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    2SC2655 SOT Search Results

    2SC2655 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    2SC2655 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.) „ ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC2655 2SC2655L-x-AE3-R 2SC2655L-x-T9N-B 2SC2655L-x-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-AE3-R 2SC2655Gx-T9N-B 2SC2655Gx-T9N-K 2SC2655Gx-T9N-R OT-23

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS  FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: TSTG=1.0 s (Typ.)  ORDERING INFORMATION Ordering Number


    Original     		PDF 2SC2655 2SC2655Gx-AE3-R 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655L-x-T9N-K 2SC2655Gx-T9N-K 2SC2655L-x-T9N-R 2SC2655Gx-T9N-R OT-23 O-92NL

    2sc2655

    Abstract: 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L 2SC2655L-x-AE3-R QW-R211-013 2SC2655 NPN Transistor 2SC2655-G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ FEATURES * Low saturation voltage: VCE SAT = 0.5V (Max.) * High speed switching time: tstg=1.0 s (Typ.) Lead-free: 2SC2655L Halogen-free: 2SC2655G


    Original     		PDF 2SC2655 2SC2655L 2SC2655G 2SC2655-x-AE3-R 2SC2655L-x-AE3-R 2SC2655Gx-AE3-R 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655Gx-T9N-B 2SC2655-x-T9N-K 2sc2655 2SC2655G transistor 2SC2655 equivalent 2SC2655 2SC2655L QW-R211-013 2SC2655 NPN Transistor 2SC2655-G

    equivalent 2SC2655

    Abstract: 2sc2655 transistor 2SC2655 2SC2655 NPN Transistor 2SC2655L 2sc2655 SOT 2sc2655 y common emitter amplifier HIGH SPEED SWITCHING NPN SOT23
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS „ 1 FEATURES TO-92NL *Low saturation voltage VCE SAT = 0.5V (Max.) *High speed switching time tstg=1.0 s (Typ.) 3 2 1 SOT-23 *Pb-free plating product number: 2SC2655L


    Original     		PDF 2SC2655 O-92NL OT-23 2SC2655L 2SC2655-x-AE3-R 2SC2655L-x-AB3-R 2SC2655-x-T9N-B 2SC2655L-x-T9N-B 2SC2655-x-T9N-K 2SC2655L-x-T9N-K equivalent 2SC2655 2sc2655 transistor 2SC2655 2SC2655 NPN Transistor 2SC2655L 2sc2655 SOT 2sc2655 y common emitter amplifier HIGH SPEED SWITCHING NPN SOT23

    2SA1020L

    Abstract: 2SA1020 TO92NL 2SA1020L UTC TO-92NL 2sc2655 SOT89 Complement 2sc2655 2SC2655 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A transistor 2SA1020
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR 1 DESCRIPTION SOT-89 The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES 1 *Low collector saturation voltage: VCE SAT =-0.5V(max.) (IC=-1A)


    Original     		PDF 2SA1020 OT-89 2SA1020 2SC2655 O-92NL 2SA1020L 2SA1020-x-AB3-R 2SA1020L-x-AB3-R 2SA1020-x-T9N-B 2SA1020L-x-T9N-B 2SA1020L TO92NL 2SA1020L UTC TO-92NL 2sc2655 SOT89 Complement 2sc2655 2SC2655 HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A transistor 2SA1020

    2SA1020L UTC

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020L UTC

    2sa1020

    Abstract: 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. „ FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020L-x-AB3-R 2SA1020L-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-AE3-R OT-23 2SA1020G-x-AB3-R 2SA1020L 2SA1020L UTC 2sc2655 sot-23 2sc2655 SOT89 transistor 2SA1020 2SA1020G

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020L-x-AE3-R 2SA1020G-x-AE3-R 2SA1020L-x-AB3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC= -1A)


    Original     		PDF 2SA1020 2SA1020 2SC2655 2SA1020G-x-AE3-R 2SA1020G-x-AB3-R 2SA1020L-x-T9N-B 2SA1020G-x-T9N-B 2SA1020L-x-T9N-K 2SA1020G-x-T9N-K OT-23

    equivalent 2SC2655

    Abstract: 2SA1020 2SC2655 2sc2655 SOT89 2sc2655 SOT HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		PDF 2SA1020 2SA1020 2SC2655 OT-89 250mm2 250mm2 QW-R208-021 equivalent 2SC2655 2SC2655 2sc2655 SOT89 2sc2655 SOT HIGH SPEED SWITCHING TRANSISTOR PNP 50V 15A

    2SA1020

    Abstract: 2SC2655 2sc2655 SOT
    Text: UTC 2SA1020 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and 1 power switching applications. FEATURES *Low collector saturation voltage: VCE sat =-0.5V(max.) (IC=-1A) *High speed switching time: tstg=1.0µs(Typ.)


    Original     		PDF 2SA1020 2SA1020 2SC2655 OT-89 250mm2 QW-R208-021 2SC2655 2sc2655 SOT

    BSY44

    Abstract: 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN 2SC486
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216


    Original     		PDF 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 BSY44 2SC634A SA2720 2n3404 2SC503 2S0220 2SC109A 2N2193 LOW-POWER SILICON NPN

    2sc5088 horizontal transistors

    Abstract: equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a
    Text: 2003-8 BCE0016A PRODUCT GUIDE Power Transistors 2003 http://www.semicon.toshiba.co.jp/eng Toshiba Power Transistors Selection Guide by Function and Application Thank you for purchasing Toshiba semiconductor products. As you may already know, semiconductor products are used in a wide range of fields, both domestic and industrial.


