TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED
Abstract: 2sc2440
Text: 2SC2440 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications 1 : Base 2 : Collector Switching regulators Ultrasonic generators
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2SC2440
O-220AB
SC-46
TRIPLE DIFFUSED PLANER TYPE HIGH CURRENT HIGH SPEED
2sc2440
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2sc2440
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SB1463G
2SC2440G
2sc2440
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ue pl d in an c
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2002/95/EC)
2SB1463G
2SC2440G
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npn transistors 400V 3A
Abstract: 2SC2440 high frequency npn transistors 400V 3A
Text: SavantIC Semiconductor Product Specification 2SC2440 Silicon NPN Power Transistors DESCRIPTION •With TO-220C package ·High voltage ,high speed switching ·High reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters
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2SC2440
O-220C
npn transistors 400V 3A
2SC2440
high frequency npn transistors 400V 3A
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2SB1463J
Abstract: SC-89
Text: Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01 0 to 0.02 0.50 (0.50) • Absolute Maximum Ratings Ta = 25°C
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2SB1463J
2SC2440J
2SB1463J
SC-89
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2SB1463J
Abstract: SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01
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2002/95/EC)
2SB1463J
2SC2440J
2SB1463J
SC-89
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification Complementary to 2SC2440J 0.12+0.03 –0.01
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2002/95/EC)
2SB1463J
2SC2440J
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2SC2440
Abstract: 2SC244
Text: Inchange Semiconductor Product Specification 2SC2440 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters
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2SC2440
O-220C
2SC2440
2SC244
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SB1463G
2SC2440G
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2SC2440
Abstract: npn transistors 400V 3A
Text: JMnic Product Specification 2SC2440 Silicon NPN Power Transistors ・ DESCRIPTION ・With TO-220C package ・High voltage ,high speed switching ・High reliability APPLICATIONS ・Switching regulators ・Ultrasonic generators ・High frequency inverters ・General purpose power amplifiers
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PDF
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2SC2440
O-220C
2SC2440
npn transistors 400V 3A
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Features ■ Package • High collector-emitter voltage (Base open) VCEO
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Original
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PDF
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2002/95/EC)
2SB1463G
2SC2440G
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463G Silicon PNP epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high breakdown voltage low-noise amplification Complementary to 2SC2440G • Package • High collector-emitter voltage (Base open) VCEO
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2002/95/EC)
2SB1463G
2SC2440G
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2SC2440
Abstract: 2sc244 JEDEC 2a
Text: 2SC2440 FUJI POWER TRANSISTOR TRIPLE DIFFUSED PLANER TYPE HIGH VOLTAGE,HIGH SPEED SWITCHING Outline Drawings TO-220AB Features High voltage,High speed switching High reliability Applications 1 : Base 2 : Collector Switching regulators Ultrasonic generators
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2SC2440
O-220AB
2SC2440
2sc244
JEDEC 2a
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2SB1463J
Abstract: SC-89
Text: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SB1463J Silicon PNP epitaxial planar type 1.60+0.05 –0.03 0.12+0.03 –0.01 M Di ain sc te on na tin nc ue e/ d 1.00±0.05 Unit: mm 0.80±0.05 For high breakdown voltage low-noise amplification
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2002/95/EC)
2SB1463J
2SC2440J
2SB1463J
SC-89
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SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
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5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
