2sc2230
Abstract: 2sc2230 NPN Transistor 2SC2230 GR
Text: 2SC2230 2SC2230 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current ICM: 0.1 A Collector-base voltage 200 V V(BR)CBO: Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃
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2SC2230
O-92MOD
2sc2230
2sc2230 NPN Transistor
2SC2230 GR
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2230 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current ICM: 0.1 A Collector-base voltage
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O-92MOD
2SC2230
O-92MOD
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2sC2230
Abstract: 2sc2230 NPN Transistor 2SC2230A VCEO180V TO92mod
Text: 2SC2230/2SC2230A TO-92MOD Transistor NPN 1. EMITTER 1 2 3 TO-92MOD 5.800 6.200 2. COLLECTOR 3. BASE 8.400 8.800 0.900 1.100 Features 0.400 0.600 13.800 14.200 High voltage: VCEO=180V(2SC2230A) High DC Current Gain 1.500 TYP 2.900 3.100 1.600 0.000
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2SC2230/2SC2230A
O-92MOD
O-92MOD
2SC2230A)
2SC2230
2SC2230A
25rent
2sc2230 NPN Transistor
VCEO180V
TO92mod
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2sc2230
Abstract: 2SC2230A 2SC2230 GR
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 2SC2230/2230A TRANSISTOR NPN 1. EMITTER FEATURE z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
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O-92MOD
O-92MOD
2SC2230/2230A
2SC2230A)
2SC2230A
2SC2230
2sc2230
2SC2230A
2SC2230 GR
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2230 TO-92MOD TRANSISTOR( NPN ) 1.EMITTER FEATURE Power dissipation PCM : 0.8 W(Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage
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O-92MOD
2SC2230
500TYP
059TYP
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transistor C2230
Abstract: c2230 C2230A C2230 NPN Transistor 2sc2230 transistor C2230a 2SC2230A
Text: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain
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2SC2230
2SC2230A
2SC2230A)
2SC2230
transistor C2230
c2230
C2230A
C2230 NPN Transistor
transistor C2230a
2SC2230A
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transistor C2230
Abstract: c2230a 2SC2230 C2230 C2230 NPN Transistor
Text: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain
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2SC2230
2SC2230A
2SC2230A)
2SC2230A
O-92MOD
transistor C2230
c2230a
C2230
C2230 NPN Transistor
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transistor C2230
Abstract: C2230 C2230 NPN Transistor c2230a 2SC2230 2SC2230A
Text: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain
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2SC2230
2SC2230A
2SC2230A)
2SC2230
transistor C2230
C2230
C2230 NPN Transistor
c2230a
2SC2230A
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transistor C2230
Abstract: c2230 c2230a transistor C2230a C2230 NPN Transistor 2SC2230 2SC2230A
Text: 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT Process 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications • High breakdown voltage: VCEO = 180 V (2SC2230A) • High DC current gain
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2SC2230
2SC2230A
2SC2230A)
2SC2230
transistor C2230
c2230
c2230a
transistor C2230a
C2230 NPN Transistor
2SC2230A
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c2230a
Abstract: C2230 2SC2230 2SC2230 GR 2SC2230A
Text: 2SC2230,2SC2230A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2230,2SC2230A ○ 高耐圧一般増幅用 ○ カラーテレビ B 級音声出力用 • 単位: mm 高耐圧です。: VCEO = 180 V (2SC2230A) 絶対最大定格 (Ta = 25°C)
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2SC2230
2SC2230A
2SC2230A)
2SC2230
O-92MOD
c2230a
C2230
2SC2230 GR
2SC2230A
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c2230a
Abstract: C2230 2SC2230 2SC2230A 2SC2230 GR
Text: 2SC2230,2SC2230A 東芝トランジスタ シリコンNPN三重拡散形 PCT方式 2SC2230,2SC2230A ○ 高耐圧一般増幅用 ○ カラーテレビ B 級音声出力用 • 単位: mm 高耐圧です。: VCEO = 180 V (2SC2230A) 絶対最大定格 (Ta = 25°C)
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2SC2230
2SC2230A
2SC2230A)
2SC2230
O-92MOD
c2230a
C2230
2SC2230A
2SC2230 GR
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2sC5200, 2SA1943
Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current
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BCE0016D
2sC5200, 2SA1943
2SA1941 equivalent
2SC5353 equivalent
2sc5198 equivalent
amplifier circuit using 2sa1943 and 2sc5200
2SC2383 equivalent
tpcp8l01
2SA1962 equivalent
2SC4793 2sa1837
2sA1013 equivalent
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2sc5088 horizontal transistors
Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.