    Original     		PDF BCE0016A 3501C-0109 F-93561, 2sc5088 horizontal transistors equivalent 2SC2655 2sc5858 2sC5200, 2SA1943 2sa1930 transistor equivalent 2SA1941 equivalent 2sc5570 zener diode SMD marking code 27 4F 2sc5200 audio amplifiers smd transistor h2a

    transitron

    Abstract: rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 2N2389 BFY34 SA2710 2SC734 2SC2000M MPS6591 2N2253 2N2253 Sl100 501613 2SC109A 2S0220 A5T2193 2N2351 2N2351A 2N5262 MPS9434 UPI956 HSE146 2SC216


    Original     		PDF 2N2193B NB312E NB312F NB312X NB312Y 2SC486 2N2389 BFY34 SA2710 transitron rca 2n1701 BFY46 2N1711 MOTOROLA 2SC109A 2N1666 2N1619 2N1565 2SC1364 ELECTRON CORP

    2SA1930 2sc5171

    Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
    Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228


    Original     		PDF SC-63/64) SC-62) SC-59 OT-23 2SA1483 2SC3803 2SA1426 2SA1204 2SA1734 2SA2065 2SA1930 2sc5171 tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn

    2sC5200, 2SA1943

    Abstract: 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent
    Text: 2011-4 PRODUCT GUIDE Power Transistors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Power Transistors for Audio Power Amplifiers Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current


    Original     		PDF BCE0016D 2sC5200, 2SA1943 2SA1941 equivalent 2SC5353 equivalent 2sc5198 equivalent amplifier circuit using 2sa1943 and 2sc5200 2SC2383 equivalent tpcp8l01 2SA1962 equivalent 2SC4793 2sa1837 2sA1013 equivalent

    smd transistor h2a

    Abstract: SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A
    Text: 2008-9 PRODUCT GUIDE Power Transistors s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Using a minute pattern and a high-density MET design, Toshiba has achieved high levels of current efficiency. Package type can be selected to yield collector power output


    Original     		PDF BCE0016C E-28831 BCE0016D smd transistor h2a SMD TRANSISTOR H2A NPN transistor smd H2A 2sa1943 amplifier circuit diagram TPCP8L01 2sC5200, 2SA1943 H2A transistor SMD 2sc5200 power amplifiers diagram MARKING SMD PNP TRANSISTOR h2a SMD H2A

    2sC5200, 2SA1943

    Abstract: TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N
    Text: 製品カタログ 2010-4 東芝半導体 製品カタログ パワートランジスタ h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 東芝パワートランジスタについて 機能別・用途別選択早見表 • · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · · 4


    Original     		PDF TTC003 SC-64) BCJ0016F BCJ0016E 2sC5200, 2SA1943 TPCP8L01 TPCP8602 2sC5200 2SA1943 2sc5200 TTC003 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 TTC13003L 2SC3180N

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    2SA1941 amp circuit

    Abstract: 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943
    Text: Semiconductor Catalog Mar. 2013 Bipolar Power Transistors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng Toshiba Bipolar Power Transistors Thank you for purchasing Toshiba semiconductor products. Semiconductor products are used in a wide range of fields, including


    Original     		PDF BCE0016F 2SA1941 amp circuit 2SC3303 2SD880 TO3P package 2SA114 smd transistor h2a 2sb834 amplifier circuit using 2sa1943 and 2sc5200 TOSHIBA BIPOLAR POWER TRANSISTOR amplifier design tta1943

    equivalent 2SC2655

    Abstract: 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA
    Text: TOSHIBA {DI SC RE TE /O PT O} Sb D eT | TCnTESO 0Q07104 0 / — 9097250 TOSHIBA — ^ D I S C R E T E / O P T O _ ~ /' 5 61 07 I 0 4 "" " D 2 f - ¿/ Chip Device For Hybrid IC (2) Power Mini Transistor (Equivalent to SOT-89) Type Application Electrical Characteristic (Ta = 25°C)


    OCR Scan     		PDF 0Q07104 OT-89) T092MOD 2SC2880 2SA949 2SA1200 2SA1201 2SA1202 2SC2882 equivalent 2SC2655 2SA949 equivalent toshiba audio power amplifier 2Sc2229 equivalent 2SC2873 equivalent 2SA1213 equivalent 2SC2655/Y/c2655 equivalent 2SC2655 equivalent transistor marking M sot89 toshiba transistor marking SA

    2N2222A-PL

    Abstract: 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 T p a H 3 M CTopbi N P N c o p T M p o B K a n o H a n p flw e H M r o Kofl: BFP520 BFG410W BFP405 BFP420 BFP450 BFP540 2SC5088 BFG235 BFR91A BF763 BFG540W BFG94 BFR90A BFR91 BFR92A BFR93A


    OCR Scan     		PDF BFP520 OT343R BFG410W BFP405 BFP420 BFP450 2N2222A-PL 2sc3883 2sc9018 BF759 2N3055-DIV SS8050 smd 2S-C3883 2SC945 smd smd 2n3055 bu415a

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


    OCR Scan     		PDF 4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362