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    2SC1674 TRANSISTOR Search Results

    2SC1674 TRANSISTOR Result Highlights (5)

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    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2SC1674 TRANSISTOR Datasheets Context Search

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    2SC1674

    Abstract: No abstract text available
    Text: 2SC1674 2SC1674 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range 3. BASE . 1 2 3 TJ, Tstg: -55℃ to +150℃


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    2SC1674 100MHz, 100MHz 2SC1674 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC NPN SILICON TRANSISTOR ELECTRON DEVICE 2SC1674 DESCR IPTIO N The 2SC1674 is designed fo r use in FM RF am p lifie r and PAC KAG E DIM EN SIO N S local oscillator o f FM tuner. FE A TU R E S in millimeters inches 5 2 MAX. (0204 MAX.) • High gain bandw idth p roduct ( f t = 6 0 0 MHz TYP.)


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    2SC1674 2SC1674 PDF

    Transistor 2sC1674

    Abstract: 2SC1674 PA33 VCE-60
    Text: NPN SILICON TRANSISTOR 2SC1674 D E S C R IP TIO N The 2SC1674 is designed for use in FM RF amplifier and PAC KAG E D IM E N S IO N S local oscillator of FM tuner. in millimeters inches 5.2 M A X .' • High gain bandwidth product (f-j-= 6 0 0 M H z T Y P .


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    2SC1674 2SC1674 Transistor 2sC1674 PA33 VCE-60 PDF

    fm tuner ic

    Abstract: 2SC1674 ST2SC1674
    Text: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


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    2SC1674 100MHz, fm tuner ic 2SC1674 ST2SC1674 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC1674 TRANSISTOR NPN 1. EMITTER 2. COLLECTOR FEATURES z General Purpose Switching and Amplification. 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    2SC1674 PDF

    2SC1674

    Abstract: 2SC1674Y 2SC1674BL Transistor 2sC1674
    Text: 2SC1674 0.02 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  General Purpose Switching and Amplification TO-92 G H Emitter Collector Base


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    2SC1674 2SC1674-Y 2SC1674-GR 2SC1674-BL 21-Feb-2011 2SC1674 2SC1674Y 2SC1674BL Transistor 2sC1674 PDF

    fm tuner ic

    Abstract: 2SC1674
    Text: DC COMPONENTS CO., LTD. 2SC1674 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for TV PIF, FM tuner RF amplifier, mixer, and oscillator applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Emitter


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    2SC1674 fm tuner ic 2SC1674 PDF

    Untitled

    Abstract: No abstract text available
    Text: | e FORWARD INTERNATIONAL ELECTRONICS L ID . 2SC1674 SEMICONDUCTOR NPN EPITAXIAL SILICON TRANSISTOR TECHNICAL DATA TV PIE A M P L IF IE R S TUNER RF AMPLEFIER,MIXER,OSCILLATOR * High Current Gain-Bandwidth Product fT=600MHz Typ * High Power Gain Gpe=22d B at f=100MHz


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    2SC1674 600MHz 100MHz PDF

    fm tuner ic

    Abstract: 2SC1674
    Text: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


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    2SC1674 100MHz, fm tuner ic 2SC1674 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage V(BR)CBO:


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    2SC1674 100MHz, 100MHz PDF

    2SC1674

    Abstract: fm tuner ic
    Text: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


    Original
    2SC1674 100MHz, 2SC1674 fm tuner ic PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


    Original
    2SC1674 100MHz, PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


    Original
    2SC1674 100MHz, PDF

    fm tuner ic

    Abstract: 2SC1674 st2sc1674
    Text: ST 2SC1674 NPN Silicon Epitaxial Planar Transistor TV PIF amplifier, FM tuner RF amplifier. The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.


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    2SC1674 100MHz, fm tuner ic 2SC1674 st2sc1674 PDF

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗2SA988 2SA992


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    X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent PDF

    2SD1557

    Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
    Text: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m


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    2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 2SC1674 2SC1675 2SA1005 2SA1206* 2SA988 2SD1557 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099 PDF

    2SC1674

    Abstract: No abstract text available
    Text: Transistors 2SC1674 USHA INDIA LTD TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain-Bandwidth Product fT=600MHz (Typ) • High Power Gain Gpe=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage


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    2SC1674 600MHz 100MHz 10iiA, 109MHz 2SC1674 PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR( NPN ) TO—92 FEATURE Power dissipation PCM : 0. 25 W(Tamb=25℃) Collector current ICM : 0.02 A Collector-base voltage V BR CBO : 30 V Operating and storage junction temperature range


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    2SC1674 270TYP 050TYP PDF

    2SC1674

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SC1674 TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 1. EMITTER 0. 25 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.02 A Collector-base voltage 30 V V(BR)CBO: Operating and storage junction temperature range


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    2SC1674 100MHz, 100MHz 2SC1674 PDF

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


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    2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent PDF

    2SC930

    Abstract: 2SC947 2SC948 2sc922 2SC1923-O 2SC929 2sc717
    Text: RF-IF High Frequency Transistors MAXIMUM RATINGS TYPE NO. POLA­ RITY H„ VcE Hrf v* (m W ) Ic (mA) VcEO (V) min max N N N N N TO-92A TO-72G TO-72G TO-92B TO-72G 625 140 200 200 120 50 30 20 50 20 15 32 15 19 15 20 40 40 40 35 170 150 300 # 2SC829 2SC838


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    2SC1674 2SC1687 2SC1688 2SC1730 2SC1778 2SC1789 2SC1923 O-92A O-72G 2SC930 2SC947 2SC948 2sc922 2SC1923-O 2SC929 2sc717 PDF

    2SC922

    Abstract: 2SC948 2N4935 2N5132 2sc929 2N4994 2SC947 2SC1789 2SC838 2N4934
    Text: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J


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    2N4934 O-72J 2N4935 2N4936 2N4994 O-92F 2N4995 2SC922 2SC948 2N5132 2sc929 2SC947 2SC1789 2SC838 PDF

    2sc948

    Abstract: 2N4935 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730
    Text: RF-IF High Frequency Transistors POLA­ RITY fT VCE sat HFE MAXIMUM RATINGS TYPE NO. CASE Pd (mW) ("A ) VCEO (V) IC min max IC (mA) VCE (V) max (V) IC (mA) nun (MHz) Cob Cre* max (PF) _ N.F. max (dB) 2N4934 2N4935 2N4936 2N4994 2N4995 N N N N N TO-72J TO-72J


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    2N4934 O-72J 2N4935 2N4936 2N4994 O-92F 2N4995 2sc948 2SC922 2SC1674 2sc717 2SC947 2SC839 2sc929 2SC930 2SC1730 PDF

    2SC817

    Abstract: 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2N5130 2n5179 2SC1789 2SC838
    Text: NO. MAXIMUM RATINGS Pd ImWl •c ImAI V CE SAT V CEO (V) min max 'c ImAI V CE (V) max (V) 'c (mA) fT min Cob Cre« max max (MHz) (pF) (dB) N.F. 2N5127 2N5130 2N5131 2N5132 2N5179 N N N N N TO-106 TO-106 TO-106 TO-106 TO-72G 200 200 200 200 200 100 50 200


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    2N5127 O-106 2N5130 2N5131 2N5132 2N5179 O-72G 2SC817 2sc929 2SC948 2SC1730 transistor 2sc930 2SC947 2SC1789 2SC838 PDF