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2SC2412KLN
Abstract: 2SC2494 2SC2431 HF 450 2SC2442 2SC2494-MA 2SC2410S 2SC2411K 2SC2412K 2SC2427
Text: - 124 - w X Ë fà Ta=25U *EP(áTc=25'G m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465
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2SC2410S
2SC2411K
2SC2412K
2SC2412KLN
2SC2413K
2SC2427
2SC2428
SC-59
2SC2463
900MHz
2SC2494
2SC2431
HF 450
2SC2442
2SC2494-MA
2SC2427
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2SC2494
Abstract: 2SC2553 2SC2431 2SC2534 2SC2495 2SC2430 2SC2443 2SC2530 2sc2555 2SC2410S
Text: - 124 - w X Ë f à m 2SC2410S 2SC2411K 2SC2412K 2SC2412KLN 2SC2413K 2SC2427 2SC2428 2SC2429 2SC2429A 2SC2430 2SC2431 2SC2432 2SC2433 2SC2434 2SC2437 2SC2438 2SC2440 2SC2442 2SC2443 2SC2458 2SC2458L 2SC2459 2SC2462 2SC2463 2SC2464 2SC2465 2SC2466 2SC2467 2SC2468
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2SC2410S
2SC2411K
2SC2412K
2SC2412KLN
2SC2413K
2SC2427
2SC2428
2SC2543
2SC2544
2SC2545
2SC2494
2SC2553
2SC2431
2SC2534
2SC2495
2SC2430
2SC2443
2SC2530
2sc2555
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2sc2440
Abstract: No abstract text available
Text: 2SC2440 H ± ' < t7 - Y :7 > Ì > Z . 9 N P N = f ii£ t f t ^ U — -f-M TRIPLE DIFFUSED PLANER TYPE *WJ±, * * * f HIGH VOLTAGE, HIGH SPEED SWITCHING • fl-Jfé'ÎîÈ : Outline Drawings 4.5*02 13 Features • ¡iifiiS,iSijSx -f 'y + 's V • S iffS t i
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2SC2440
O-22QAB
SC-46
I95t/R89)
Shl50
2sc2440
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2SC2440
Abstract: No abstract text available
Text: 2SC2440 % ± '< r7 - \ =7 > tS * . 9 N P N = f i i £ t f t ^ U — -f-M T R IPLE D IFFU SED PLA N ER TYPE *WJ±, * * * f HIGH VOLTAGE, HIGH SPEED SWITCHING • fl-Jfé'ÎîÈ : Outline Drawings • ¡iif iiS , • S if f S t £ Features "/¥>? High voltage, high speed switching
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2SC2440
O-22QAB
SC-46
2SC2440
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C2482
Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Text: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC
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2SD1085
2SC3468
2SC2551
2SC3415
2SD1069
2SD772
2SC1570
2SC941TM
2SC458
2SC3311A
C2482
C3468
2SC2663
2SC3208
c2981
C2787
M 3211
2sc1510
C1573
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6DI15S-050
Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Text: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140
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1D500A-030
1DI200E-055
1DI200K-055
1DI200M-120
1DI200MA-050
1DI200Z-100
1DI200Z-120
1DI200ZN-120
1DI200ZP-120
1DI300M-050
6DI15S-050
1MB1400N-120
6D130Z-120
ENC471
2sk2850
2sk2761
ESJA58-06A
1MBH-60D
1mbh60d-090a
6DI15S050
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ET-191
Abstract: No abstract text available
Text: TRANSISTORS IC AM PS Max. 3 5 IC AM PS Max. VceoV Pc su s W 800 Pc W 80 Device Type NPN 2SC3550 400 60 180 80 2SD921 800 40 Device Type NPN 2SC2929 2SC3549 800 80 2SC3551 50 25 2SD1157 1000* 80 ET383 200 25 2SD834 250 60 2SD1073 100 80 ET393 -80 30 2SB862*
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2SD921
2SC2929
2SC3549
2SC3551
2SD1157
2SC3550
ET383
2SD834
2SD1073
ET393
ET-191
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2sc4977
Abstract: transistor 2SC4977 25c2625 2SC2625 2SC2047 2SC4977 transistor ET-191 2SC4795 2SC3320 ET391
Text: FUJI <S SWITCHING TRANSISTORS B| TO-220AB T O -3 P • t ' 5 /% ■m * 1 * 1 T O -3 P F BBS 1C AMPS Max. 3 80 Device Type NPN 2SC3550 180 80 2SD921 800 80 2SC3551 1000* 80 ET383 V ceoV sus 800 5 Pc W IC AMPS Max. 400 60 Device Type NPN 2SC2929 800 40 2SC3549
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2SC3550
2SD921
2SC3551
ET383
2SC3505
2SC4419
2SC2656
2SC3030
ET190
2SD923
2sc4977
transistor 2SC4977
25c2625
2SC2625
2SC2047
2SC4977 transistor
ET-191
2SC4795
2SC3320
ET391
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2sb757
Abstract: 2SC3551
Text: « /\°7 —x / W X / Power Devices • / S '7 -h 7 i- iS / K f l'7 Power Transistor (Molded types) r a iÎŒ i li M T .'f y 3 - > ? b ~ 7 > v High voltage high speed switching transisitors V it e Voits tc Cent. Amps. Pc : fere (Mié.) Watts to Amps. VCE
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2SC3549
2SC3550
2SC3551
2SC3505
2SC4419
2SC3030
O-22QAB
1D500A-030
ETN35-030
ETM36-030
2sb757
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