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    2SC2655 NPN TRANSISTOR Search Results

    2SC2655 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC2655 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C2655 NPN Transistor

    Abstract: C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. O-92MOD C2655 NPN Transistor C2655 toshiba marking code transistor 2sc2655 C2655 Y transistor C2655 BR C2655 C2655 characteristics C2655 Y 06 C2655 TRANSISTOR 2SC2655

    C2655 NPN Transistor

    Abstract: transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. 15oducts C2655 NPN Transistor transistor C2655 c2655 c2655 transistor C2655 characteristics C2655 Y C2655(Y)-T 2sc2655 c2655 equivalent BR C2655

    C2655 NPN Transistor

    Abstract: transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. C2655 NPN Transistor transistor C2655 C2655 C2655 Y toshiba marking code transistor 2sc2655 C2655 transistor c2655 equivalent C2655 characteristics BR C2655 C2655 Y 06

    C2655 NPN Transistor

    Abstract: C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655
    Text: 2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW


    Original     		PDF 2SC2655 2SA1020. C2655 NPN Transistor C2655 transistor C2655 C2655 Y BR C2655 C2655 characteristics C2655 Y 06 c2655 transistor 2SC2655 Silicon NPN Epitaxial Type toshiba marking code transistor 2sc2655

    equivalent 2SC2655

    Abstract: 2sc2655 2SC2655 datasheet
    Text: 2SC2655 2SC2655 TO-92MOD TRANSISTOR NPN FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage V(BR)CBO: 50 V Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 2SC2655 O-92MOD 500mA equivalent 2SC2655 2sc2655 2SC2655 datasheet

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92MOD FEATURES z Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) z High Speed Switching Time: tstg=1 s(Typ.) z Complementary to 2SA1020


    Original     		PDF O-92MOD 2SC2655 O-92MOD 2SA1020 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92L FEATURES z Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A) z High Speed Switching Time: tstg=1 s(Typ.) z Complementary to 2SA1020 1.EMITTER


    Original     		PDF O-92L 2SC2655 O-92L 2SA1020 CHARACTERISTI25â

    2sc2655

    Abstract: equivalent 2SC2655 2SA1020
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors 2SC2655 TRANSISTOR NPN TO-92L FEATURES z Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) z High speed switching time: tstg=1 s(Typ.) z Complementary to 2SA1020 1.EMITTER


    Original     		PDF O-92L 2SC2655 O-92L 2SA1020 500mA 2sc2655 equivalent 2SC2655 2SA1020

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC2655 2SC2655L-x-AE3-R 2SC2655L-x-T9N-B 2SC2655L-x-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-AE3-R 2SC2655Gx-T9N-B 2SC2655Gx-T9N-K 2SC2655Gx-T9N-R OT-23

    2sc2655

    Abstract: equivalent 2SC2655 transistor 2SC2655
    Text: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655 O-92L 2sc2655 equivalent 2SC2655 transistor 2SC2655

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC2655 2SC2655Gx-AE3-R 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655L-x-T9N-K 2SC2655Gx-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-T9N-R OT-23 O-92NL

    2sc2655

    Abstract: 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L 2SC2655L-x-AE3-R QW-R211-013 2SC2655 NPN Transistor 2SC2655-G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: tstg=1.0 s (Typ.) Lead-free: 2SC2655L Halogen-free: 2SC2655G


    Original     		PDF 2SC2655 2SC2655L 2SC2655G 2SC2655-x-AE3-R 2SC2655L-x-AE3-R 2SC2655Gx-AE3-R 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655-x-T9N-K 2sc2655 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L QW-R211-013 2SC2655 NPN Transistor 2SC2655-G

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SC2655 TO-92MOD TRANSISTOR NPN 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM: 900 mW (Tamb=25℃) 3. BASE Collector current 2 A ICM: Collector-base voltage


    Original     		PDF O-92MOD 2SC2655 O-92MOD 500mA

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SC2655 NPN EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE sat = 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.) 1 TO-92NL 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ,unless otherwise specified )


    Original     		PDF 2SC2655 O-92NL QW-R211-013

    2sc2655

    Abstract: 2c2655 2SC2655L transistor 2SC2655
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES *Low saturation voltage VCE SAT = 0.5V (Max.) *High speed switching time tstg=1.0µs (Typ.) 1 TO-92NL *Pb-free plating product number: 2SC2655L


    Original     		PDF 2SC2655 O-92NL 2SC2655L 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K 2SC2655-x-T9N-R 2SC2655L-x-T9N-R 2sc2655 2c2655 2SC2655L transistor 2SC2655

    2sc2655

    Abstract: 2SC2655 NPN Transistor equivalent 2SC2655
    Text: ST 2SC2655 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655 O-92L 2sc2655 2SC2655 NPN Transistor equivalent 2SC2655

    equivalent 2SC2655

    Abstract: 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655
    Text: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655 equivalent 2SC2655 2sc2655 1.5A NPN power transistor TO-92 transistor 2SC2655

    equivalent 2SC2655

    Abstract: transistor 2SC2655 2sc2655 2SC2655 NPN Transistor 2002 TO92
    Text: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655 equivalent 2SC2655 transistor 2SC2655 2sc2655 2SC2655 NPN Transistor 2002 TO92

    transistor 2SC2655

    Abstract: 2sc2655 equivalent 2SC2655 2SC2655 NPN Transistor ST2SC2655 1.5A NPN power transistor TO-92
    Text: ST 2SC2655 TO-92 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into two groups O and Y, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SC2655 transistor 2SC2655 2sc2655 equivalent 2SC2655 2SC2655 NPN Transistor ST2SC2655 1.5A NPN power transistor TO-92

    2sc2655

    Abstract: 1345 NPN
    Text: 2SC2655 NPN General Purpose Transistors P b Lead Pb -Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS（Tamb=25℃ Symbol Parameter Test unless otherwise conditions specified） MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO


    Original     		PDF 2SC2655 O-92MOD 500mA 19-Feb-09 O-92MOD 50Typ 2sc2655 1345 NPN

    2SC2655 Silicon NPN Epitaxial Type

    Abstract: 2SA1020 2SC2655
    Text: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VfJE (sat) “ 0.5V (Max.) (If; = lA) • High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 Silicon NPN Epitaxial Type 2SA1020 2SC2655

    2SC2655

    Abstract: 2SC2655 Silicon NPN Epitaxial Type 2SA1020
    Text: TOSHIBA 2SC2655 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. 75MAX O-92MOD 2SC2655 2SC2655 Silicon NPN Epitaxial Type 2SA1020

    2SC2655

    Abstract: 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y
    Text: T O SH IB A 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : VCE (sat) = 0.5V (Max.) (IC = 1A) High Speed Switching Time : tgtg =1.0/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. 2SC2655 2SC2655 Silicon NPN Epitaxial Type transistor 2SC2655 2sc2655 y

    2SC2655 Silicon NPN Epitaxial Type

    Abstract: 2SA1020 2SC2655
    Text: TO SH IBA 2SC2655 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2655 5.1 MAX. POWER SWITCHING APPLICATIONS • • • Unit in mm Low Saturation Voltage : v CE(sat) = °-5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		PDF 2SC2655 2SA1020. O-92MOD -55-15truments, 2SC2655 Silicon NPN Epitaxial Type 2SA1020 2SC2655