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    2SC3199 TRANSISTOR Search Results

    2SC3199 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2SC3199 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1267

    Abstract: No abstract text available
    Text: 2SA1267 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SC3199 * Collector-Emitter Voltage VCEO=-50V ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic


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    PDF 2SA1267 O-92S 2SC3199 -100uA -100mA -10mA 2SA1267

    2sa1267

    Abstract: No abstract text available
    Text: 2SC3199 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: TO-92S * Complement to 2SA1267 * Collector Current Ic=150 mA ABSOLUTE MAXIMUM RATINGS at Tamb=250C Characteristic


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    PDF 2SC3199 O-92S 2SA1267 100uA 100mA 10Kohm 2sa1267

    2SC3199

    Abstract: 2SC3199 equivalent 2sC3199 transistor
    Text: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3199 100mA, 2SC3199 2SC3199 equivalent 2sC3199 transistor

    2SC3199

    Abstract: 2sC3199 transistor 2SC319 2sc319* transistor 2SC3199 equivalent
    Text: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3199 100mA, 2SC3199 2sC3199 transistor 2SC319 2sc319* transistor 2SC3199 equivalent

    2SC3199

    Abstract: 2sC3199 transistor 2SC3199 equivalent
    Text: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3199 100mA, 2SC3199 2sC3199 transistor 2SC3199 equivalent

    2SC3199GR

    Abstract: No abstract text available
    Text: 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    TO-92S High Current Capability High DC Current Gain Small Package REF. A B C


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    PDF 2SC3199 O-92S 2SC3199-O 2SC3199-Y 2SC3199-GR 31-Jul-2012 2SC3199GR

    2SC3199

    Abstract: 2sc319* transistor 2SC3199GR 2sC3199 transistor
    Text: 2SC3199 0.15 A , 50 V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES    TO-92S High Current Capability High DC Current Gain Small Package REF. A B C


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    PDF 2SC3199 O-92S 2SC3199-O 2SC3199-Y 2SC3199-GR 22-Aug-2013 2SC3199 2sc319* transistor 2SC3199GR 2sC3199 transistor

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC3199 TRANSISTOR NPN 1. EMITTER FEATURES z High Current Capability z High DC Current Gain z Small Package 2. COLLECTOR 3. BASE APPLICATIONS z Audio Amplifier Applications


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    PDF 2SC3199 100mA

    2sC3199 transistor

    Abstract: 2SC3199 2SC3199 equivalent
    Text: ST 2SC3199 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    PDF 2SC3199 100mA, 2sC3199 transistor 2SC3199 2SC3199 equivalent

    XL1225 equivalent

    Abstract: 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent
    Text: Transistors, SCR, IC CROSS REFERENCE / EQUIVALENT TABLE R Cross Reference Table 1 / 13 INDUSTRY TYPE No. DC COMP. TYPE No. Cross Reference Table 2 / 13 PACKAGE INDUSTRY TYPE No. DC COMP. TYPE No. PACKAGE 2N2955 2N2955 TO-3 2SA952 2SA952 TO-92 2N3055 2N3055


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    PDF 2N2955 2SA952 2N3055 2SB1426 2N3417 XL1225 equivalent 2N3053 equivalent BF422 EQUIVALENT bc238 equivalent 2N6397 equivalent 2N5551 equivalent 2SB772 equivalent BC109 BC184 BC549 2sd880 equivalent BT169 equivalent

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    PDF 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


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    PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


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    PDF 100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717

    2SC3197

    Abstract: 2SC3198G 2SC2458BL 2SC2274D 2SC2274E 2SC2274F 2SC2274K 2SC2309 2SC2309D 2SC2309E
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics i Ta=25”C, Unless Otherai se Spec tied) Maximum Ratings Type No. 2SC2274D ^CBO ^CEO EBO (V) Min (V) Min V) Win 100 80 5 I c Po (W) A) È TC=25"C 0.6 CBO ^CB CES V CE HA) 0 (V ) pA) (V)


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    PDF 2SC2274D O-92-1 2SC2274E 2SC2274F 2SC2274K O-92- 2SC3198 2SC3197 2SC3198G 2SC2458BL 2SC2309 2SC2309D 2SC2309E

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2SC2274D VCBO ^CEO (V) (V) Min Min 100 80 Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^EBO (V) Min 5 (W) 'c (A) 0TC=25°C 0.6 0.5 hFE 'cBO 'ces V CE (HA) 9 (V) GiA) 0 (V)


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    PDF 2SC2274D 2SC2274K O-92-1 2SC3198Y 2SC31980 2SC3198GÃ 2SC3198BL

    2sc245b

    Abstract: 2SC3197 2sc3114 2sc3199 2SC3198-BL 2SC3198 2SC2274D 2SC2274E 2SC2274F 2SC2274K
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309


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    PDF 2SC2274D 2SC2274E 2SC2274F 2SC2274K 2SC2309 2SC2309D 2SC2309E 2SC2309F 2SC2458 2SC245BBL 2sc245b 2SC3197 2sc3114 2sc3199 2SC3198-BL 2SC3198 2SC2274D 2SC2274E 2SC2274F 2SC2274K

    transistor A1267

    Abstract: A1267 a1267* transistor transistor a1267 gr c 3199 y 2SA3199 2SA1267 2SC3199 A1267 transistor TRANSISTOR 2SC Audio Amplifier Applications
    Text: o 2SC 3199 2SC 3 19 9 SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS U nii in mm c V A P P L IC A T A IO N S 4.2MAX. T i Audio A mp lif ie r Appl icat ions, ÏTÏ AM Ampli fi er Appl icati ons. 0.55MAX. C I i ! FEATU R ES 0.4 • High C u r r e n t Ca pa bi l i ty I I c“ 150mA (Max. ).


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    PDF 2SC3199 55MAX. 150mA 2SA3199© 2SC3199© 100mA, transistor A1267 A1267 a1267* transistor transistor a1267 gr c 3199 y 2SA3199 2SA1267 A1267 transistor TRANSISTOR 2SC Audio Amplifier Applications

    2SC3197

    Abstract: 2sc245b 2SC3198Y 2SC3198 2SC2309 2SC2458Y 2sc3114 2SC2274D 2SC2274E 2SC2274F
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) Type No. c A) CBO ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min 2SC2274D 100 80 5 0.6 .5 1 2SC2274E 100 80 5 0.6 .5 2SC2274F 100 80 5 0.6 2SC2274K 100 80 5 2SC2309


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    PDF 2SC2274D 2SC2274E 2SC2274F 2SC2274K 2SC2309 2SC2309D 2SC2309E 2SC2309F 2SC2458 2SC245BBL 2SC3197 2sc245b 2SC3198Y 2SC3198 2SC2309 2SC2458Y 2sc3114 2SC2274D 2SC2274E 2SC2274F

    2SC4370A

    Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
    Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)


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    PDF 2SC387SS 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2SC4370A 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 bc557 2SA1504 BC337/BC327 2SC3202

    2SC3875S

    Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
    Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200


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    PDF Ta-25 2SC3875S 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 BC547 BC546 2Sc4370a 2SC3227 2sa1274 BC557 bc556 2sa1659a bc557

    2Sc4370a

    Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


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    PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2Sc4370a 2SC3227 BC548 ,BC558 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202

    2sc3227

    Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


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    PDF 2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2sc3227 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 KTC9014

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


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    PDF 2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288