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    2SC2881 Search Results

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    2SC2881 Price and Stock

    Micro Commercial Components 2SC2881-Y-TP

    Interface
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    DigiKey 2SC2881-Y-TP Bulk 1,000
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    Mouser Electronics 2SC2881-Y-TP
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    Micro Commercial Components 2SC2881-O-TP

    TRANS NPN 120V 0.8A SOT89
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    DigiKey 2SC2881-O-TP Reel 20,000
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    Toshiba America Electronic Components 2SC2881-Y(TE12L,ZC

    PB-F POWER TRANSISTOR PW-MINI PC
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    DigiKey 2SC2881-Y(TE12L,ZC Reel 1,000
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    2SC2881-Y(TE12L,ZC Digi-Reel 1
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    2SC2881-Y(TE12L,ZC Cut Tape 1
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    Mouser Electronics 2SC2881-Y(TE12L,ZC 3,361
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    Verical 2SC2881-Y(TE12L,ZC 145 49
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    Quest Components 2SC2881-Y(TE12L,ZC 857
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    Chip1Stop 2SC2881-Y(TE12L,ZC Cut Tape 145
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    EBV Elektronik 2SC2881-Y(TE12L,ZC 19 Weeks 1,000
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    Toshiba America Electronic Components 2SC2881-Y(TE12L,C)

    Trans GP BJT NPN 120V 0.8A 4-Pin(3+Tab) PW-Mini T/R - Tape and Reel (Alt: 2SC2881-Y(TE12L,C))
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    Avnet Americas 2SC2881-Y(TE12L,C) Reel 16 Weeks 1,000
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    Toshiba America Electronic Components 2SC2881-Y(TE12LZC

    Transistor NPN 120V 3-Pin SC-62 - Tape and Reel (Alt: 2SC2881-Y(TE12L,ZC)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2SC2881-Y(TE12LZC Reel 12 Weeks 1,000
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    Avnet Asia 2SC2881-Y(TE12LZC 24 Weeks 1,000
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    2SC2881 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC2881 Kexin Voltage Amplifier Applications Original PDF
    2SC2881 Toshiba NPN Transistor Original PDF
    2SC2881 Unisonic Technologies VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS Original PDF
    2SC2881 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2SC2881 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    2SC2881 Unknown Transistor Substitution Data Book 1993 Scan PDF
    2SC2881 Unknown The Japanese Transistor Manual 1981 Scan PDF
    2SC2881 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2SC2881 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2SC2881 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC2881 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2SC2881 Toshiba Silicon NPN transistor for power amplifier applications Scan PDF
    2SC2881 Toshiba TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) Scan PDF
    2SC2881 Toshiba SOT-89 Transistors Scan PDF
    2SC2881-O Toshiba 2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal Original PDF
    2SC2881O Toshiba Silicon NPN Epitaxial Type (PCT process) Original PDF
    2SC2881OTE12L Toshiba 2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SC2881OTE12R Toshiba 2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF
    2SC2881-O-TP Micro Commercial Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - TRANS PREBIAS NPN 120V SOT89 Original PDF
    2SC2881TE12L Toshiba 2SC2881 - TRANSISTOR 800 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signal Original PDF

    2SC2881 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1201

    Abstract: 2SC2881
    Text: Transistors SMD Type Voltage Amplifier Applications 2SC2881 Features High Voltage : VCEO = 120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SA1201 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage


    Original
    PDF 2SC2881 120MHz 2SA1201 100mA 500mA 2SA1201 2SC2881

    2SC2881L

    Abstract: 032 b
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS „ FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201 „ SOT-89 RDERING INFORMATION


    Original
    PDF 2SC2881 120MHz 2SA1201 OT-89 2SC2881L-x-AB3-R 2SC2881G-x-AB3-R OT-89 QW-R204-032 QW-R208-032 2SC2881L 032 b

    2SA1201

    Abstract: 2SC2881
    Text: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original
    PDF 2SC2881 2SA1201 2SA1201 2SC2881

    marking V0 SOT-89

    Abstract: 2SC2881
    Text: MCC TM Micro Commercial Components 2SC2881-O 2SC2881-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information


    Original
    PDF 2SC2881-O 2SC2881-Y OT-89 OT-89 marking V0 SOT-89 2SC2881

    Untitled

    Abstract: No abstract text available
    Text: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original
    PDF 2SC2881 2SA1201

    2SC2881

    Abstract: No abstract text available
    Text: 2SC2881 2SC2881 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 800 mA Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range 3 TJ, Tstg: -55℃ to +150℃


    Original
    PDF 2SC2881 OT-89 100mA 500mA, 500mA 2SC2881

    2SA1201

    Abstract: 2SC2881
    Text: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V · High transition frequency: fT = 120 MHz (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original
    PDF 2SC2881 2SA1201 2SA1201 2SC2881

    2SA1201

    Abstract: 2SC2881
    Text: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original
    PDF 2SC2881 2SA1201 2SA1201 2SC2881

    2SC2881

    Abstract: No abstract text available
    Text: MCC 2SC2881 TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2881-O 2SC2881-Y Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic.


