/2SC1384 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 1 A 2. COLLECTOR 3. BASE 2SC1383: 30 V 2SC1384: 50 V Operating and storage junction temperature range


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    PDF 2SC1383/2SC1384 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384: 500mA 2SC1384 transistor 2sc1384 ic 2sc1384 2SC1383

    2sc1384

    Abstract: 2SC1383 ic 2sc1384 transistor 2sc1384 NPN transistor 2sc1384 NPN transistor 2sc1383 2SC138
    Text: 2SC1383/2SC1384 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURE Power dissipation PCM: 1. EMITTER 1 W(Tamb=25℃) 2. COLLECTOR Collector current ICM: 1 A Collector-base voltage 2SC1383: 30 V V(BR)CBO: 2SC1384: 50 V Operating and storage junction temperature range


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    PDF 2SC1383/2SC1384 2SC1383 2SC1384 O-92MOD 2SC1383: 2SC1384: 500mA 2sc1384 2SC1383 ic 2sc1384 transistor 2sc1384 NPN transistor 2sc1384 NPN transistor 2sc1383 2SC138

    2SA683

    Abstract: 2SA684 transistor 2sa683 2SA683 transistor 2SC1383 2SC1384 030HFE 2sc1384 transistor TRANSISTOR 2sa684
    Text: Transistor 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.


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    PDF 2SA683, 2SA684 2SC1383 2SC1384 2SC1384. 2SA683 2SA683 2SA684 transistor 2sa683 2SA683 transistor 2SC1384 030HFE 2sc1384 transistor TRANSISTOR 2sa684

    2SC1384

    Abstract: 2SA684 2SA0683 2SA0684 2SA683 2SC1383
    Text: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.


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    PDF 2SA0683, 2SA0684 2SA683, 2SA684) 2SC1383 2SC1384 2SC1384. 2SA0683 2SC1384 2SA684 2SA0683 2SA0684 2SA683

    2SA0683

    Abstract: 2SC1384 2SA0684 2SA683 2SA684 2SC1383 2SA684 S
    Text: Transistor 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SC1383 and 2SC1384 Unit: mm 5.9±0.2 4.9±0.2 Complementary pair with 2SC1383 and 2SC1384. Allowing supply with the radial taping.


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    PDF 2SA0683, 2SA0684 2SA683, 2SA684) 2SC1383 2SC1384 2SC1384. 2SA0683 2SA0683 2SC1384 2SA0684 2SA683 2SA684 2SA684 S

    2SC1384

    Abstract: 2SC1383 TO-92L
    Text: Transys Electronics L I M I T E D TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 2. COLLECTOR 3. BASE 1 A 2SC1383:


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    PDF O-92L 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384: 500mA 2SC1384 2SC1383 TO-92L

    2SA06

    Abstract: 2SA60 Silicon PNP epitaxial planar type For low-frequency 2SA0683 2SA0684 2SA683 2SA684 2SC1383 2SC1384
    Text: Transistors 2SA0683, 2SA0684 2SA683, 2SA684 Silicon PNP epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SC1383, 2SC1384 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Complementary pair with 2SC1383 and 2SC1384


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    PDF 2SA0683, 2SA0684 2SA683, 2SA684) 2SC1383, 2SC1384 2SC1383 2SA0683 2SA06 2SA60 Silicon PNP epitaxial planar type For low-frequency 2SA0683 2SA0684 2SA683 2SA684 2SC1384

    2SC1383

    Abstract: 2SA0683 2SA0684 2SC1384 2SC1383 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER


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    PDF O-92MOD 2SC1383 2SC1384 O-92MOD 2SA0683 2SA0684. 500mA 500mA 2SC1383 2SA0684 2SC1384 2SC1383 transistor

    2SC1384

    Abstract: 2SC1383 ic 2sc1384 2SA683 2SA684 transistor 2sc1384
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, -50mA 2SC1384 ic 2sc1384 2SA684 transistor 2sc1384

    2SC1384

    Abstract: 2SA683 2SA684 ic 2sc1384 2SC1383
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, 2SC1384 2SA684 ic 2sc1384

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER


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    PDF O-92MOD 2SC1383 2SC1384 O-92MOD 2SA0683 2SA0684. 500mA 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low Collector to Emitter Saturation Voltage VCE(sat). z Complementary Pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR


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    PDF O-92L 2SC1383 2SC1384 O-92L 2SA0683 2SA0684. 500mA 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 1 A 2. COLLECTOR


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    PDF O-92L 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384:

    2sc1384

    Abstract: 2SC1383 transistor ic 2sc1384 NPN transistor 2sc1383 2SA683 2SA684 2SC1383
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, -50mA 2sc1384 2SC1383 transistor ic 2sc1384 NPN transistor 2sc1383 2SA684

