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Rochester Electronics LLC 2SC3070-AE TRANS NPN 25V 1.2A 3-MP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3070-AE	Bulk			1,402	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
	2SC3070-AE	Bulk			1,402	1 - 10 - 100 - 1000 - 10000 $0.21	Buy Now
Rochester Electronics LLC 2SC3071-AE TRANS NPN 100V 0.2A 3-MP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3071-AE	Bulk			1,902	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Toshiba America Electronic Components 2SC3074-O(Q) TRANS NPN 50V 5A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3074-O(Q)	Tube			200	1 - 10 - 100 - 1000 $0.4357 10000 $0.4357	Buy Now
Toshiba America Electronic Components 2SC3074-Y(Q) TRANS NPN 50V 5A PW-MOLD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	2SC3074-Y(Q)	Tube			200	1 - 10 - 100 - 1000 $0.4357 10000 $0.4357	Buy Now
Toshiba America Electronic Components 2SC3074YQ Trans GP BJT NPN 50V 5A 3-Pin(3+Tab) PW-Mold - Bulk (Alt: 2SC3074-Y(Q))
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2SC3074YQ	Bulk			200	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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2SC307 Datasheets (190)

Part	Manufacturer	Description	Datasheet Type	PDF
2SC307	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF
2SC307	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SC307	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC307	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
2SC307	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC307	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC307	Unknown	Cross Reference Datasheet	Scan	PDF
2SC307	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SC307	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF
2SC307	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF
2SC307	Unknown	Transistor Substitution Data Book 1993	Scan	PDF
2SC307	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF
2SC307	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SC307	Unknown	The Japanese Transistor Manual 1981	Scan	PDF

2SC307	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
2SC3070	Sanyo Semiconductor	NPN Epitaxial Planar Silicon Transistor	Original	PDF
2SC3070	Various Russian Datasheets	Transistor	Original	PDF
2SC3070	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF
2SC3070	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF
2SC3070	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF

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2SC307 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C3076 Abstract: 2SC3076 Text: Transistors SMD Type Silicon NPN Epitaxial 2SC3076 TO-252 6.50 +0.2 5.30-0.2 Features +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 Low Collectror Saturation Voltage:VCE sat =0.5V(Max.)(IC=1A) +0.1 0.60-0.1 2.3 +0.15 4.60-0.15 3 .8 0 +0.15	Original	2SC3076 O-252 C3076 C3076 2SC3076	PDF
Untitled Abstract: No abstract text available Text: 2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3072 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain : hFE = 140 to 450 (VCE = 2 V, IC = 0.5 A) : hFE = 70 (min) (VCE = 2 V, IC = 4 A) •	Original	2SC3072	PDF
Untitled Abstract: No abstract text available Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241	PDF
toshiba c3075 Abstract: 2SC3075 C3075 Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 s (max) • High collector breakdown voltage: VCEO = 400 V	Original	2SC3075 toshiba c3075 2SC3075 C3075	PDF
c3074 Abstract: 2SC3074 C3074 y 2SA1244 Text: 2SC3074 シリコンNPNエピタキシャル形 PCT方式東芝トランジスタ 2SC3074 ○ 大電力スイッチング用 • 単位: mm コレクタ飽和電圧が低い。: VCE (sat) = 0.4 V (最大) (IC = 3 A) • スイッチング時間が速い。: tstg = 1.0 s (標準)	Original	2SC3074 2SA1244 20070701-JA c3074 2SC3074 C3074 y 2SA1244	PDF
c3075 Abstract: 2SC3075 Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max) • High collector breakdown voltage: VCEO = 400 V	Original	2SC3075 c3075 2SC3075	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
c3074 Abstract: Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y Text: 2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) · High speed switching time: tstg = 1.0 µs (typ) · Complementary to 2SA1244	Original	2SC3074 2SA1244 c3074 Transistor c3074 Equivalent 2SC3074 2SA1244 2SC3074 C3074 y	PDF
Untitled Abstract: No abstract text available Text: 2SC3076 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240	Original	2SC3076 Freq100M StyleTO-251	PDF
Untitled Abstract: No abstract text available Text: Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing Unit: mm +0.2 2.8 –0.3 M Di ain sc te on na tin nc ue e/ d • Features 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 ● 2.9 –0.05 ● High power gain PG. High transition frequency fT.	Original	2SC3077	PDF
transistor c3076 Abstract: C3076 2SC3076 2SA1241 Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 µs (typ.)	Original	2SC3076 2SA1241 transistor c3076 C3076 2SC3076 2SA1241	PDF
2SC3077 Abstract: No abstract text available Text: Transistor 2SC3077 Silicon NPN planer type For UHF amplification/mixing M Di ain sc te on na tin nc ue e/ d Unit: mm +0.2 2.8 –0.3 0.65±0.15 1.45 0.95 1.5 –0.05 1 0.95 3 +0.1 0.4 –0.05 +0.2 ● High power gain PG. High transition frequency fT. Mini type package, allowing downsizing of the equipment and	Original	2SC3077 2SC3077	PDF
Untitled Abstract: No abstract text available Text: 2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3076 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • Excellent switching time: tstg = 1.0 s (typ.)	Original	2SC3076 2SA1241	PDF
Untitled Abstract: No abstract text available Text: 2SC3075 TOSHIBA Transistor Silicon NPN Triple Diffused Type PCT process 2SC3075 Switching Regulator and High Voltage Switching Applications Unit: mm DC-DC Converter Applications DC-AC Converter Applications • Excellent switching times: tr = 1.0 µs (max)	Original	2SC3075	PDF

