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    2SC3190 TRANSISTOR Search Results

    2SC3190 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC3190 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC3190

    Abstract: 2SC3190 transistor 2SC319
    Text: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SC3190 30MHz 2SC3190 2SC3190 transistor 2SC319

    2SC3190

    Abstract: low noise amplifier at 30MHz to
    Text: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SC3190 30MHz 2SC3190 low noise amplifier at 30MHz to

    2SC3190

    Abstract: 2SC3190 transistor
    Text: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SC3190 30MHz 2SC3190 2SC3190 transistor

    2sc319* transistor

    Abstract: 2SC3190
    Text: ST 2SC3190 NPN Silicon Epitaxial Planar Transistor High frequency low noise amplifier application HF band amplifier application The transistor is subdivided into three groups R, O and Y, according to its DC current gain On special request, these transistors can be


    Original     		PDF 2SC3190 30MHz 2sc319* transistor 2SC3190

    Untitled

    Abstract: No abstract text available
    Text: 2SC3190 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)100m# Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V)400m @I(C) (A) (Test Condition)10m


    Original     		PDF 2SC3190 Freq80M

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2SC144

    Abstract: 2SD466 2sc5266
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    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266