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    2SC2712-GR LG Search Results

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    Toshiba America Electronic Components 2SC2712GR(LG)-TE85

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    Bristol Electronics 2SC2712GR(LG)-TE85 3,000 34
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    Quest Components 2SC2712GR(LG)-TE85 2,400
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    2SC2712-GR LG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC2712

    Abstract: No abstract text available
    Text: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic.


    Original     		PDF 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 2SA1162 OT-23

    2SC2712GR

    Abstract: 2sc2712
    Text: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic.


    Original     		PDF 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 2SA1162 OT-23 2SC2712GR

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • NPN Plastic-Encapsulate Transistors


    Original     		PDF 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 2SA1162 OT-23

    2SC2712GR

    Abstract: 2SC2712 2SC2712Y
    Text: MCC 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • Complementary to 2SA1162 x Case Material: Molded Plastic. UL Flammability


    Original     		PDF 2SC2712 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 2SA1162 OT-23 2SC2712GR 2SC2712 2SC2712Y

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • NPN Plastic-Encapsulate Transistors


    Original     		PDF 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL OT-23 2SA1162

    2SC2712BL

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Plastic-Encapsulate Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL OT-23 2SA1162 2SC2712BL

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • NPN Plastic-Encapsulate Transistors Lead Free Finish/RoHS Compliant "P" Suffix designates


    Original     		PDF 2SC2712-O 2SC2712-Y 2SC2712-GR 2SC2712-BL 2SA1162 OT-23

    2SC2712

    Abstract: 2SC2712G 2SC2712L 2SC2712-G R 2SC2712-Y 2SC2712-G sot-323 Marking LG 2SC2712Y transistor 5 gr
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR „ FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		PDF 2SC2712 150mA 2SC2712L 2SC2712G 2SC2712-x-AE3-R 2SC2712-x-AL3-R 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2SC2712 2SC2712G 2SC2712L 2SC2712-G R 2SC2712-Y 2SC2712-G sot-323 Marking LG 2SC2712Y transistor 5 gr

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		PDF 2SC2712 150mA 2SC2712L-x-AE3-R 2SC2712G-x-AE3-R 2SC2712L-x-AL3-R 2SC2712G-x-AL3-R 2SC2712L-x-T92-R 2SC2712G-x-T92-R OT-23 OT-323

    2SC2712

    Abstract: 2SC2712-G R 2SC2712Y marking LG sot-23 TRANSISTOR BL 100 2SC2712-G 2SC2712L 2SC2712-O 2SC2712-Y
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR 3 FEATURES * High Voltage and High Current : VCEO=50V, IC=150mA Max. * Excellent hFE Linearity : hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		PDF 2SC2712 150mA OT-23 2SC2712L 2SC2712-x-AE3-R 2SC2712L-x-AE3-R QW-R206-029 2SC2712 2SC2712-G R 2SC2712Y marking LG sot-23 TRANSISTOR BL 100 2SC2712-G 2SC2712L 2SC2712-O 2SC2712-Y

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2712 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER NPN TRANSISTOR  FEATURES * High Voltage and High Current: VCEO=50V, IC=150mA Max. * Excellent hFE Linearity: hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.) * High hFE * Low Noise


    Original     		PDF 2SC2712 150mA 2SC2712G-x-AE3-R 2SC2712G-x-AL3-R 2SC2712L-x-T92-R 2SC2712G-x-T92-R OT-23 OT-323 OT-23/SOT-323 2SC2712-Y

    2SC2712

    Abstract: sot-23 Marking LG MARKING LG Weitron SOT 23 LY j y w sot23
    Text: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage


    Original     		PDF 2SC2712 OT-23 10Vdc, 10mAdc) OT-23 2SC2712 sot-23 Marking LG MARKING LG Weitron SOT 23 LY j y w sot23

    sot-23 Marking LG

    Abstract: 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SC2712 2SA1162. OT-23 BL/SSSTC021 sot-23 Marking LG 2SC2712 SOT 23 LY LY SOT23 transistor marking LG MARKING Lg SOT23 2SA1162 marking LG sot-23 marking LY sot-23 transistor marking code lg

    Untitled

    Abstract: No abstract text available
    Text: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES z Low noise：NF=1dB Typ. ,10 dB(Max). z Complementary to 2SA1162. z High voltage and high current. z High hFE linearity. 2SC2712 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications.


    Original     		PDF 2SC2712 2SA1162. OT-23 BL/SSSTC021

    smd transistor LY

    Abstract: lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG
    Text: Transistors SMD Type Silicon NPN Epitaxial Type Transistor 2SC2712 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features +0.1 1.3-0.1 700 1 Low noise: NF = 1dB typ. , 10dB (max) 0.55 High hFE: hFE = 70 +0.1 2.4-0.1 Excellent hFE linearity : hFE (IC = 0.1 mA)/ hFE (IC = 2 mA)= 0.95 (typ.)


    Original     		PDF 2SC2712 OT-23 smd transistor LY lg smd transistor smd transistor marking BL smd transistor MARKING lg smd transistor marking LL smd transistor LL smd transistor NF smd marking ly smd Transistor LG smd marking LG

    sot-23 Marking LG

    Abstract: marking LL SOT-23 f1 transistor sot-23 LY SOT-23 SOT 23 LY 2sc2712
    Text: 2SC2712 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features — Low Noise: NF=1 dB (Typ),10dB(MAX) — Complementary to 2SA1162 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V


    Original     		PDF OT-23 2SC2712 OT-23 2SA1162 100mA, sot-23 Marking LG marking LL SOT-23 f1 transistor sot-23 LY SOT-23 SOT 23 LY 2sc2712

    Untitled

    Abstract: No abstract text available
    Text: 2SC2712 3 1 2 SOT-23 WEITRON http://www.weitron.com.tw 1/4 12-Dec-2013 2SC2712 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted (Countinued) Characteristics Symbol Min Typ Unit Max ON CHARACTERISTICS DC Current Gain (IC= 2 mAdc, VCE= 6.0 Vdc) Collector-Emitter Saturation Voltage


    Original     		PDF 2SC2712 OT-23 12-Dec-2013 10Vdc, 10mAdc) OT-23

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC2712 2SA1162

    2SC2712

    Abstract: 2SA1162 sot-23 Marking LG
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2712 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURE • Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		PDF OT-23 OT-23 2SC2712 2SA1162 100mA, 2SC2712 2SA1162 sot-23 Marking LG

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating


    Original     		PDF 2SA1162 2SC2712 OT-23 60Vdc

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2SC2712 Features • • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Case Material: Molded Plastic.


    Original     		PDF 2SC2712 2SA1162 OT-23 60Vdc

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2712 Features • NPN Plastic-Encapsulate Transistors Complementary to 2SA1162 Maximum Ratings Symbol VCEO VCBO VEBO IC PC TJ TSTG Rating


    Original     		PDF 2SA1162 2SC2712 OT-23 60Vdc

    Untitled

    Abstract: No abstract text available
    Text: SOT-23 Plastic-Encapsulate Transistors SOT-23 1. BASE 2. EMITTER TRANSISTOR NPN 3. COLLECTOR 150 2. 4 1. 3 mW (Tamb=25℃) 0. 95 0. 4 2. 9 Collector current 150 mA ICM: Collector-base voltage 60 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF OT-23 OT-23 2SC2712 100mA,

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE 2. EMITTER TRANSISTOR（ NPN ） 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol １．０ FEATURE Power dissipation PCM : 150mW（Tamb=25℃）


    Original     		PDF OT-23 150mWï 150mA 2SC2712 Colle0-700 037TPY 950TPY 550REF 022REF