    2SC1384

    Abstract: 2SC1383 2sc1384 transistor 2SC1383 transistor
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W (Tamb=25℃) 1 A 2. COLLECTOR


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    PDF O-92L 2SC1383 2SC1384 O-92L 2SC1383: 2SC1384: 500mA 2SC1384 2SC1383 2sc1384 transistor 2SC1383 transistor

    2SC1384

    Abstract: ic 2sc1384 2SC1383
    Text: 2SC1383/2SC1384 NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-92 MOD 4.9 ±0.2 6.0±0.2 8.6±0.2 FEATURE Power dissipation 1.0±0.1 1 W Tamb=25℃ 2.0 +0.3 –0.2


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    PDF 2SC1383/2SC1384 2SC1383: 2SC1384: 2SC1383 01-Jun-2002 2SC1384 2SC1384 ic 2sc1384 2SC1383

    2SC1384

    Abstract: 2SC1383 ic 2sc1384 2SA683 2SA684
    Text: ST 2SC1383 / 2SC1384 NPN Silicon Epitaxial Planar Transistor For low-frequency power amplification and driver Amplification. Complementary to 2SA683 to and 2SA684. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package


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    PDF 2SC1383 2SC1384 2SA683 2SA684. 2SC1383 500mA, 2SC1384 ic 2sc1384 2SA684

    2SC1384

    Abstract: 2SC1383 2SA0683 2SA0684
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92L FEATURES z Low collector to emitter saturation voltage VCE(sat). z Complementary pair with 2SA0683 and 2SA0684. 1.EMITTER 2.COLLECTOR


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    PDF O-92L 2SC1383 2SC1384 O-92L 2SA0683 2SA0684. 500mA 500mA 2SC1384 2SC1383 2SA0684

    2SA0683

    Abstract: 2SC1383 2SC1384 2SC1384C 2SC1383 2SC1384 PANASONIC
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383 Silicon NPN epitaxial planar type For low-frequency power amplification and driver amplification Complementary to 2SA0683 • Package  Low collector-emitter saturation voltage VCE(sat)


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    PDF 2002/95/EC) 2SC1383 2SA0683 O-92L-A1 2SA0683 2SC1383 2SC1384 2SC1384C 2SC1383 2SC1384 PANASONIC

    2SC1384

    Abstract: 2SC1383 2SC1384 PANASONIC
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684


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    PDF 2002/95/EC) 2SC1383, 2SC1384 2SC1383 2SC1384 2SA0683, 2SA0684 2SC1383 2SC1383 2SC1384 PANASONIC

    2SC1384

    Abstract: ic 2sc1384 2SA0683 2SA0684 2SC1383 2SC1383 2SC1384 PANASONIC
    Text: Transistors 2SC1383, 2SC1384 Silicon NPN epitaxial planar type Unit: mm 5.9±0.2 • Features 8.6±0.2 For low-frequency power amplification and driver amplification Complementary to 2SA0683, 2SA0684 13.5±0.5 0.7+0.3 –0.2 0.7±0.1 • Low collector-emitter saturation voltage VCE sat


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    PDF 2SC1383, 2SC1384 2SA0683, 2SA0684 2SC1383 2SC1384 ic 2sc1384 2SA0683 2SA0684 2SC1383 2SC1383 2SC1384 PANASONIC

    2sc1384 transistor

    Abstract: 2SC1384 2SA683 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC
    Text: Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Complementary to 2SA683 and 2SA684 Unit: mm 5.9±0.2 4.9±0.2 Low collector to emitter saturation voltage VCE sat . Complementary pair with 2SA683 and 2SA684.


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    PDF 2SC1383, 2SC1384 2SA683 2SA684 2SA684. 2SC1383 2sc1384 transistor 2SC1384 2SA684 2SC1383 2SC1383 2SC1384 PANASONIC

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC1383 2SC1384 TRANSISTOR NPN TO-92MOD FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: 1. EMITTER 1 W(Tamb=25℃) 1 A 2. COLLECTOR


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    PDF O-92MOD 2SC1383 2SC1384 O-92MOD 2SC1383: 2SC1384:

    2sc1384

    Abstract: 2sc1383 transistor 2sc1384 NPN transistor 2sc1384 85170
    Text: 2SC1383/2SC1384 TO-92MOD Transistor NPN 1.EMITTER TO-92MOD 2.COLLECTOR 1 2 3 5.800 6.200 3.BASE 8.400 8.800 Features — — 0.900 1.100 0.400 0.600 Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA0683 and 2SA0684. 13.800 14.200


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    PDF 2SC1383/2SC1384 O-92MOD O-92MOD 2SA0683 2SA0684. 2SC1383 2SC1384 transistor 2sc1384 NPN transistor 2sc1384 85170