SMD IC MARKING GP

Abstract: 2SC2404
Contextual Info: Transistors IC SMD Type Silicon PNP Epitaxial Planar Type 2SC2404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 High transition frequency fT 0.55 Optimum for RF amplification of FM/AM radios +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1

vbe 10v, vce 500v NPN Transistor

Abstract: 2SC2415 NPN Transistor 1A 400V power transistor 3A vce 500v NPN Transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2415 DESCRIPTION •High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO SUS = 400V (Min) APPLICATIONS ·Designed for high speed power switching applications.

transistor 2sc2412k

Abstract: smd transistor bq smd transistor bq 50 SMD TRANSISTOR MARKING BR 2SC2412K transistor 2sc.2412K 2SC2412K smd
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SC2412K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Low Cob.Cob=2.0pF Typ. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base

transistor smd marking CQ

Abstract: transistor smd marking CR transistor cr marking transistor smd marking CQ MARKING SMD npn TRANSISTOR transistor smd cr transistor CR NPN 2SC2411K
Contextual Info: Transistors SMD Type Medium Power Transistor 2SC2411K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 1 NPN silicon transistor 0.55 Low VCE sat . Optimal for low voltage operation. +0.1 1.3-0.1 +0.1 2.4-0.1 High ICMax. ICMax. = 0.5A 2 +0.1 0.95-0.1

Contextual Info: 2SC2411K NPN GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 32 Volts POWER 225mW • NPN epitaxial silicon,planar design • Collector-emitter voltage VCE=32V • Collector current IC=500mA • Lead free in comply with EU RoHS 2011/65/EU directives. • Green molding compound as per IEC61249 Std. . Halogen Free

2SA1195

Abstract: 2SC2483
Contextual Info: JMnic Product Specification 2SA1195 Silicon PNP Power Transistors DESCRIPTION ・With TO-202 package ・High power dissipation ・Complement to type 2SC2483 APPLICATIONS ・For high voltage and general purpose amplification PINNING see Fig.2 PIN DESCRIPTION

2SA1061

Abstract: 2SC2485
Contextual Info: Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1061 DESCRIPTION ・With TO-3PN package ・Complement to type 2SC2485 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base

Silicon Power Transistors

Abstract: 2SA1061 2SC2485
Contextual Info: Product Specification www.jmnic.com 2SC2485 Silicon Power Transistors DESCRIPTION ・With TO-3PN package ・Complement to type 2SA1061 ・High collector power dissipation APPLICATIONS ・High power audio frequency amplifier PINNING PIN DESCRIPTION 1 Base 2

EAt-11

Abstract: 2SA1096 2SA1096A 2SC2497 2SC2497A
Contextual Info: Power Transistors 2SA1096, 2SA1096A 2SA1096, 2SA1096A Silicon PNP Epitaxial Planar Type Package Dimensions AF Power Amplifier Complementary Pair with 2SC2497, 2SC2497A • Features • 5W o u tp u t in c o m p le m e n ta ry p air w ith 2S C 2497, 2S C 2497A

2SA1065

Abstract: 2SC2489
Contextual Info: AOK AOK Semiconductor Product Specification 2SA1065 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Low collector saturation voltage • High transition frequency • Complement to type 2SC2489 APPLICATIONS • For audio frequency amplifier and high

2SC2481

Abstract: Toshiba 2SC2481 2SA1021 AC46C
Contextual Info: TOSHIBA { D I S C R E T E / O P T O ! 9097250 TOSHIBA ~5b <DI S C R E T E / O P T O 5bC DE | T C n 7 2 S D 07 538 D0D7S3Ö 0 P<? 1 D r- 2SC2481 S IL IC O N NPN E P IT A X IA L TYPE PCT PROCESS) I Unit in mm COLOR TV VERT. DEFLECTION OUTPUT APPLICATIONS.

Contextual Info: EMZ1 0.15 W, ±150 mA, ±60 V Silicon Epitaxial Planar Power Management Dual Transistors Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES z 2SA1037AK and 2SC2412K are housed independently in a package.

2SC2463

Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2463 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Low frequency amplifier. 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter

2SC2458 GR

Abstract: 2SC2458 2SA1048
Contextual Info: 2SC2458 L TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2458(L) Audio Amplifier Applications Low Noise Audio Amplifier Applications • High current capability: IC = 150 mA (max) • High DC current gain: hFE = 70~700 Unit: mm • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SA1049

Abstract: 2SC2459 transistor 2sc2459
Contextual Info: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)

2SC2498

Contextual Info: TOSHIBA 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION MAXIMUM RATINGS Ta = 4.7 M A X . , 5.1 M A X 25°C CHARACTERISTIC Collector-Base Voltage Colleetor-Emitter Voltage Emitter-Base Voltage

2SC2484

Abstract: 2SA1060 HIGH POWER AUDIO
Contextual Info: SavantIC Semiconductor Product Specification 2SA1060 Silicon PNP Power Transistors DESCRIPTION •With TO-3PN package ·Complement to type 2SC2484 ·High collector power dissipation APPLICATIONS ·High power audio frequency amplifier PINNING PIN DESCRIPTION

2SA1064

Abstract: 2SC2488
Contextual Info: SavantIC Semiconductor Product Specification 2SA1064 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Low collector saturation voltage ·Complement to type 2SC2488 ·High transition frequency APPLICATIONS ·For audio frequency amplifier and high

2SC245

Contextual Info: SavantIC Semiconductor Product Specification 2SC245 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·Wide area of safe operation APPLICATIONS ·For audio frequency output applications PINNING see Fig.2 PIN DESCRIPTION 1 Base 2 Emitter 3 Collector

2SC2487

Abstract: 2SA1063
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1063 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -120V(Min.) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SC2487 APPLICATIONS

2SA2018

Abstract: 2SC2412K
Contextual Info: EMZ8 / UMZ8N Transistors Power management dual transistors EMZ8 / UMZ8N zExternal dimensions (Unit : mm) zFeature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. 0.22 (5) (6) (2) 1.2 1.6 (1) 0.5 0.13 zEquivalent circuits (3) (4) 0.5 0.5

Contextual Info: T O S H IB A 2SC2498 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2498 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATION . 5.1 M AX. M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2SA1037AK

Abstract: 2SC2412K T148 emt5
Contextual Info: EMY1 / UMY1N / FMY1A Transistors Emitter common dual transistors EMY1 / UMY1N / FMY1A zExternal dimensions (Unit : mm) (3) (4) 0.22 0.5 0.5 1.0 1.6 EMY1 (2) (5) 1.2 1.6 (1) 0.5 0.13 zFeatures 1) Includes a 2SA1037AK and a 2SC2412K transistor in a EMT or UMT or SMT package.

transistor 2sc2459

Abstract: 2SC2459
Contextual Info: TOSHIBA 2SC2459 TO SHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC2459 Unit in mm A U D IO AMPLIFIER APPLICATIONS | High Breakdown Voltage : V qeq = 120V (Min.) High DC Current Gain : hpE = 200~700 Excellent hpg Linearity : hpE (Ic = 0.1mA) / hjrg (Iq = 2mA) = 0.95 (Typ.)