Untitled Abstract: No abstract text available Text: 2SC3072 SILICON NPN EPITAXIAL T Y P E STROBO FLASH APPLICATIONS. Unit in iran MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES: . High DC Current Gain: hFE=140-~450 VCE=2V, IC=0.5A hFE=70(Min.) (VcE=2V, Ic =4A) . Low Collector Saturation Voltage : VCE(sat)=1.0V(Max.) (Ic=4A, Ib =0.1A)	OCR Scan	2SC3072 T11RAT10	PDF
J600 transistor Abstract: transistor J600 2SC3070 VEBO-15V Text: Ordering number: EN 923G _ 2SC3070 No.923G NPN Epitaxial Planar Silicon Transistor High hpE> Low-Frequency General-Purpose Amp Applications Applications • Low-frequency, general-purpose amp., various drivers, muting circuit Features • High DC current gain hpE=800 to 3200}	OCR Scan	2SC3070 Ratings/Ta-25Â J600 transistor transistor J600 VEBO-15V	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC3075 TOSHIBA TRANSISTOR ? SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS <; r 3 n i * INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS HIGH SPEED DC-DC CONVERTER APPLICATIONS 6.8MAX. (A ) • i^H 5.2 ±0.2	OCR Scan	2SC3075	PDF
lth7 Abstract: 2SC3079M 2SC4013 Text: ROHM CO LTD 4GE D • 76S6TÌ1 /I ransistors 0005745 7 BRHM 2SC3079M/2SC4013 T-Zl-iS 2SC3079u 2SC4013 y y 3 > h 7 > y ^ 5 isiii^ la Ìiffl/R F Amplifier Epitaxial Planar NPN Silicon Transistors • W f i 't f iill/ D im e n s io n s Unit : mm 1) fT=500M H z Typ. (at 1mA)	OCR Scan	2SC4013 2SC3079M/2SC4013 500MHz 500MHz 2SC3079M lth7 2SC3079M 2SC4013	PDF
2SA1241 Abstract: 2SC3076 30J40 Text: TO SH IBA 2SC3076 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3076 POWER SWITCHING APPLICATIONS • • • Low Collector Saturation Voltage : VCE (sat) = °-5 v (Max.) (Iç; = 1 A) Excellent Switching Time : tstg = 1.0 /us (Typ.)	OCR Scan	2SC3076 2SA1241 2SA1241 2SC3076 30J40	PDF
2SC3072 Abstract: No abstract text available Text: TO SH IBA 2SC3072 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 Unit in mm STROBE FLASH APPLICATIONS (A) MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., 5 .2 1 0 .2 r- • • • I 'l P in 0.6M AX. - t f - High DC Current Gain : hpE = 140~450	OCR Scan	2SC3072 2SC3072	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC3075 TOSHIBA TRANSISTOR i SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS < ; r n 3 i * INDUSTRIAL APPLICATIONS Unit in mm SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. w jiixceuenL o w n c n in g n m e s	OCR Scan	2SC3075	PDF
Untitled Abstract: No abstract text available Text: T O SH IB A 2SC3072 TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3072 MEDIUM POWER AMPLIFIER APPLICATIONS. • High DC Current Gain : hpE —140~450 (Vç e = 2V, I ç = 0.5A) h p E -7 0 (Min.) (Vç e = 2V, I ç = 4A)	OCR Scan	2SC3072	PDF
2SC3071 Abstract: 3CS5 946G Text: Ordering number: EN 946G 2SC3071 No.946G NPN Epitaxial Planar Silicon Transistor High hpE, Low-Frequency General-Purpose Amp Applications A pplications •Low-frequency general-purpose amplifiers, various drivers, muting circuits. F e a tu re s • High DC current gain hpE = 500 to 2000 .	OCR Scan	2SC3071 3CS5 946G	PDF
2SC3077 Abstract: JT MARKING marking AIJ I Text: 2SC3077 2SC3077 '> V =1 V NPN y l— -tm /Si NPN Planar U H F igig, îS ê f f l/U H F Amplifier, Mixer • 1$ ^ /F e a tu r e s • PG ^ ^ 0/ H i g h PG . >Wfcik U ¿ ^ ' o / H i g h fT • >3 £Z>êMm A ^ -n T tL ; MINI Type package suitable for small equipment, tape and	OCR Scan	2SC3077 S059A Ik--10 VCB-10 2SC3077 JT MARKING marking AIJ I	PDF

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2SC307 Search Results

2SC307 Price and Stock

Rochester Electronics LLC 2SC3070-AE

Rochester Electronics LLC 2SC3071-AE

Toshiba America Electronic Components 2SC3074-O(Q)

Toshiba America Electronic Components 2SC3074-Y(Q)

Toshiba America Electronic Components 2SC3074YQ

2SC307 Datasheets (190)

2SC307 Datasheets Context Search

C3076

Untitled

Untitled

toshiba c3075

c3074

c3075

sn76131

c3074

Untitled

Untitled

transistor c3076

2SC3077

Untitled

Untitled

Untitled

J600 transistor

Untitled

lth7

2SA1241

2SC3072

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2SC3071

2SC3077