    Original
    PDF 2SC2881 2SC2881-O 2SC2881-Y OT-89 OT-89 250mm 2SC2881

    2SC2881O

    Abstract: 2SC2881
    Text: MCC 2SC2881 TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2881-O 2SC2881-Y Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic. UL Flammability


    Original
    PDF 2SC2881 2SC2881-O 2SC2881-Y OT-89 OT-89 250mm 2SC2881O 2SC2881

    2SC2881

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components 2SC2881-O 2SC2881-Y   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • With SOT-89 package Power amplifier applications x Case Material: Molded Plastic. UL Flammability


    Original
    PDF 2SC2881-O 2SC2881-Y OT-89 OT-89 250mm 2SC2881

    2SA1201

    Abstract: DY TRANSISTOR 2SC2881 PNP TRANSISTOR SOT89
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1201 SOT-89 TRANSISTOR PNP 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


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    PDF OT-89 2SA1201 OT-89 2SC2881 -10mA -120V -100mA -500mA -50mA -500mA 2SA1201 DY TRANSISTOR 2SC2881 PNP TRANSISTOR SOT89

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SC2881 NPN SILICON TRANSISTOR VOLTAGE AMPLIFIER APPLICATIONS POWER AMPLIFIER APPLICATIONS  FEATURES 1 * High voltage: VCEO=120V * High transition frequency: fT=120MHz typ. * Complementary to 2SA1201  SOT-89 ORDERING INFORMATION


    Original
    PDF 2SC2881 120MHz 2SA1201 OT-89 2SC2881G-x-AB3-R QW-R208-032

    Untitled

    Abstract: No abstract text available
    Text: 2SA1201 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 2 — — — 2.6 4.25 2.4 3.75 High voltage High transition frequency Complementary to 2SC2881 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol B 3. EMITTER 3 Features 4.6


    Original
    PDF 2SA1201 OT-89 OT-89 2SC2881 -10mA -120V -100mA -500mA -50mA

    2SA1201

    Abstract: 2SC2881
    Text: 2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2881 Voltage Amplifier Applications Power Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • High transition frequency: fT = 120 MHz (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on ceramic substrate)


    Original
    PDF 2SC2881 2SA1201 2SA1201 2SC2881

    Untitled

    Abstract: No abstract text available
    Text: Reliability Tests Report Product Name: 2SC2881 Package Name: PW-Mini 1. Thermal tests Test Item Heat resistance Reflow Heat resistance (Flow) Heat resistance (Iron) Temperature cycling Test Condition Peak : 260 deg.C(a moment) Reflow zone : 230 deg.C 30 to 50 s


    Original
    PDF 2SC2881

    2SA1201

    Abstract: 2SC2881
    Text: 2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 E C B MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter


    Original
    PDF 2SA1201 OT-89 2SC2881 -500mA -50mA -500mA -100mA 08-May-2007 2SA1201 2SC2881

    Untitled

    Abstract: No abstract text available
    Text: SMD Type Product specification 2SA1201 Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz typ. Small Flat Package Complementary to 2SC2881 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO


    Original
    PDF 2SA1201 -120V 120MHz 2SC2881 -100mA -500mA -50mA

    2SA1201

    Abstract: 2SC2881
    Text: 2SC2881 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC2881 ○ 電力増幅用 ○ 励振段増幅用 単位: mm • 高耐圧です。 • トランジション周波数が高い。 : fT = 120 MHz (標準) • 小型フラットパッケージでハイブリッド IC 組立て用に適します。


    Original
    PDF 2SC2881 2SA1201 SC-62 20070701-JA 2SA1201 2SC2881

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC2881 SOT-89 TRANSISTOR NPN 1. BASE FEATURES Power dissipation 2. COLLECTOR PCM: 500 1 mW (Tamb=25℃) 2 3. EMITTER Collector current ICM: 800 mA Collector-base voltage


    Original
    PDF OT-89 2SC2881 OT-89 100mA 500mA, 500mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1201 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


    Original
    PDF OT-89-3L 2SA1201 OT-89-3L 2SC2881 -10mA -120V -100mA -500mA -50mA -500mA

    Untitled

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 4.6 MAX. FEATURES: 1.7 MAX. . High Voltage J 3 = : V c e q =120V . High Transition Frequency : fT=120MHz . Pc=l ~ 2 W Mounted on Ceramic Substrate . Small Flat Package + CL08 Q45 — Q.05


    OCR Scan
    PDF 2SC2881 120MHz 2SA1201 0L4-Q05 100mA 500mA, 500mA

    2SA1201

    Abstract: 2SC2881
    Text: TOSHIBA 2SC2881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 1.6 M AX — High Voltage : VCEO —120V High Transition Frequency : frp = 120MHz (Typ.) P q = 1~2W (Mounted Ceramic Substrate) Small Flat Package


    OCR Scan
    PDF 2SC2881 120MHz 2SA1201 250mm2 961001EAA2' 2SA1201 2SC2881

    2SA1201

    Abstract: 2SC2881
    Text: TO SH IBA 2SC2881 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2881 Unit in mm POWER AMPLIFIER APPLICATIONS. 1.6 M A X. 4.6 M A X. High Voltage : V0 EO = 12OV High Transition Frequency : frp= 120MHz (Typ.) P q = 1~2W (Mounted Ceramic Substrate)


    OCR Scan
    PDF 2SC2881 120MHz 2SA1201 250mm2 2SA1201 2SC2881