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    2SC2669 Search Results

    2SC2669 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2669 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2669 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2669 Unknown Cross Reference Datasheet Scan PDF
    2SC2669 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2SC2669 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2669 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2669 Unknown High Frequency Device Data Book (Japanese) Scan PDF
    2SC2669 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2669 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2669 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2SC2669 Toshiba Transistor Silicon NPN Epitaxial Planar Type (PCT Process) Scan PDF
    2SC2669 Toshiba TRANSISTOR (HIGH FREQUENCY AMPLIFIER APPLICATIONS) Scan PDF
    2SC2669 Toshiba NPN Transistor Scan PDF
    2SC2669 Toshiba TO-92 Mini Package Transistors / Junction FETs Scan PDF
    2SC2669-O Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2669O Toshiba Silicon NPN Epitaxial Planar Transistors Scan PDF
    2SC2669-R Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2669R Toshiba Silicon NPN Epitaxial Planar Transistors Scan PDF
    2SC2669-R Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS) Scan PDF
    2SC2669-Y Unknown Transistor Shortform Datasheet & Cross References Scan PDF

    2SC2669 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2458

    Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


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    2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A 2N2458 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253 PDF

    bfw34 diode

    Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386


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    2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2N479 2N479A bfw34 diode LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34 PDF

    2SC2669

    Abstract: 2sc2669-o
    Text: 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2669 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV, IF stage. Absolute Maximum Ratings (Ta = 25°C)


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    2SC2669 2SC2669 2sc2669-o PDF

    2SC2669

    Abstract: 2SC2669-O 2SC2669-R 2SC2669-Y
    Text: 2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2669 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C)


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    2SC2669 2SC2669 2SC2669-O 2SC2669-R 2SC2669-Y PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


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    BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS PDF

    3SK73

    Abstract: 3SK73Y 3SK101 3SK73 gr SC1815 2SK241GR 3SK73-Y 3SK101-Y 2SC2669 2SK241-GR
    Text: [8] [ 8 ] 応用回路例 1 kΩ T6 S3 1 L5 T8 3 1.2 kΩ F 1 kΩ 0.01 µF 47 kΩ 0.01 µF 1.5 kΩ 4 x 20 BET T7 390 Ω L7 0.04 µF 10 kΩ 1 kΩ 0.01 µF 10 µF/6 WV 6 WV 10 kΩ 2 1.2 kΩ 3.3 kΩ 330 Ω 50 µF/6 WV 0.005 µF −200 µF +6 WV 6 V


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    1SV160 2SC1959 2SC1815 2SC2669 1SV102 3SK73 3SK73Y 3SK101 3SK73 gr SC1815 2SK241GR 3SK73-Y 3SK101-Y 2SC2669 2SK241-GR PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


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    2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 PDF

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192 PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    2SC2669

    Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
    Text: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. 4.2 MAX. High Power Gain : Gpe = 30dB (Typ.) (f= 10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage.


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    2SC2669 2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y PDF

    2SC2669

    Abstract: wf-5 transistor
    Text: TO SHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX. ivi A X i ivi UM RAT iN G $ (Ta = 25°C)


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    2SC2669 55MAX. 2SC2669 wf-5 transistor PDF

    2SC2669

    Abstract: 2SC2669-0 2SC2669-R 2SC2669-Y
    Text: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. 4.2MAX.


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    2SC2669 55MAX. 2SC2669 2SC2669-0 2SC2669-R 2SC2669-Y PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2669 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2669 Unit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS • • High Power Gain : Gpe = 30dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV, IF Stage. | 4.2M AX.


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    2SC2669 PDF

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 2SA1245 167 *2SC1923 2SC2996 266 * 2N3905 2SA1255 170 *2SC1959 2SC3011 272


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    2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737 PDF

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


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    2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr PDF

    2SC1815 2SA1015

    Abstract: 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1923 2SC1815
    Text: Transistors T ransistors & D iodes fo r A udio Application A M /FM Tuner Frequency Package . Super Mini SC-59 TO-92 (SC-43) Mini 2SC1923 2SC2668 2SC2714 USM (SC-70) SSM SMQ (SC-61) 2SC4215 2SC4915 3SK126 USQ SMV FM8 SMS TA4007F 3SK160 RF FM 2SK161


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    SC-43) 2SC1923 2SC2668 SC-59) 2SC2714 SC-70) 2SC4215 2SC4915 SC-61) 3SK126 2SC1815 2SA1015 2SK117 2sk389 2sj74 2SC2240 2SC4667 2sc2458 2sk246 2SC1815 PDF

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


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    T258-OMI FAX06 2SC144 2SD466 2sc5266 PDF

    TA8172AF

    Abstract: TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P
    Text: Index of Type Number Type Number 015Z10 015Z11 015Z12 015Z2.0 015Z2.0-12 015Z2.2 015Z2.4 015Z2.7 015Z3.0 015Z3.3 015Z3.6 015Z3.9 015Z4.3 015Z4.7 015Z5.1 015Z5.6 015Z6.2 015Z6.8 015Z7.5 015Z8.2 015Z9.1 02CZ10 02CZ11 0 2 C Z 12 0 2 C Z 13 0 2 C Z 15 0 2 C Z 16


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    015Z10 015Z11 015Z12 015Z2 015Z3 TA8172AF TB 1226 BN TA8859P mg75n2ys40 t6961A TA8242AK ta8644n 7378P ta8310 7628P PDF

    2sc2240 equivalent

    Abstract: 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent
    Text: Surface Mount Devices 1 Super-Mini Transistors (SOT-23MOD.) Electrical Characteristics (Ta=25’ C) Application Type No. le (mA) PC (mW) TJ rc ) Mark Complementary Remarks (TO-92 Mini-transistor) Equivalent TO-92 Type No. 2SA1162 Low-frequency oompllflcation


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    OT-23MOD. 2SC2712 2SA1162 2SC2713 2SA1163 2SC2859 2SA1182 2SC3138 2SA1255 2SC3265 2sc2240 equivalent 2sc1815 equivalent 2sc3112 equivalent 2sa1015 equivalent 2sc2120 equivalent 2sc2458 equivalent 2Sc1959 equivalent 2SC1627 equivalent 2sc2878 equivalent 2SA1091 equivalent PDF

    2SC2669

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR HIGH FREQUENCY AM PLIFIER APPLIC A TION S. U n it in mm • High Power Gain : Gpe = 30dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV, IF Stage. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC


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    2SC2669 2SC2669 PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


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    PDF

    2SB415

    Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
    Text: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~


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    4000HÂ 2SB415 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362 PDF