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BCE0016A
3501C-0109
F-93561,
2sc5088 horizontal transistors
equivalent 2SC2655
2sc5858
2sC5200, 2SA1943
2sa1930 transistor equivalent
2SA1941 equivalent
2sc5570
zener diode SMD marking code 27 4F
2sc5200 audio amplifiers
smd transistor h2a
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smd transistor h2a
Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output
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BCE0016C
E-28831
BCE0016D
smd transistor h2a
SMD TRANSISTOR H2A NPN
transistor smd H2A
2sa1943 amplifier circuit diagram
TPCP8L01
2sC5200, 2SA1943
H2A transistor SMD
2sc5200 power amplifiers diagram
MARKING SMD PNP TRANSISTOR h2a
SMD H2A
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C2230
Abstract: VCEO160V c2230a 2SC2230 2SC2230A 2sc2230 NPN Transistor
Text: TO SH IBA 2SC2230,2SC2230A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2230, 2SC2230A Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS 5.1 MAX. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS • • High Voltage : VeEO = 180V (2SC2230A)
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2SC2230
2SC2230A
2SC2230,
2SC2230A)
75MAX.
C2230
VCEO160V
c2230a
2SC2230A
2sc2230 NPN Transistor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC2230,2SC2230A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2230, 2SC2230A Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 5.1M A X. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • • High Voltage : V CEO = 180V (2SC2230A)
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2SC2230
2SC2230A
2SC2230,
2SC2230A)
2SC2230
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C2230
Abstract: c2230a 2SC2230 2SC2230A
Text: TO SH IBA 2SC2230,2SC2230A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC2230, 2SC2230A Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 5.1 MAX. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • • High Voltage : V eEO = 180V (2SC2230A)
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2SC2230
2SC2230A
2SC2230,
2SC2230A)
75MAX
C2230
c2230a
2SC2230A
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Untitled
Abstract: No abstract text available
Text: M TO-92MOD Plastic-Encapsulate Transistors^ ^ C ^ 2SC2230 TRANSISTOR NPN FE AT U RES T O -9 2 M O D P cm : 0.8W (Tamb=25'C) 1 EM ITTER lew: 0 .1 A 2 .C O L L E C T O R vottag* 3 .B A S E V(BR)CBO: 200 V PPtejÜÉ^l?éwdi;to fa o « junction temperature range
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O-92MOD
2SC2230
2SC2230/2SC2230A
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2SC2230
Abstract: c2230a C2230
Text: SILICON NPN T R IP LE DIFFU SED T Y P E P C T P R O C E S S 2SC2230,2SC2230A HIGH VOLTAGE G ENERAL AM PLIFIER APPLICATIONS. CO LO R TV CLASS B S O U N D OUTPUT APPLICATIONS. • • High Voltage : VcEO = 180V (2SC2230A) High DC Current Gain. M A X IM U M RATINGS (Ta = 25°C)
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2SC2230
2SC2230A
2SC2230A)
2SC2230A
C2230
c2230a
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2SC2230
Abstract: C2230 c2230a 2SC2230A 2SC2230 toshiba
Text: TOSHIBA 2SC2230,2SC2230A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC22B0, 2SC2230A Unit in mm HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. 5.1 MAX. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • • High Voltage : V c e O = 18(>v (2SC2230A)
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2SC2230
2SC2230A
2SC2230,
2SC2230A)
75MAX
CO2230A
C2230
c2230a
2SC2230A
2SC2230 toshiba
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2230,2SC2230A TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS 2SC223Q, 2SC223QA HIGH VOLTAGE GENERAL AMPLIFIER APPLICATIONS. COLOR TV CLASS B SOUND OUTPUT APPLICATIONS. • • High Voltage : VCEO = 180V (2SC2230A) High DC Current Gain.
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2SC2230
2SC2230A
2SC223Q,
2SC223QA
2SC2230A)
2SC2230A
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2Sj72
Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
Text: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *
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2SA1160
2SC2500
2SA1160
2SC1627A
2SC2235
2SA817A
2SA965
2SK147
2SJ72
2Sj72
transistor 2SC2655
2sc2705
transistor 2sc2500
high voltage driver
transistor 2sc2482
2SC238
2sc2383
2SC3225
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TA8701
Abstract: TRF-1066 TA8701AN U06E TRF1066
Text: TOSHIBA TA8701 AN TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA8701AN PIF/SIF + ATT IC FOR T V / V T R FEATURES PIF section • RF-Pre Amp. less by high input sensitivity • 3-Stage IF amplifier with variable gain • High-Speed response AGC with dual time constants
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TA8701
TA8701AN
SDIP24-P-300-1
ju06E
TRF-1066
TA8701AN
U06E
TRF1066
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TRF1070
Abstract: No abstract text available
Text: IN TEG RA TED TOSHIBA CIRCUIT TECHNICAL TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT DATA TA8701AN SILICON MONOLITHIC PIF I SIF + ATT IC FOR T V/ VT R FEATURES PIF section • RF-Pre Amp. less by high input sensitivity • 3-Stage IF amplifier with variable gain
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TA8701AN
80dB//V
TA87Q1AN
TRF1070
TRF1066
TRF1060D
TRF1059D
TRF6010D
TRF1070
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