2SA1141
Abstract: 2sc2681
Text: SavantIC Semiconductor Product Specification 2SA1141 Silicon PNP Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SC2681 ·High transition frequency · APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier
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2SA1141
2SC2681
2SA1141
2sc2681
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2sc2681
Abstract: 2SA1141
Text: Inchange Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・Complement to type 2SA1141 ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier
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2SC2681
2SA1141
2sc2681
2SA1141
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2sc2681
Abstract: 2SA1141
Text: SavantIC Semiconductor Product Specification 2SC2681 Silicon NPN Power Transistors DESCRIPTION •With TO-3PFa package ·Complement to type 2SA1141 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier PINNING
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2SC2681
2SA1141
2sc2681
2SA1141
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2SA1141
Abstract: 2sc2681 2sa114
Text: Inchange Semiconductor Product Specification 2SA1141 Silicon PNP Power Transistors • DESCRIPTION ·With TO-3PFa package ·Complement to type 2SC2681 ·High transition frequency APPLICATIONS ·Audio frequency power amplifier ·High frequency power amplifier
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2SA1141
2SC2681
2SA1141
2sc2681
2sa114
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2SA1141
Abstract: 2sc2681
Text: JMnic Product Specification 2SA1141 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-3PFa package ・Complement to type 2SC2681 ・High transition frequency APPLICATIONS ・Audio frequency power amplifier ・High frequency power amplifier PINNING PIN
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2SA1141
2SC2681
2SA1141
2sc2681
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2sc2681 transistor
Abstract: 2SA1141 2sc2681 2SA114 TRANSISTOR 2SA1141
Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1141 DESCRIPTION •Collector-Emitter Breakdown VoltageV BR CEO= -115V(Min) ·Good Linearity of hFE ·Complement to Type 2SC2681 APPLICATIONS ·Audio frequency power amplifier
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2SA1141
-115V
2SC2681
2sc2681 transistor
2SA1141
2sc2681
2SA114
TRANSISTOR 2SA1141
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2sc2681 transistor
Abstract: No abstract text available
Text: , One. j TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 2SA1141 Silicon PNP Power Transistor DESCRIPTION • Collector-Emitter Breakdown VoltageV(BR)CEo=-115V(Min) • Good Linearity of hFE ^^^^^^P^^
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2SA1141
-115V
2SC2681
2sc2681 transistor
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2u 62 diode
Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20
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SDT3208
SDT7140
BDT95
BDT96
2u 62 diode
KT808A
diode 2U 81
kt808am
2N3076
2SD867Y
kt808
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STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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THINKI transistor catalog
Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003
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2SA914
O-126
2SA900
2SC2556
2SC2556A
LM317K
O-220
LM317T
THINKI transistor catalog
audio amplifier ic
bd249c catalog
AUDIO HIGH POWER AMPLIFIER
3DD301
2sc3229
2SA747
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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transistor NEC 2SK2500
Abstract: NEC 2SK2500 2SK2500 N13T1 2SK2500 equivalent UPC1037HA UPC648C 2sh25 2sk2500 transistor 2SH24
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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MIL-HDBK-217
C11178EJCV0IF
transistor NEC 2SK2500
NEC 2SK2500
2SK2500
N13T1
2SK2500 equivalent
UPC1037HA
UPC648C
2sh25
2sk2500 transistor
2SH24
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STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components
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100-up)
STk442-130
M56730ASP
PAC011A
PAC010A
UPC2581
PAL005A
stk413-020a
upc2581v
ecg semiconductors master replacement guide
STRS5717
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2sc2681 transistor
Abstract: 2sc2681 2SA1141
Text: 2SA1141/2SC2681 ft« » « * }* !!. PNP Epitaxial/NPN Silicon Triple Diffused Transistor Audio Frequency Power Amplifier, High Frequency Power Amplifier o f T A<giv>„ fT —80 M H z N P N , fT = 90 M H z ( P N P ) HMm/ PACKAGE DIMENSIONS oh FE, (Unit : mm)
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2SA1141/2SC2681
2SA1141
2SC2681
2SAI141/2SC2681
Test/PWS350
2sc2681 transistor
2sc2681
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2SC2719
Abstract: 2sc2720 2sc2681 CRM 1150 138D 2SA1133 2SC2660 2SC2710 2SC2716 HJR 7 200
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SC2719
255nS
225nS
2SC2720
540nS
490nS
2SC2721
200/unit.
2sc2681
CRM 1150
138D
2SA1133
2SC2660
2SC2710
2SC2716
HJR 7 200
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pc1270h
Abstract: uPC1270H UPC1237H 1SS53 pc1237h PC-1270H m5mo uPC1270 2SC849 2SA2681
Text: BIPOLAR ANALOG INTEGRATED CIRCUIT ju P C 1 2 7 0 H 3 0 -5 0 W POWER AMPLIFIER DRIVER DE SC R IPTIO N iiPC 1270H is designed fo r use w ith a H i-F i pow er a m p lifie r driver. It is com posed o f a d iffe re n tia l am p lifie r, a predriver, a d river and p ro te c tio n c irc u it.
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1270H
2SAII41
2SC2681
Vcc-36
pc1270h
uPC1270H
UPC1237H
1SS53
pc1237h
PC-1270H
m5mo
uPC1270
2SC849
2SA2681
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pc1225h
Abstract: NEC Relay MR31 UPC1225H UPC1225H equivalent mPC1225H uPC1225 uPC1225H ic 1225H C1225H pc1237h
Text: N E C ELECTRONICS E L E C TR O N IC S INC S 642 75 25 N E C INC OSE D J b 4E7SES [][]EE7Eh 0 1~~ 05E 22726 D - BIPOLAR ANALOG INTEGRATED C IR C U IT M PC1225H T-7V-C5-C 3 0 - 5 0 W POWER A M P LIFIE R DRIVER DESCRIPTION liP C1225H is designed fo r use w ith a Hi-Fi power amplifier driver. It is composed of a differential amplifier, a pre driver, a
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uPC1225H
C1225H
M27S2S
0D227M2
pc1225h
NEC Relay MR31
UPC1225H equivalent
mPC1225H
uPC1225
uPC1225H ic
1225H
pc1237h
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PC1270H
Abstract: mPC1237 NEC Relay MR31 mPC1270h mPC1237H NEC MR31 RELAY UPC1270H ISS53 mpc1270 PC1224H
Text: Ñ~ E C ELECTRONICS INC OSE D | bMEVSES □□SSflE'ì D 64 27 525 N E C E LE CT RONIC S INC 05E 22829 D BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ ¿ P C 1 2 7 0 H T-7 9'os-oí 3 0 - 5 0 W POWER AMPLIFIER DRIVER D E S C R IP TIO N ¿/PC1270H is designed fo r use w ith a H i-Fi power am plifier driver. It is composed o f a differential amplifier,
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uPC1270H
b427S2S
2SA1141
2SC2681
PC1270H
mPC1237
NEC Relay MR31
mPC1270h
mPC1237H
NEC MR31 RELAY
ISS53
mpc1270
PC1224H
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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2SC144
Abstract: 2SD466 2sc5266
Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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T258-OMI
FAX06
2SC144
2SD466
2sc5266
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